FDC5661N-F085

DATA SHEET www.onsemi.com MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 4 A, 60 mW D D S FDC5661N-F085 Pin 1 Features • • • • • • • G MARKING DIAGRAM XXX MG G 1 XXX M G Applications • DC–DC Converter • Motor Drives = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V ID 4.3 A Drain Current Continuous (VGS = 10 V) D TSOT23−6 CASE 419BL RDS(on) = 47 mW at VGS = 10 V, ID = 4.3 A RDS(on) = 60 mW at VGS = 4.5 V, ID = 4 A Typ Qg(TOT) = 14.5 nC at VGS = 10 V Low Miller Charge UIS Capability AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Rating D Pulsed 20 1 6 2 5 3 4 Single Pulse Avalanche Energy (Note 1) EAS 81 mJ Power Dissipation PD 1.6 W ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Operating and Storage Temperature TJ, TSTG −55 to +150 °C Thermal Resistance Junction to Case RqJC 30 °C/W Thermal Resistance Junction to Ambient TO−263, 1in2 Copper Pad Area RqJA 78 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 81 mJ is 100% test at L = 14 mH, IAS = 3.4 A, Starting TJ = 25°C © Semiconductor Components Industries, LLC, 2015 September, 2022 − Rev. 4 1 Publication Order Number: FDC5661N−F085/D FDC5661N−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit BVDSS ID = 250 mA, VGS = 0 V 60 − − V − − 1 mA − − 250 OFF CHARACTERISTICS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V TA = 150°C Gate to Source Leakage Current IGSS VGS = ±20 V − − ±100 nA Gate to Source Threshold Voltage VGS(th) VGS = VDS, ID = 250 mA 1 2.0 3 V Drain to Source On−Resistance RDS(on) VGS = 10 V, ID = 4.3 A − 38 47 mW VGS = 4.5 V, ID = 4 A − 46 60 − 69 86 − 763 − pF − 68 − pF − 36 − pF ON CHARACTERISTICS VGS = 10 V, ID = 4.3 A TJ = 150°C DYNAMIC CHARACTERISTICS VGS = 0 V, VDS = 25 V, f = 1 MHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance RG f = 1 MHz − 2.6 − W Qg(TOT) VGS = 0 to 10 V, VDD = 30 V, ID = 4.3 A − 14.5 19 nC Gate to Source Gate Charge Qgs VDD = 30 V, ID = 4.3 A − 2.4 − nC Gate to Drain “Miller” Charge Qgd − 2.9 − nC − − 17.6 ns − 7.2 − ns tr − 1.6 − ns td(off) − 19.3 − ns tf − 3.1 − ns toff − − 36 ns ISD = 4.3 A − 0.8 1.25 V ISD = 2.1 A − 0.8 1.0 ISD = 4.3 A, dISD/dt = 100 A/ms − 18.4 24 ns − 10.0 13 nC Total Gate Charge at 10 V SWITCHING CHARACTERISTICS Turn−On Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−Off Time ton td(on) VGS = 10 V, VDD = 30 V, ID = 4.3 A, RGS = 6 W, DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDC5661N−F085 TYPICAL CHARACTERISTICS 5 ID, Drain Current (A) 1.0 0.8 0.6 0.4 4 VGS = 10 V 3 VGS = 4.5 V 2 1 0.2 RqJA = 78 °C/W 0.0 0 25 50 75 100 125 0 150 25 50 Figure 1. Normalized Power Dissipation vs. Ambient Temperature ZqJA, Normalized Thermal Impedance 2 1 0.1 75 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE RqJA = 78°C/W 10−2 125 10−1 100 102 101 103 t, Rectangular Pulse Duration (s) Figure 3. Normalized Maximum Transient Thermal Impedance 100 VGS = 10 V TC = 25°C FOR TEMPERATURES ABOUT 25°C DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 ƪǸ ƫ 150 * T C 125 SINGLE PULSE RqJA = 78°C/W 1 10−3 10−2 150 Figure 2. Maximum Continuous Drain Current vs. Ambient Temperature DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.01 10−3 100 TA, Ambient Temperature (5C) TA, Ambient Temperature (5C) IDM, Peak Current (A) Power Dissipation Multiplier 1.2 10−1 100 101 t, Rectangular Pulse Duration (s) Figure 4. Peak Current Capability www.onsemi.com 3 102 103 FDC5661N−F085 TYPICAL CHARACTERISTICS (continued) 20 10 ms 10 ID, Drain Current (A) ID, Drain Current (A) 100 100 ms 1 1 ms 10 ms 0.1 OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY rDS(on) TA = 25°C 0.01 0.01 0.1 1 10 100 ms 1s DC PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 16 VDD = 5 V 12 TJ = 150°C 8 4 0 100 300 0 1 RDS(on), Drain to Source On−Resistance (mW) ID, Drain Current (A) 120 VGS = 10 V VGS = 6 V PULSE DURATION = 80 ms VGS = 5 V DUTY CYCLE = 0.5% MAX VGS = 4.5 V 12 VGS = 3.5 V VGS = 4 V 3 8 4 0 1 2 90 TJ = 150°C 60 TJ = 25°C 30 4 3 2 4 Normalized Drain to Source On−Resistance PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 ID = 4.3 A VGS = 10 V 0.8 0.6 −80 −40 0 40 80 10 8 Figure 8. Drain to Source On−Resistance Variation vs. Gate to Source Voltage Normalized Gate Threshold Voltage Figure 7. Saturation Characteristics 1.8 6 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 2.0 5 ID = 4.3 A PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = 3 V 0 4 Figure 6. Transfer Characteristics Figure 5. Forward Bias Safe Operating Area 16 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 20 TJ = −55°C TJ = 25°C 120 160 1.2 ID = 250 mA VGS = VDS 1.1 1.0 0.9 0.8 0.7 0.6 −80 −40 0 40 80 120 160 TJ, Junction Temperature (5C) TJ, Junction Temperature (5C) Figure 10. Normalized Gate Threshold Voltage vs. Junction Temperature Figure 9. Normalized Drain to Source On Resistance vs. Junction Temperature www.onsemi.com 4 FDC5661N−F085 TYPICAL CHARACTERISTICS (continued) 2000 ID = 250 mA 1.10 1.05 1.00 −40 0 40 80 120 Crss 10 160 Coss 100 0.95 0.90 −80 Ciss 1000 Capacitance (pF) Normalized Drain to Source Breakdown Voltage 1.15 f = 1 MHz VGS = 0 V 0.1 1 TJ, Junction Temperature (5C) VGS, Gate to Source Voltage (V) 50 VDS, Drain To Source Voltage (V) Figure 12. Capacitance vs. Drain to Source Voltage Figure 11. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10 10 ID = 4.3 A 8 6 VDD = 20 V VDD = 30 V VDD = 40 V 4 2 0 3 0 6 9 12 15 QG, Gate Charge (nC) Figure 13. Gate Charge vs. Gate to Source Voltage ORDERING INFORMATION Device Marking Device Package Shipping† .661N FDC5661N−F085 TSOT23−6 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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