FDC658AP

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using ON Semiconductor advanced PowerTrench process. It has been optimized for battery power management applications. „ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A „ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A „ Low Gate Charge Applications „ High performance trench technology for extremely low rDS(on) „ Battery management „ Load switch „ RoHS Compliant „ Battery protection „ DC/DC conversion D S D PIN 1 D G D 1 6 2 5 3 4 SuperSOTTM-6 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain-Source Voltage Parameter VGS Gate-Source Voltage Drain Current - Continuous ID (Note 1a) TJ, TSTG Units V r25 V -4 A -20 - Pulsed Maximum Power dissipation PD Ratings -30 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 1.6 W 0.8 -55 to +150 °C Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RTJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking .58A Device FDC658AP ©2011 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Reel Size 7inch Tape Width 8mm Quantity 3000 units Publication Order Number: FDC658AP/D FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET FDC658AP Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250PA, Referenced to 25°C -30 V IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = -24V -1 PA IGSS Gate-Body Leakage VGS = r25V, VDS = 0V r100 nA -3 V -22 mV/°C On Characteristics (Note 2) VGS(TH) Gate Threshold Voltage VDS = VGS, ID = -250PA 'VGS(TH) 'TJ Gate Threshold Voltage Temperature Coefficient ID = -250PA, Referenced to 25°C rDS(on) Static Drain-Source On-Resistance -1 -1.8 4 mV/°C ID = -4A, VGS = -10V 44 50 ID = -3.4A, VGS = -4.5V 67 75 ID = -4A, VGS = -10V, TJ = 125°C 60 70 m: ID(ON) On-State Drain Current VGS = -10V, VDS = -5V gFS Forward Transconductance ID = -4A, VDS = -5V 8.4 VDS = -15V, VGS = 0V, f = 1MHz 470 680 126 180 pF 61 90 pF -20 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGEN = 6: VDS = -15V, ID = -4A, VGS = -5V 7 14 ns 12 22 ns 16 29 ns 6 12 ns 6 8.1 nC 2.1 nC 2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.3 A -1.2 V Notes: 1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. b) 156oC/W whe mounted on a minimum pad of 2 oz copper a) 78oC/W when mounted on a 1 in2 pad of 2 oz copper Scale 1: 1 on letter size paper 2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0% www.onsemi.com 2 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2 -5.0V VGS = -10V -I D , DRAIN CURRENT (A) -6.0V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 -4.5V 15 -4.0V 10 -3.5V 5 -3.0V 1.8 VGS = -4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V -10V 1 0 0.8 0 2 1 3 4 5 0 4 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 16 0.22 1.6 ID = -4.0A VGS = -10V ID = -2.0A r DS(on), DRAIN TO SOURCE ON RESISTANCE (OHM) 1.4 1.2 1 0.8 0.6 -50 0.18 0.14 TJ = 125oC 0.1 o TJ = 25 C 0.06 0.02 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 15 10 o TJ = -55 C -I S , REVERSE DRAIN CURRENT (A) 25 C o VDS = -5V -I D , D R A IN C U R R E N T (A ) 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 -ID, DRAIN CURRENT (A) 12 o 125 C 9 6 3 0 VGS = 0V 1 o TJ = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 1 2 3 4 5 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET Typical Characteristics -V G S , G A T E -S O U R C E V O L T A G E (V ) 10 600 VDS = -5V ID = -4A 8 C A PA C ITA N C E (pF) -15V 6 4 450 300 Coss 150 2 Crss 0 0 0 2 4 6 8 0 10 6 Figure 7. Gate Charge Characteristics 18 24 30 Figure 8. Capacitance vs Drain to Source Voltage 100 P(pk), PEAK TRA NSIENT PO W ER (W ) 10 rDS(on) LIMIT 100us 10 1ms 10ms 1 100ms VGS = -10V SINGLE PULSE RJA = 156oC/W 0.1 1s o TA = 25 C DC 0.01 0.1 1 10 SINGLE PULSE RJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 100 0.1 1 10 100 t, PULSE WIDTH (s) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -I D , DR A IN C UR REN T (A ) f = 1 MHz VGS = 0 V Ciss -10V Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RJA(t) = r(t) x RJA 0.2 RJA = 156 C/W 0.1 o 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P x RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t, RECTANGULAR PULSE DURATION Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 1000 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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