FDC6305N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • Applications • Load switch • DC/DC converter • Motor driving 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V • Low gate charge (3.5nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). D2 S1 4 3 5 2 6 1 D1 G2 SuperSOT TM -6 S2 G1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V ID Drain Current (Note 1a) ±8 2.7 PD Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b) 0.9 - Continuous - Pulsed 8 (Note 1c) TJ, Tstg A Operating and Storage Junction Temperature Range W 0.7 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 130 Thermal Resistance, Junction-to-Case (Note 1) 60 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .305 FDC6305N 7’’ 8mm 3000 units 1999 Fairchild Semiconductor Corporation FDC6305N, Rev. C FDC6305N March 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA 1.5 V On Characteristics 20 V 1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C -2.7 0.060 0.095 0.085 ∆TJ RDS(on) mV/°C 14 0.4 ID(on) On-State Drain Current VGS = 4.5, ID = 2.7 A VGS = 4.5 ID = 2.7 A, TJ = 125°C VGS = 2.5 V, ID = 2.2 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 2.7 A 0.9 mV/°C 0.080 0.128 0.120 6 Ω A 8 S 310 pF Dynamic Characteristics VDS = 10 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 80 pF 40 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 15 8.5 17 ns Turn-Off Delay Time 11 20 ns tf Turn-Off Fall Time 3 10 ns Qg Total Gate Charge 3.5 5 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, ID = 2.7 A, VGS = 4.5 V ns 0.55 nC 0.95 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A (Note 2) 0.77 0.8 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally. a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 °C/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC6305N, Rev. C FDC6305N Electrical Characteristics FDC6305N Typical Characteristics 10 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 3.5V ID, DRAIN CURRENT (A) 8 2.5V 6 2.0V 4 2 1.5V 0 1.4 VGS = 2.5V 3.0V 1.2 3.5V 4.0V 4.5V 1 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 1.6 ID = 2.7A VGS = 4.5V ID = 1.4A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.2 0.16 0.12 TA = 125oC 0.08 TA = 25oC 0.04 0 150 1 2 3 4 5 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. TA = -55oC VDS = 5V 10 ID, DRAIN CURRENT (A) o 125 C 8 VGS = 0V o 25 C IS, REVERSE DRAIN CURRENT (A) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 4 2 1 o TA = 125 C 0.1 o 25 C o -55 C 0.01 0.001 0.0001 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6305N, Rev. C (continued) 5 500 ID = 2.7A f = 1MHz VGS = 0 V VDS = 5V 4 400 10V 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDC6305N Typical Characteristics 3 2 CISS 300 200 1 100 0 0 COSS CRSS 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 Qg, GATE CHARGE (nC) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 5 10 RDS(ON) LIMIT 100µs SINGLE PULSE o RθJA = 180 C/W 4 o TA = 25 C 10ms 1 POWER (W) 100ms 1s DC VGS = 4.5V SINGLE PULSE o RθJA = 180 C/W 0.1 3 2 1 o TA = 25 C 0 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 1ms 0.5 D = 0.5 0.2 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA = 180°C/W 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.0001 0.02 0.01 Single Pulse 0.001 t2 TJ - TA = P * R θJA (t) 0.01 0.1 t1 , TIME (sec) 1 Duty Cycle, D = t 1 / t 2 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDC6305N, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com