FDC606P

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC606P FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses ON Semiconductor’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V. Applications RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.8 V • Fast switching speed • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch • Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current –6 A PD Maximum Power Dissipation – Continuous (Note 1a) – Pulsed TJ, TSTG –20 (Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .606 FDC606P 7’’ 8mm 3000 units 2001 Semiconductor Components Industries, LLC. September-2017, Rev. 5 Publication Order Number: FDC606P/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = –250 µA –12 Typ Max Units Off Characteristics V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –10 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA ID = –250 µA On Characteristics –3 mV/°C µA (Note 2) –0.4 –0.5 VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 2.5 21 26 34 28 –1.5 V mV/°C 26 35 53 35 ID(on) On–State Drain Current VGS = –4.5 V, ID = –6 A VGS = –2.5 V, ID = –5 A VGS = –1.8 V, ID = –4 A VGS = –4.5 V, ID = –6 A,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –6 A 25 VDS = –6 V, f = 1.0 MHz V GS = 0 V, 1699 pF 679 pF 423 pF –20 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 11 19 10 20 ns Turn–Off Delay Time 89 142 ns tf Turn–Off Fall Time 70 112 ns Qg Total Gate Charge 18 25 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, VDS = –6 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –6 A, ns 3 nC 4.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.6 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 2 78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDC606P Electrical Characteristics FDC606P Typical Characteristics 2.6 -2.5V VGS = -4.5V -1.8V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) -3.0V 15 10 -1.5V 5 2.4 VGS=-1.5V 2.2 2 1.8 -1.8V 1.6 -2.0V 1.4 -2.5V 1.2 -3.0V 1 -4.5V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 20 0.08 ID = -6A VGS = -4.5V ID = -3A 1.2 1.1 1 0.9 0.8 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) -IS, REVERSE DRAIN CURRENT (A) 125 C 15 10 5 0 0.75 1 1.25 1.5 5 100 25oC TA = -55oC o 0.5 4 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 VDS = -5V 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. -ID, DRAIN CURRENT (A) 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 10 -ID, DRAIN CURRENT (A) 1.75 2 VGS = 0V 10 25oC 0.1 -55oC 0.01 0.001 0.0001 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. TA = 125oC 1 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDC606P Typical Characteristics 2500 VDS = -4V ID = -6A f = 1 MHz VGS = 0 V -6V 4 CISS 2000 -8V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 1500 COSS 1000 CRSS 500 0 0 5 10 15 20 0 25 0 3 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 12 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 9 Figure 8. Capacitance Characteristics. 100 100µs 10 1ms 10ms 100ms 1s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 156oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 100 0.1 1 10 100 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 RθJA = 156 C/W 0.1 o 0.1 P(pk) 0.05 t1 0.02 0.01 0.001 0.00001 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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