FDC6323L

DATA SHEET www.onsemi.com Integrated Load Switch FDC6323L TSOT−23−6 CASE 419BL Description These Integrated Load Switches are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These devices are particularly suited for low voltage high side load switch application where low conduction loss and ease of driving are needed. Features • • • • • • VDROP = 0.2 V @ VIN = 5 V, IL = 1 A, VON/OFF = 1.5 V to 8 V VDROP = 0.3 V @ VIN = 3.3 V, IL = 1 A, VON/OFF = 1.5 V to 8 V High Density Cell Design for Extremely Low On−Resistance VON/OFF Zener Protection for ESD Ruggedness > 6 kV Human Body Model SUPERSOTt−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities This is a Pb−Free and Halide Free Device VIN,R1 4 3 VOUT, C1 2 VOUT, C1 1 R1 MARKING DIAGRAM &E&Y &.323&G &E &Y &. 323 &G = Designates Space = Binary Calendar Year Coding Scheme = Pin One Dot = Specific Device Code = Date Code ORDERING INFORMATION Device FDC6323L Package Shipping† TSOT−23−6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Q2 ON/OFF 5 Q1 R1, C1 6 See Application Circuit Figure 1. + IN VDROP − OUT ON/OFF Figure 2. Equivalent Circuit © Semiconductor Components Industries, LLC, 1999 September, 2021 − Rev. 7 1 Publication Order Number: FDC6323L/D FDC6323L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol VIN VON/OFF IL PD TJ, TSTG ESD Input Voltage Range On/Off Voltage Range Value Unit 3−8 V 1.5−8 V Load Current @ VDROP = 0.5V − Continuous (Note 1) 1.5 A Load Current @ VDROP = 0.5V − Pulsed (Note 1, Note 3) 2.5 Maximum Power Dissipation (Note 2a) 0.7 W −55 to 150 °C 6 kV Operating and Storage Temperature Range Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF / 1500 W) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 2a) 180 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 2) 60 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS IFL Forward Leakage Current VIN = 8 V, VON/OFF = 0 V − − 1 mA IRL Reverse Leakage Current VIN = −8 V, VON/OFF = 0 V − − −1 mA 3 − 8 V ON CHARACTERISTICS (Note 3) VIN VON/OFF VDROP IL Input Voltage On/Off Voltage Conduction Voltage Drop @ 1 A Load Current 1.5 − 8 V VIN = 5 V, VON/OFF = 3.3 V − 0.145 0.2 V VIN = 3.3 V, VON/OFF = 3.3 V − 0.178 0.3 VDROP = 0.2 V, VIN = 5 V, VON/OFF = 3.3 V 1 − − VDROP = 0.3 V, VIN = 3.3 V, VON/OFF = 3.3 V 1 − − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. VIN = 8 V, VON/OFF = 8 V, VDROP = 0.5 V, TA = 25°C 2. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. TJ * TA PD(t) + TJ * TA + + I 2D(t) RDS(ON)@TJ RqJA(t) RqJC ) RqCA(t) Typical RqCA for single device operation using the board layouts shown below on FR−4 PCB in a still air environment: a) 180°C/W when mounted on a 2oz minimum copper pad. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 FDC6323L TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 0.5 0.5 TJ = 125°C 0.4 TJ = 125°C 0.4 0.3 VDROP (V) VDROP (V) TJ = 25°C TJ = 25°C 0.2 VIN = 5 V VON/OFF = 1.5−8 V PW = 300 ms, D ≤ 2% 0.1 0.3 0.2 VIN = 3.3 V VON/OFF = 1.5−8 V PW = 300 ms, D ≤ 2% 0.1 0 0 0 1 2 3 4 0 1 2 IL (A) Figure 4. VDROP Versus IL at VIN = 3.3 V 1.0 IL = 1 A VIN = 3.3 V PW = 300 ms, D ≤ 2% 0.35 R(ON), (W) 0.8 VDROP (V) 0.4 IL = 1 A VON/OFF = 1.5−8 V PW = 300 ms, D ≤ 2% 0.6 0.4 0.3 TJ = 125°C 0.25 0.2 TJ = 125°C 0.2 TJ = 25°C 0.15 0 1 2 3 4 0.1 5 0 VIN (V) IL = 1 A VON/OFF = 1.5−8 V PW = 300 ms, D ≤ 2% R(ON), (W) 0.6 0.4 TJ = 125°C 0 TJ = 25°C 1 2 3 2 3 4 Figure 6. R(ON) Versus IL at VIN = 3.3 V 1 0.8 1 IL, (A) Figure 5. VDROP Versus VIN at IL = 1 A 0.2 4 IL (A) Figure 3. VDROP Versus IL at VIN = 5 V TJ = 25°C 3 4 5 VIN, (V) Figure 7. On Resistance Variation with Input Voltage