June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V
R DS(ON) = 0.035 Ω @ VGS = 4.5 V.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Low gate charge ( typical 9 nC).
SuperSOTTM-6
SOT-23
SuperSOTTM-8
S
D
D
.55
A
G
SuperSOT
TM
pin 1
-6
D
Fast switching.
SuperSOTTM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
SOIC-16
SOT-223
SO-8
1
6
2
5
3
4
D
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter
FDC655AN
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
(Note 1a)
6.3
A
PD
Maximum Power Dissipation
(Note 1a)
1.6
- Pulsed
20
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
W
0.8
-55 to 150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
© 1998 Fairchild Semiconductor Corporation
FDC655AN Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
o
V
mV /oC
23
TJ = 55oC
1
µA
10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
3
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
1
VDS = VGS, ID = 250 µA
∆VGS(th)/∆TJ
Gate Threshold VoltageTemp.Coefficient
ID = 250 µA, Referenced to 25 C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 6.3 A
o
1.6
mV /oC
-4.2
TJ = 125oC
VGS = 4.5 V, ID = 5.5 A
0.023
0.027
0.035
0.045
0.029
0.035
20
Ω
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
A
gFS
Forward Transconductance
VDS = 10 V, ID = 6.3 A
4.5
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 15 V, VGS = 0 V,
830
pF
Coss
Output Capacitance
f = 1.0 MHz
185
pF
Crss
Reverse Transfer Capacitance
80
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
VDD = 15 V, ID = 1 A,
6
12
ns
tr
Turn - On Rise Time
VGS = 10 V, RGEN = 6 Ω
10
18
ns
tD(off)
Turn - Off Delay Time
18
29
ns
tf
Turn - Off Fall Time
5
12
ns
Qg
Total Gate Charge
VDS = 15 V, ID = 6.3 A,
9
13
nC
Qgs
Gate-Source Charge
VGS = 5 V
Qgd
Gate-Drain Charge
2.8
nC
3.1
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Continuous Source Diode Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.73
1.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78oC/W when mounted on a minimum on a 1 in2 pad of 2oz Cu in FR-4 board.
b. 156oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC655AN Rev.C
Typical Electrical Characteristics
VGS = 10V
2
4.5V
3.5V
6.0V
R DS(ON) , NORMALIZED
20
15
3.0V
10
5
2.5V
0
0
1
2
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
25
4.0V
4.5V
5.0V
7.0V
10V
1
0.5
3
VGS = 3.5V
1.5
0
5
10
VDS , DRAIN-SOURCE VOLTAGE (V)
15
20
25
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.1
I D = 6.3 A
VGS = 10 V
R DS(ON) , ON-RESISTANCE (OHM)
I D = 3.2A
1.4
1.2
1
0.8
0.6
-50
0.08
0.06
0.04
TA = 125°C
0.02
TA = 25°C
0
-25
0
25
50
75
100
125
2
150
4
Figure 3. On-Resistance Variation
20
I S , REVERSE DRAIN CURRENT (A)
25
VDS = 5V
25°C
125°C
20
15
10
5
0
2
V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
5
V GS = 0V
5
1
TA = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
1
8
Figure 4. On-Resistance Variation with
Gate-To-Source Voltage.
with Temperature.
TA = -55°C
6
V GS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
I D , DRAIN CURRENT (A)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
FDC655AN Rev.B
Typical Electrical Characteristics
2000
V DS = 5V
I D = 6.3A
1000
10V
8
15V
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
10
6
4
500
200
C oss
f = 1 MHz
V GS = 0V
100
2
0
C iss
0
3
6
9
12
15
18
0.5
V
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
DS
1
2
5
10
30
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
5
100
IT
IM
)L
ON
(
S
RD
5
1m
s
10m
s
100
ms
1s
DC
0.5
VGS = 10V
SINGLE PULSE
RθJA =156°C/W
TA = 25°C
0.1
0.01
0.05
0.1
SINGLE PULSE
RθJA =156 °C/W
TA = 25°C
4
1
0.05
us
0.2
POWER (W)
20
3
2
1
0
0.01
0.5
1
2
5
10
20 30
0.1
50
1
10
100
300
SINGLE PULSE TIME (SEC)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
1
TRANSIENT THERMAL RESISTANCE
ID , DRAIN CURRENT (A)
C rss
50
0.1
0.5
D = 0.5
0.2
0.1
0.05
R JA (t) = r(t) * R θJA
θ
R
= 156 °C/W
θJA
0.2
0.1
P(pk)
0.05
t1
0.02
0.02
0.01
t2
TJ - TA = P * R θJA (t)
0.01
Duty Cycle, D = t 1/ t 2
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
FDC655AN Rev.B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
