FDC6327C

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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • • P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. • Fast switching speed. • Low gate charge. • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications • DC/DC converter • Load switch • Motor driving N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V RDS(on) = 0.12Ω @ VGS = 2.5V RDS(on)= 0.25Ω @ VGS = -2.5V D2 S1 4 3 5 2 6 1 D1 G2 SuperSOT TM S2 -6 G1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 20 -20 V VGSS Gate-Source Voltage Drain Current ±8 -1.9 V ID ±8 2.7 8 -8 - Continuous (Note 1a) - Pulsed PD Power Dissipation (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range A W 0.7 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 130 Thermal Resistance, Junction-to-Case (Note 1) 60 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .327 FDC6327C 7” 8mm 3000 1999 Fairchild Semiconductor Corporation FDC6327C, Rev. E FDC6327C July 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA, Referenced to 25°C ID = - 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V ∆BVDSS ∆TJ IDSS On Characteristics N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch All 20 -20 V mV/°C 12 -19 All 1 -1 100 µA -100 nA 1.5 -1.5 V nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = - 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 2.7 A VGS = 4.5 V, ID = 2.7 A, TJ = 125°C VGS = 2.5 V, ID = 2.2 A VGS = -4.5 V, ID = -1.6 A VGS = -4.5 V, ID = -1.6 A, TJ = 125°C VGS = -2.5 V, ID = -1.3 A VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID = 2.7 A VDS = -5 V, ID = -1.9 A N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch N-Ch P-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.4 -0.4 0.9 -0.9 -2.1 2.3 0.069 0.094 0.093 0.141 0.203 0.205 8 -8 mV/°C 0.08 0.13 0.12 0.17 0.27 0.25 Ω A 7.7 4.5 S 325 315 75 65 35 24 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss P-Channel Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz pF pF FDC6327C, Rev. E FDC6327C Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 7 9 14 12 14 3 3 3.25 2.85 0.65 0.68 0.90 0.65 Max Units (Note 2) Gate-Drain Charge N-Channel VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω N-Channel VDS = 10 V, ID = 2.7 A, VGS = 4.5V P-Channel VDS = -10 V, ID = -1.9 A,VGS = -4.5V 15 14 18 25 22 25 9 9 4.5 4.0 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2) Voltage VGS = 0 V, IS = - 0.8 A (Note 2) N-Ch P-Ch N-Ch P-Ch 0.76 -0.79 0.8 -0.8 1.2 -1.2 A V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally. a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 °C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC6327C, Rev. E FDC6327C Electrical Characteristics FDC6327C Typical Characteristics: N-Channel 2.4 10 VGS = 4.5V 3.0V 2.5V 8 2.2 2 VGS = 2.0V 1.8 6 1.6 2.0V 4 1.4 2.5V 1.2 3.0V 2 3.5V 4.5V 1 1.5V 0.8 0 0 1 2 3 0 4 2 4 Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 8 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = 1.3A ID = 2.7A VGS = 4.5V 1.5 0.2 1.4 1.3 0.15 1.2 o TA = 125 C 1.1 0.1 1 o TA = 25 C 0.9 0.05 0.8 0.7 -50 -25 0 25 50 75 100 125 150 0 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 o TA = -55 C VDS = 5V VGS = 0V o 25 C o 125 C 8 1 o TA = 125 C o 25 C 0.1 6 o -55 C 0.01 4 0.001 2 0.0001 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.4 0.8 1.2 1.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6327C, Rev. E (continued) 500 5 VGS, GATE-SOURCE VOLTAGE (V) FDC6327C Typical Characteristics: N-Channel ID = 2.7A VDS = 5V f = 1MHz VGS = 0 V 10V 400 4 15V 3 300 2 200 1 100 0 0 CISS COSS CRSS 0 0.5 1 1.5 2 2.5 3 3.5 0 4 4 Figure 7. Gate-Charge Characteristics. 16 20 Figure 8. Capacitance Characteristics. 5 100µs RDS(ON) LIMIT 12 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 8 SINGLE PULSE o 1ms RθJA = 180 C/W 4 o TA = 25 C 10ms 1 100ms 3 1s DC 2 0.1 VGS = 4.5V SINGLE PULSE 1 o RθJA = 180 C/W o TA = 25 C 0 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. FDC6327C, Rev. E FDC6327C Typical Characteristics: P-Channel 10 2.4 VGS = -4.5V 2.2 -3.5V 8 -3.0V VGS = -2.0V 2 1.8 6 -2.5V -2.5V 1.6 4 1.4 -2.0V -3.0V -3.5V 1.2 2 -4.0V -4.5V 1 -1.5V 0 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 6 8 10 -ID, DIRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 ID = -1.9A VGS = -4.5V 1.4 ID = -1A 0.4 1.3 1.2 0.3 o TA = 125 C 1.1 0.2 1 0.9 o TA = 25 C 0.1 0.8 0.7 0 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 10 VGS = 0V o VDS = -5V TA = -55 C o 25 C 8 1 o 125 C o TA = 125 C 6 0.1 4 0.01 2 0.001 o 25 C o -55 C 0 0.0001 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 4 0 0.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6327C, Rev. E FDC6327C Typical Characteristics: P-Channel (continued) 450 5 VDS = -5.0V ID = -1.9A f = 1 MHz VGS = 0 V 400 -10V 4 350 -15V CISS 300 3 250 200 2 150 100 1 COSS 50 0 CRSS 0 0 0.5 1 1.5 2 2.5 3 0 3.5 4 Qg, GATE CHARGE (nC) SINGLE PULSE o RθJA = 180 C/W 4 o TA = 25 C 10ms 100ms DC 20 5 1ms 1 16 Figure 18. Capacitance Characteristics. 100µs RDS(ON) LIMIT 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate-Charge Characteristics. 10 8 3 1s 2 0.1 VGS = -4.5V SINGLE PULSE 1 o RθJA = 180 C/W o TA = 25 C 0 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. 100 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 20. Single Pulse Maximum Power Dissipation. FDC6327C, Rev. E FDC6327C Typical Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA = 180°C/W 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.0001 0.02 0.01 Single Pulse 0.001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 21. Transient Thermal Response Curve. FDC6327C, Rev. E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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