www.onsemi.com 3 5 FDC6323L TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) 50 50 VIN = 3.3 V IL = 1 A VON/OFF = 3.3 V R1 = 20 kW Ci = 10 mF Co = 1 mF td(off) 40 30 tf VIN = 5 V IL = 1 A VON/OFF = 3.3 V R1 = 20 kW Ci = 10 mF Co = 1 mF 20 10 0 Time (ms) Time (ms) 40 0 2 tr td(off) 30 tf 20 tr 10 td(on) td(on) 4 8 6 0 10 0 2 4 R2 (kW) Figure 8. Switching Variation with R2 at VIN = 5 V and R1 = 20 kW Time (ms) 250 VIN = 2.5 V IL = 1 A VON/OFF = 3.3 V R1 = 20 kW Ci = 10 mF Co = 1 mF 40 30 tr 20 tf td(off) 10 td(on) IL = 1 A VON/OFF = 3.3 V R1 = 20 kW Ci = 10 mF Co = 1 mF 200 VIN = 5 V 150 100 3.3 V 50 2.5 V 0 0 0 2 4 6 8 10 0 2 4 Figure 10. Switching Variation with R2 at VIN = 2.5 V and R1 = 20 kW 500 IL = 1 A VON/OFF = 3.3 V R1 = 20 kW Ci = 10 mF Co = 1 mF 400 300 6 8 10 R2 (kW) R2 (kW) VDROP (mV) 10 8 Figure 9. Switching Variation with R2 at VIN = 3.3 V and R1 = 20 kW % of Current Overshoot 50 6 R2 (kW) Figure 11. % of Current Overshoot Variation with VIN and R2 toff ton tr td(on) VIN = 2.5 V td(off) tf 90% 90% 3.3 V VOUT 5V 200 10% 10% Inverted 90% 100 VIN 10% 0 0 20 40 60 80 50% 50% Pulse Width 100 R2 (kW) Figure 12. VDROP Variation with VIN and R2 Figure 13. Switching Waveforms www.onsemi.com 4 FDC6323L TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) 10 100 ms R(ON) Limit IL, Drain Current (A) 3 1 ms 10 ms 1 100 ms 0.3 DC 0.1 0.03 0.01 0.1 1s VIN = 5 V Single Pulse RqJA = See Note 2a TA = 25°C 0.2 0.5 1 5 2 10 20 30 VDROP (V) Figure 14. Safe Operating Area r(t), Normalized Effective Transient Thermal Resistance 1 0.5 0.2 0.1 0.05 D = 0.5 0.2 RqJA (t) = r(t) * RqJA RqJA = See Note 2a 0.1 0.05 P(pk) t1 0.02 0.02 0.01 t2 0.01 0.005 0.00001 TJ − TA = P * RqJA (t) Duty Cycle, D = t1/t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 t1, Time (s) Figure 15. Transient Thermal Response Curve NOTE: Thermal characterization performed on the conditions described in Note 2a. Transient thermal response will change depends on the circuit board design. www.onsemi.com 5 100 300 FDC6323L LOAD SWITCH APPLICATION General Description This device is particularly suited for compact computer peripheral switching applications where 8 V input and 1 A output current capability are needed. This load switch integrates a small N−Channel Power MOSFET (Q1) which drives a large P−Channel Power MOSFET (Q2) in one tiny SUPERSOT−6 package. A load switch is usually configured for high side switching so that the load can be isolated from the active power source. A P−Channel Power MOSFET, because it does not require its drive voltage above the input voltage, is usually more cost effective than using an N−Channel device in this particular application. A large P−Channel Power MOSFET minimizes voltage drop. By using a small N−Channel device the driving stage is simplified. Q2 IN OUT C1 R1 Q1 ON/OFF Co LOAD R2 Figure 16. Application Circuit Component Values • R1: Typical 10k−1 MW • R2: Typical 0−100 kW (optional) • C1: Typical 1000 pF (optional) Design Notes • • • • R1 is needed to turn off Q2. R2 can be used to soft start the switch in case the output capacitance Co is small. R2 should be at least 10 times smaller than R1 to guarantee Q1 turns on. By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by the equitation: IBIAS_LOSS + VIN R1 ) R2 when the switch is ON. IBIAS_LOSS can be minimized by selecting a large value for R1. • R2 and CRSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on, additional capacitance C1 can be added externally to slow down the turn on. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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