Integrated Load Switch
FDC6326L
Description
This device is particularly suited for compact power management
in portable electronic equipment where 3 V to 20 V input and 1.8 A
output current capability are needed. This load switch integrates
a small N−Channel power MOSFET (Q1) which drives a large
P−Channel power MOSFET (Q2) in one tiny SUPERSOTTM−6
package.
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Features
• VDROP = 0.20 V @ VIN = 12 V, IL = 1.5 A, RDS(on) = 0.125 W
• VDROP = 0.20 V @ VIN = 5 V, IL = 1 A, RDS(on) = 0.20 W
• SUPERSOT−6 Package Design Using Copper Lead Frame for
TSOT−23−6
CASE 419BL
Superior Thermal and Electrical Capabilities
MARKING DIAGRAM
• This is a Pb−Free and Halide Free Device
VIN,R1
4
ON/OFF
5
3
VOUT, C1
2
VOUT, C1
1
R2
&E&Y
&.326&G
Q2
&E
&Y
&.
326
&G
Q1
R1, C1
6
= Designates Space
= Binary Calendar Year Coding Scheme
= Pin One Dot
= Specific Device Code
= Date Code
ORDERING INFORMATION
See Application Circuit (Figure 3)
Device
Figure 1.
+
IN
VDROP
−
FDC6326L
Package
Shipping†
TSOT−23−6
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
OUT
ON/OFF
Figure 2. Equivalent Circuit
© Semiconductor Components Industries, LLC, 1998
June, 2021 − Rev. 5
1
Publication Order Number:
FDC6326L/D
FDC6326L
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Parameter
Value
Unit
Input Voltage Range
3−20
V
On/Off Voltage Range
2.5−8
V
1.8
A
Symbol
VIN
VON/OFF
IL
Load Current − Continuous (Note 1)
Load Current − Pulsed (Note 1, Note 3)
PD
TJ, TSTG
ESD
5
Maximum Power Dissipation (Note 2)
Operating and Storage Temperature Range
0.7
W
−55 to 150
°C
6
kV
Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF/1500 W)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted
Parameter
Symbol
Value
Unit
RqJA
Thermal Resistance, Junction−to−Ambient (Note 2)
180
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 2)
60
°C/W
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VIN = 20 V, VON/OFF = 0 V
−
−
1
mA
VIN = 12 V, VON/OFF = 3.3 V, IL = 1.5 A
−
0.15
0.2
V
VIN = 5 V, VON/OFF = 3.3 V, IL = 1 A
−
0.14
0.2
VGS = −12 V, ID = −1.9 A
−
0.095
0.125
VGS = −5 V, ID = −1.5 A
−
0.14
0.2
VDROP = 0.125 V, VIN = 12 V, VON/OFF = 3.3 V
1
−
−
VDROP = 0.20 V, VIN = 5 V, VON/OFF = 3.3 V
1
−
−
OFF CHARACTERISTICS
IFL
Forward Leakage Current
ON CHARACTERISTICS (Note 3)
VDROP
RDS(on)
IL
Conduction Voltage Drop
Q2 − Static On−Resistance
Load Current
W
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. VIN = 20 V, VON/OFF = 8 V, TA = 25°C
2. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDC6326L
Q2
IN
OUT
C1
R1
ON/OFF
Ci
Q1
Load
Co
R2
Figure 3. FDC6326L Load Switch Application
External Component Recommendation:
First select R2, 100−1 kW, for Slew Rate control.
C1 ≤ 1000 pF can be added in addition to R2 for further In−rush current control.
Then select R1 such that R1/R2 ratio maintains between 10−100. R1 is required to turn Q2 off.
For SPICE simulation, users can download a ″FDC6326L.MOD″ Spice model from ON Semiconductor Web Site at www.onsemi.com
TYPICAL CHARACTERISTICS
0.5
0.5
0.4
TA = 125°C
VDROP (V)
VDROP (V)
0.4
0.3
TA = 25°C
0.2
VIN = 12 V
VON/OFF = 1.5−8 V
PW = 300 ms, D ≤ 2%
0.1
0
0
1
2
3
TA = 125°C
0.3
0.2
VIN = 5 V
VON/OFF = 1.5−8 V
PW = 300 ms, D ≤ 2%
0.1
0
4
0
Figure 4. Conduction Voltage Drop
Variation with Load Current
IL = 1 A
VON/OFF = 1.5−8 V
PW = 300 ms, D ≤ 2%
VDROP (V) / RON (W)
0.4
0.3
TA = 125°C
0.2
TA = 25°C
0
2
4
6
2
3
Figure 5. Conduction Voltage Drop Variation
with Load Current
0.6
0.1
1
IL (A)
IL (A)
0.5
TA = 25°C
8
10
12
VIN (V)
Figure 6. On−Resistance Variation with Input Voltage
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3
4
FDC6326L
TYPICAL CHARACTERISTICS (continued)
r(t), Normalized Effective
Transient Thermal Resistance
1
0.5
0.2
0.1
0.05
D = 0.5
0.2
RqJA (t) = r(t) * RqJA
RqJA = See Note 2
0.1
0.05
P(pk)
0.02
t1
0.02
0.01
t2
0.01
0.005
0.00001
TJ − TA = P * RqJA (t)
Duty Cycle, D = t1/t2
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
300
t1, Time (s)
Figure 7. Transient Thermal Response Curve
NOTE:
Thermal characterization performed on the conditions described in Note 2.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
SCALE 2:1
DATE 31 AUG 2020
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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