FDD2570
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High power and current handling capability.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
Drain Current
– Pulsed
PD
TA=25oC unless otherwise noted
(Note 1a)
Units
150
V
±20
V
4.7
A
30
(Note 1)
70
@ TA = 25°C
(Note 1a)
3.2
@ TA = 25°C
(Note 1b)
Maximum Power Dissipation @ TC = 25°C
TJ, TSTG
Ratings
W
1.3
-55 to +150
°C
(Note 1)
1.8
°C/W
(Note 1b)
96
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2570
FDD2570
13’’
16mm
2500 units
2001 Fairchild Semiconductor Corporation
FDD2570 Rev C(W)
FDD2570
February 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 75 V,
ID = 4.7 A
375
mJ
4.7
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 120 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V
VDS = 0 V
–100
nA
2.6
–7
4
V
mV/°C
60
63
120
80
90
158
mΩ
On Characteristics
150
V
mV/°C
150
(Note 2)
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
2
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 4.7 A
ID = 4.5 A
VGS = 6 V,
VGS = 10 V, ID = 4.7 A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 6.3 A
20
VDS = 75 V,
V GS = 0 V,
1907
pF
117
pF
33
pF
30
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
f = 1.0 MHz
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
21
34
ns
Qg
Total Gate Charge
39
62
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 75 V,
VGS = 10 V,
VDS = 75 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 4.7 A,
12
19
ns
7
14
ns
41
65
ns
7
nC
9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A
Voltage
(Note 2)
0.7
2.7
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA= 40oC/W when
mounted on a 1in2 pad of
2oz copper.
b) RθJA= 96oC/W on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDD2570 Rev C(W)
FDD2570
Electrical Characteristics
FDD2570
Typical Characteristics
1.6
30
VGS = 10V
25
VGS =
5.0V
4.5V
1.4
20
4.5V
1.2
15
5.0V
10V
4.0V
10
1
5
3.5V
0.8
0
0
1
2
3
4
0
5
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
0.2
ID = 2.2 A
ID = 4.7 A
VGS = 10 V
2.2
0.16
1.8
o
TA = 125 C
1.4
0.12
1
o
TA = 25 C
0.08
0.6
0.2
-50
-25
0
25
50
75
100
125
150
0.04
3
o
4
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
15
VDS = 10 V
VGS = 0V
1
12
o
TA = 125 C
0.1
9
o
TA = 125 C
o
25 C
o
25 C
6
0.01
o
-55 C
o
-55 C
0.001
3
0.0001
0
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD2570 Rev C(W)
FDD2570
Typical Characteristics
3000
10
ID = 4.7 A
VDS = 25 V
50 V
f = 1MHz
VGS = 0 V
2500
8
CISS
75
2000
6
1500
4
1000
CRSS
2
500
0
0
COSS
0
10
20
30
0
40
10
20
30
40
50
60
Figure 7. Gate Charge Characteristics.
80
90
100
SINGLE PULSE
RθJA = 96 °C/W
TA = 25°C
100us
1ms
10ms
10
80
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
60
100ms
1s
1
10s
40
DC
0.1
VGS = 10V
SINGLE PULSE
0.01
20
o
RθJA = 96 C/W
o
TA = 25 C
0
0.001
0.1
1
10
100
0.01
1000
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA(t) = r(t) + R θ JA
R θ JA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
T J - T A = P * R θ JA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE
0.001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD2570 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
