FDC8886

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC8886 N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed Application „ RoHS Compliant „ Primary Switch S D S 4 3 G D 5 2 D D 6 1 D D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 3) Drain Current -Continuous (Package limited) TC = 25 °C ID TA = 25 °C -Continuous TJ, TSTG Units V ±20 V 8.0 (Note 1a) -Pulsed PD Ratings 30 6.5 A 25 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 30 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking .886 Device FDC8886 ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.1.4 Package SSOT-6 Reel Size 7 ’’ 1 Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET April 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 18 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 VGS = 10 V, ID = 6.5 A 19 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 6.0 A 30 36 VGS = 10 V, ID = 6.5 A, TJ = 125 °C 25 30 VDD = 5 V, ID = 6.5 A 24 VDS = 15 V, VGS = 0 V, f = 1 MHz 348 465 pF 135 180 pF 16 25 pF gFS Forward Transconductance 1.2 1.9 mV/°C 23 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 6.5 A, VGS = 10 V, RGEN = 6 Ω 5 10 ns 1 10 ns 11 19 ns 1 10 ns nC Total Gate Charge VGS = 0 V to 10 V 5.3 7.4 Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 6.5 A 2.5 3.5 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC 1.0 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 6.5 A (Note 2) IF = 6.5 A, di/dt = 100 A/μs 0.86 1.2 V 14 22 ns 3 10 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.175 °C/W when mounted on a minimum pad of 2 oz copper a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.1.4 2 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3.5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 25 VGS = 6 V VGS = 4.5 V 20 VGS = 4 V 15 10 VGS = 3.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.4 0.8 1.2 1.6 2.0 VGS = 3.5 V 3.0 VGS = 4 V 2.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.0 VGS = 4.5 V 1.5 VGS = 6 V 1.0 0.5 VGS = 10 V 0 5 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 -50 25 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 125 oC 20 TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 25 20 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID = 6.5 A 0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) VDS = 5 V 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 20 80 ID = 6.5 A VGS = 10 V 0.7 -75 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 1.4 10 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1 2 3 4 TJ = 150 oC 1 TJ = 25 oC TJ = -55 oC 0.1 0.01 0.2 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.1.4 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 ID = 6.5 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 100 Coss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 6 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 8 7 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 5 TJ = 100 oC 4 3 TJ = 125 oC 2 6 VGS = 10 V 4 VGS = 4.5 V 2 o RθJA = 78 C/W 1 0.01 0.1 1 0 25 5 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 30 P(PK), PEAK TRANSIENT POWER (W) 200 10 100 μs 1 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 175 oC/W TA = 25 oC 0.01 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 10 0.1 0.1 1 10 100200 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 3 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.1.4 SINGLE PULSE RθJA = 175 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.1.4 5 www.fairchildsemi.com FDC8886 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted SYMM C L 0.95 C 3.00 2.80 A 4 6 0.95 1.00 MIN B 3.00 2.60 1.70 1.50 1 2.60 C 3 0.50 0.30 0.95 0.20 1.90 M 0.70 MIN A B LAND PATTERN RECOMMENDATION (0.30) SEE DETAIL A 1.10 MAX H 1.00 0.70 C 0.10 0.00 0.10 C GAGE PLANE 0.25 8° 0° 0.55 0.35 SEATING PLANE 0.60 REF DETAIL A SCALE: 50X 0.20 0.08 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MO-193. VAR. AA, ISSUE E. B) ALL DIMENSIONS ARE IN MILLIMETERS. C PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.25mm PER END. PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25mm PER SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS ARE DETERMINED AT DATUM H. D) DRAWING FILE NAME: MKT-MA06AREVF ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com