ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Single N-Channel, Logic Level, PowerTrench® MOSFET
30 V, 6.3 A, 25 mΩ
Features
General Description
Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.3 A
This N-Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the onstate resistance and yet maintain superior switching
performance.
Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
Fast switching
Low gate charge
These devices are well suited for low voltage and battery
powered applicatoins where low in-line power loss and fast
switching are required.
High performance trchnology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
D
D
D
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
30
Units
V
±20
V
6.3
A
20
Power Dissipation
( Note 1a)
1.6
Power Dissipation
(Note 1b)
0.8
Operating and Storage Junction Temperature Range
W
-55 to + 150
°C
78
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
.55B
Device
FDC655BN
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Package
SSOT-6TM
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
Publication Order Number:
FDC655BN/D
FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET
FDC655BN
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3
V
30
V
25
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1
1.9
-5
mV/°C
VGS = 10 V, ID = 6.3 A
21
25
VGS = 4.5 V, ID = 5.5 A
26
33
VGS = 10 V, ID = 6.3 A, TJ = 125°C
30
36
VDS = 10 V, ID = 6.3 A
35
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
470
620
pF
100
130
pF
60
90
pF
Ω
3.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 15 V,
ID = 6.3 A
6
11
ns
2
10
ns
15
26
ns
2
10
ns
9
13
nC
5
7
nC
1.4
nC
1.6
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.3 A
1.3
(Note 2)
IF = 6.3 A, di/dt = 100 A/µs
A
0.8
1.2
V
15
26
ns
4
10
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board.
b. 156 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width
