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FDC86244
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 2.3 A, 144 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A
Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Applications
Load Switch
Fast switching speed
Synchronous Rectifier
100% UIL Tested
Primary Switch
RoHS Compliant
S
D
S
4
3
G
D
5
2
D
D
6
1
D
D
G
D
Pin 1
D
SuperSOTTM
-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
PD
TJ, TSTG
Units
V
±20
V
2.3
10
Single Pulse Avalanche Energy
EAS
Ratings
150
(Note 3)
12
Power Dissipation
(Note 1a)
1.6
Power Dissipation
(Note 1b)
0.8
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
30
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.244
Device
FDC86244
©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.1.3
Package
SSOT-6
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDC86244 N-Channel Shielded Gate PowerTrench® MOSFET
April 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.0
V
150
V
103
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 2.3 A
113
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 1.9 A
128
188
VGS = 10 V, ID = 2.3 A, TJ = 125 °C
214
273
gFS
Forward Transconductance
2.0
2.5
-9
VDD = 5 V, ID = 2.3 A
mV/°C
144
6
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
260
345
pF
32
45
pF
1.7
5
pF
Ω
1.3
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 75 V, ID = 2.3 A,
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 75 V
ID = 2.3 A
4.7
10
ns
1.4
10
ns
10
20
ns
3.1
10
ns
4.2
6
nC
2.4
4
nC
1.0
nC
1.0
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.3 A
(Note 2)
IF = 2.3 A, di/dt = 100 A/μs
0.8
1.3
V
45
73
ns
33
53
nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
a. 78 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 oC, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.1.3
2
www.fairchildsemi.com
FDC86244 N-Channel Shielded Gate Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
5
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
10
VGS = 6 V
8
VGS = 5 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 4.5 V
2
0
VGS = 4 V
0
1
2
3
4
VGS = 4 V
VGS = 4.5 V
4
VGS = 5 V
3
2
VGS = 6 V
1
0
5
0
2
Figure 1. On-Region Characteristics
8
10
500
ID = 2.3 A
VGS = 10 V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
10
300
TJ = 125 oC
200
TJ = 25 oC
100
4
6
8
10
10
IS, REVERSE DRAIN CURRENT (A)
VDS = 5 V
6
TJ = 150 oC
4
TJ = 25 oC
2
TJ = -55 oC
3
ID = 2.3 A
Figure 4. On-Resistance vs Gate to
Source Voltage
8
2
400
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
2
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
4
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
5
VGS = 0 V
1
TJ = 25 oC
0.1
0.01
0.001
0.2
6
TJ = 150 oC
TJ = -55 oC
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.1.3
3
1.2
www.fairchildsemi.com
FDC86244 N-Channel Shielded Gate Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
400
ID = 2.3 A
VDD = 50 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
6
VDD = 100 V
4
100
Coss
10
2
f = 1 MHz
VGS = 0 V
0
0
1
2
3
4
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
7
2.5
ID, DRAIN CURRENT (A)
6
5
TJ
= 25 oC
4
TJ = 100 oC
3
TJ = 125 oC
2
2.0
VGS = 10 V
1.5
VGS = 6 V
1.0
0.5
o
RθJA = 78 C/W
1
0.01
0.1
1
0.0
25
2
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
20
10
100 us
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.01
1s
10 s
RθJA = 175 oC/W
DC
TA = 25 oC
0.001
100
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
IAS, AVALANCHE CURRENT (A)
Crss
1
0.1
5
0.1
1
10
100
500
TA = 25 oC
100
10
1
0.5 -4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.1.3
SINGLE PULSE
RθJA = 175 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDC86244 N-Channel Shielded Gate Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 175 C/W
0.001 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Juncton-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.1.3
5
www.fairchildsemi.com
FDC86244 N-Channel Shielded Gate Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
SYMM
C
L
0.95
C
3.00
2.80
A
4
6
0.95
1.00 MIN
B
3.00
2.60
1.70
1.50
1
2.60
C
3
0.50
0.30
0.95
0.20
1.90
M
0.70 MIN
A B
LAND PATTERN RECOMMENDATION
(0.30)
SEE DETAIL A
1.10 MAX
H
1.00
0.70
C
0.10
0.00
0.10 C
GAGE PLANE
0.25
8°
0°
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
0.20
0.08
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING FILE NAME: MKT-MA06AREVF
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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