FDC640P

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC640P FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –4.5 A, –20 V RDS(ON) = 0.053 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Rugged gate rating (±12V) • Fast switching speed Applications • High performance trench technology for extremely low RDS(ON) • Battery management • Load switch • Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –4.5 A – Continuous (Note 1a) – Pulsed PD –20 Maximum Power Dissipation TJ, TSTG (Note 1a) 1.6 (Note 1b) 0.8 W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .640 FDC640P 7’’ 8mm 3000 units 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 5 Publication Order Number: FDC640P/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –14 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 3 0.039 0.062 0.053 ID(on) On–State Drain Current VGS = –4.5 V, ID = –4.5 A VGS = –2.5 V, ID = –3.6 A VGS = –4.5 V, ID = –4.5A,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –4.5 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.6 –1.0 –1.5 V mV/°C 0.053 0.080 0.077 –20 Ω A 16 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 890 pF 244 pF 123 pF (Note 2) 12 22 9 18 ns Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time 13 23 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –4.5 A, ns 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDC640P Electrical Characteristics FDC640P Typical Characteristics 3 15 -3.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -2.5V 12 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.16 1.5 ID = -2.25 A ID = -4.5 A VGS = -4.5 V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.5 0 1.3 1.2 1.1 1 0.9 0.8 0.7 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 o 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 12 25oC 10 -ID, DRAIN CURRENT (A) -4.0V 1 125oC 8 6 4 2 VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 0 3 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDC640P Typical Characteristics 1200 VDS = -5V ID = -4.5A -10V -15V 3 2 1 CISS 800 600 400 COSS 200 CRSS 0 0 0 2 4 6 8 10 0 12 5 Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 156oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RθJA = 156°C/W TA = 25°C 4 3 2 1 0 0.1 1 10 100 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 1000 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 156°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com