FDD306P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Features Applications ■ –6.7 A, –12 V. ■ DC/DC converter RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. S D G G S TO-252 D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current A PD – Continuous (Note 3) –6.7 – Pulsed (Note 1a) –54 Power Dissipation for Single Operation (Note 1) 52 (Note 1a) 3.8 (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 1.6 –55 to +175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD306P FDD306P 13’’ 16mm 2500 units ©2005 Fairchild Semiconductor Corporation FDD306P Rev. 2.2 1 www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units –0.6 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V IGSSF Gate–Body Leakage VGS = ±8V, VDS = 0 V –12 V –1 µA ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 2.2 RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –6.7 A VGS = –2.5 V, ID = –6.1 A VGS = –1.8 V, ID = –4.8 A VGS = –4.5 V, ID = –6.7A, TJ = 125°C 21 29 42 25 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –6.7 A 22 VDS = –6 V, VGS = 0 V, f = 1.0 MHz 1290 pF 590 pF –0.4 –0.5 –1.5 V mV/°C 28 41 90 –45 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance 430 pF VGS = 15 mV, f = 1.0 MHz 4.2 Ω VDD = –6 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 16 Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –6V, ID = –6.7 A, VGS = –4.5 V 29 ns 8 16 ns 34 54 ns 41 65 ns 15 21 nC 2.0 nC 4.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A Trr Diode Reverse Recovery Time Irm Diode Reverse Recovery Current IF = –6.7 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge –3.2 (Note 2) –0.8 –1.2 37 (Note 3) A V ns 0.9 A 17 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD -----------------------R DS ( ON ) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. 4. Starting TJ = 25°C, L = 3 mH, IAS = -4 A, VGS = -10 V, V = -12 V. DD FDD306P Rev. 2.2 2 www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 2.5 54 VGS = -4.5V VGS = -1.8V -3.0V -3.5V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 45 -4.0V -2.5V 36 27 -2.0V 18 -1.8V 9 -2.0V 2 -2.5V 1.5 -3.0V -3.5V -4.5V 1 0.5 0 0 1 2 3 0 4 9 18 1.4 45 54 0.1 I D = -6.7A VGS = -4.5V 1.3 I D = -3.4A RDS(ON), ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 36 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.2 1.1 1 0.9 0.8 -50 0.08 0.06 TA = 125°C 0.04 T A = 25°C 0.02 0 -25 0 25 50 75 100 125 150 175 0 2 4 6 10 8 TJ, JUNCTION TEMPERATURE (°C) -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 54 TA = -55°C VDS = - 5V 125°C VGS = 0V -I S, REVERSE DRAIN CURRENT (A) 45 -ID, DRAIN CURRENT (A) 27 -I D, DRAIN CURRENT (A) -V DS, DRAIN-SOURCE VOLTAGE (V) 25°C 36 27 18 9 0 10 1 T A = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 1 2 3 4 0 -VGS , GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. FDD306P Rev. 2.2 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics 2400 5 f = 1MHz VGS = 0 V 2000 4 V DS = -4V -8V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) I D = -6.7A 3 -6V 2 1600 Ciss 1200 Coss 800 Crss 1 400 0 0 0 4 8 12 20 16 0 3 Figure 7. Gate Charge Characteristics. 12 Figure 8. Capacitance Characteristics. 20 100 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 1000 -ID, DRAIN CURRENT (A) 9 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) Q g, GATE CHARGE (nC) 1ms 10ms 100ms 10 1s 10s DC 1 VGS =-4.5V SINGLE PULSE RθJA = 96 oC/W 0.1 TA = 25 oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 96°C/W TA = 25°C 15 10 5 0 0.001 100 0.01 0.1 -V DS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 t 1, TIME (sec) 1 D = 0.5 RθJA (t) = r(t) * Rθ JA R θJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 /t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD306P Rev. 2.2 4 www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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