FDC640P_F095

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH), Specified VDSS RDS(ON) MAX ID MAX −20 V 0.053 W @ −4.5 V −4.5 A 0.080 W @ −2.5 V 2.5 V FDC640P D General Description D S DD This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 12 V). G TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL MARKING DIAGRAM Features • −4.5 V, −20 V. • • • • RDS(ON) = 0.053 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V Rugged Gate Rating (±12 V) Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(ON) This is a Pb−Free and Halide Free Device Applications • Battery Management • Load Switch • Battery Protection 640 MG G 640 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Parameter Symbol Value Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±12 V ID Drain Current −Continuous (Note 1a.) −Pulsed −4.5 −20 PD Maximum Power Dissipation (Note 1a.) (Note 1b.) TJ, TSTG Operating and Storage Junction Temperature Range 1 6 2 5 3 4 A ORDERING INFORMATION W 1.6 0.8 Device FDC640P −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Shipping† TSOT−23−6 (SUPERSOTt−6) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a.) 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W © Semiconductor Components Industries, LLC, 2001 May, 2022 − Rev. 6 1 Publication Order Number: FDC640P/D FDC640P ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit −20 − − V OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = –250 mA, Referenced to 25°C − −14 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V − − −1 mA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V − − −100 nA −0.6 −1.0 −1.5 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 mA DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = –250 mA, Referenced to 25°C − 3 − mV/°C Static Drain–Source On–Resistance VGS = −4.5 V, ID = −4.5 A VGS = −2.5 V, ID = −3.6 A VGS = −4.5 V, ID = −4.5 A, TJ = 125°C − − − 0.039 0.062 0.053 0.053 0.080 0.077 W On–State Drain Current VGS = −4.5 V, VDS = −5 V −20 − − A Forward Transconductance VGS = −5 V, ID = −4.5 A − 16 − S VDS = –10 V, VGS = 0 V, f = 1.0 MHz − 890 − pF DT J RDS(on) ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 244 − pF Crss Reverse Transfer Capacitance − 123 − pF − 12 22 ns − 9 18 ns − 24 38 ns − 13 23 ns − 9 13 nC − 2 − nC − 3 − nC Maximum Continuous Drain–Source Diode Forward Current − − −1.3 A Drain–Source Diode Forward Voltage − −0.7 −1.2 V SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 W VDS = −10 V, ID = −4.5 A, VGS = −4.5 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD VGS = 0 V, IS = −1.3 A (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a.78°C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board. b.156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 FDC640P TYPICAL CHARACTERISTICS 3 −3.0 V RDS(ON), Normalized Drain−Source On−Resistance −3.5 V 12 −2.5 V 9 6 −2.0 V 3 0 RDS(ON), Normalized Drain−Source On−Resistance VGS = −4.5 V 0 0.5 1 2 1.5 −2.5 V 1.5 −3.0 V 0 6 9 15 12 0.16 ID = −4.5 A VGS = −4.5 V 1 0.9 0.8 −25 0 25 50 75 100 125 ID = −2.25 A 0.14 0.12 0.1 TA = 125°C 0.08 0.06 TA = 25°C 0.04 0.02 1.5 150 Figure 3. On−Resistance Variation with Temperature 10 25°C TA = −55°C 10 125°C 8 6 4 2 1 1.5 2 2.5 3 4 3.5 4.5 5 Figure 4. On−Resistance Variation with Gate−to−Source Voltage −IS, Reverse Drain Current (A) VDS = −5 V 2 −VGS, Gate to Source Voltage (V) TJ, Junction Temperature (5C) −ID, Drain Current (A) 3 −4.5 V Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 1.1 0 0.5 −4.0 V 1 Figure 1. On−Region Characteristics 1.2 12 −3.5 V −ID, Drain Current (A) 1.3 0.7 −50 2 −VDS, Drain−Source Voltage (V) 1.5 1.4 VGS = −2.0 V 2.5 0.5 2.5 RDS(ON), On−Resistance (W) −ID, Drain Current (A) 15 2.5 1 TA = 125°C 25°C 0.1 −55°C 0.01 0.001 0.0001 3 VGS = 0 V 0 −VGS, Gate to Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 −VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 FDC640P TYPICAL CHARACTERISTICS (continued) −VGS, Gate Source Voltage (V) 5 1200 VDS = −5 V ID = −4.5 A −10 V 1000 Capacitance (pF) 4 −15 V 3 2 1 0 CISS 800 600 400 COSS 200 0 2 4 8 6 10 0 12 0 5 10 15 −VDS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 20 5 100 ms RDS(ON) Limit Peak Transient Power (W) 10 CRSS Qg, Gate Charge (nC) 100 −ID, Drain Current (A) f = 1 MHz VGS = 0 V 1 ms 10 ms 100 ms 1s 1 10 s 0.01 0.1 DC VGS = −4.5 V Single Pulse RqJA = 156°C/W TA = 25°C P(pk), 0.1 1 10 Single Pulse RqJA = 156°C/W TA = 25°C 4 3 2 1 0 0.1 100 1 10 100 1000 t1, Time (s) −VDS, Drain−Source Voltage (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), Normalized Effective Transient Thermal Resistance 1 D = 0.5 0.2 0.1 0.01 0.001 0.00001 RqJA (t) = r(t) + RqJA RqJA = 156°C/W 0.1 0.05 0.02 P(pk) t1 0.01 t2 Single Pulse 0.0001 TJ − TA = P * RqJA (t) Duty Cycle, D = t1/t2 0.001 0.01 0.1 1 10 t1, Time (s) Figure 11. Transient Thermal Response Curve NOTE: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 FDC640P POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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