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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
General Description
Q1: N-Channel
These
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
dual N and P- Channel enhancement mode Power
MOSFETs are produced using ON Semiconductor’s advanced
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
PowerTrench® process that has been especially tailored
minimize on -state resistance and
Q2: P-Channel
yet
to
maintain superior
switching performance.
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
Applications
100% UIL Tested
Inverter
RoHS Compliant
H-Bridge
D1
D2
D1/D2
G1
G2
G2
S2
G1
S1
Dual DPAK 4L
S1
N-Channel
S2
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
80
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
TC = 25°C
TA = 25°C
- Continuous
ID
- Pulsed
Power Dissipation for Single Operation
TC = 25°C
(Note 1)
TA = 25°C (Note 1b)
Single Pulse Avalanche Energy
EAS
TJ, TSTG
(Note 3)
Operating and Storage Junction Temperature Range
Units
V
V
±20
±20
13.9
-9.4
4.3
-2.8
20
-10
35
TA = 25°C (Note 1a)
PD
Q2
-80
A
32
3.1
W
1.3
37
54
-55 to +150
mJ
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
3.5
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
3.9
°C/W
Package Marking and Ordering Information
Device Marking
FDD3510H
Device
FDD3510H
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Package
TO-252-4L
1
Reel Size
13”
Tape Width
16mm
Quantity
2500 units
Publication Order Number:
FDD3510H/D
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
FDD3510H
Symbol
Parameter
Test Conditions
Type
Min
Q1
Q2
80
-80
Typ
Max
Units
Off Characteristics
ID =250µA, VGS = 0V
ID = -250µA, VGS = 0V
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS = 64V, VGS = 0V
VDS = -64V, VGS = 0V
IGSS
Gate to Source Leakage Current
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
V
84
-67
mV
/°C
Q1
Q2
1
-1
µA
VGS = ±20V, VDS = 0V
Q1
Q2
±100
±100
nA
nA
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Q1
Q2
4.0
-3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
2.0
-1.0
2.6
-1.6
Q1
Q2
-6.7
4.6
Q1
64
70
121
80
88
152
Q2
153
184
259
190
224
322
VDD = 10V, ID = 4.3A
VDD = -5V, ID = -2.8A
Q1
Q2
15
6.8
Q1
VDS = 40V, VGS = 0V, f = 1MHZ
Q1
Q2
600
660
800
880
pF
Q1
Q2
56
50
75
70
pF
Q1
Q2
27
25
41
40
pF
Q1
Q2
1.7
7.2
Q1
Q2
7
6
13
11
ns
Q1
Q2
2
3
10
10
ns
Q1
Q2
16
25
29
40
ns
Q1
Q2
2
5
10
10
ns
Q1
Q2
13
14
18
20
nC
Q1
Q2
2.3
1.9
nC
Q1
Q2
3.2
2.9
nC
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
VGS = 10V, ID = 4.3A
VGS = 6.0V, ID = 4.1A
VGS = 10V, ID = 4.3A, TJ = 125°C
VGS = -10V, ID = -2.8A
VGS = -4.5V, ID = -2.6A
VGS = -10V, ID = -2.8A, TJ = 125°C
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q2
VDS = -40V, VGS = 0V, f = 1MHZ
f = 1MHz
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Q1
VDD = 40V, ID = 4.3A,
VGS = 10V, RGEN = 6Ω
Q2
VDD = -40V, ID = -2.8A,
VGS = -10V, RGEN = 6Ω
Q1
VGS = 10V, VDD = 40V, ID = 4.3A
Q2
VGS = -10V, VDD = -40V, ID = -2.8A
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2
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
-0.8
1.2
-1.2
V
Q1
Q2
29
30
46
48
ns
Q1
Q2
28
30
45
48
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.6A
VGS = 0V, IS = -2.6A
(Note 2)
(Note 2)
Q1
IF = 4.3A, di/dt = 100A/s
Q2
IF = -2.8A, di/dt = 100A/s
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
Q1
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
Q2
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V.
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3
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
VGS = 4.5V
15
PULSE DURATION = Xµs
DUTY CYCLE = X%MAX
10
VGS = 4V
5
VGS = 3.5V
0
0
1
2
3
VGS = 3.5V
3.5
3.0
VGS = 4V
2.5
VGS = 4.5V
2.0
VGS = 6V
1.5
1.0
VGS = 10V
0.5
4
0
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
15
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
300
ID = 4.3A
VGS = 10V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
2
IS, REVERSE DRAIN CURRENT (A)
15
VDS = 5V
10
TJ = 150oC
TJ = 25oC
5
TJ = -55oC
0
5
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4
TJ = 25oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
3
TJ = 125oC
100
20
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 4.3A
200
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
20
10
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
1.2
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
1000
ID = 4.3A
Ciss
8
VDD = 40V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = 30V
VDD = 50V
4
100
Coss
2
f = 1MHz
VGS = 0V
0
0
2
4
6
8
10
12
10
0.1
14
Figure 7. Gate Charge Characteristics
10
100
Figure 8. Capacitance vs Drain
to Source Voltage
15
5
4
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
3
TJ = 25oC
2
TJ = 125oC
12
VGS = 10V
9
VGS = 6V
6
3
o
RθJC = 3.5 C/W
1
0.01
0.1
1
0
25
10
125
150
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
50
5
100us
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.5oC/W
0.1
TC = 25oC
1
10
1ms
10ms
100ms
DC
100
P(PK), PEAK TRANSIENT POWER (W)
10
10
0.05
0.5
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
75
50
tAV, TIME IN AVALANCHE(ms)
ID, DRAIN CURRENT (A)
Crss
VGS = 10V
4
10
3
SINGLE PULSE
RθJC = 3.5oC/W
10
TC = 25oC
2
10
10
-6
10
VDS, DRAIN to SOURCE VOLTAGE (V)
-5
10
-4
10
-3
10
-2
10
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
-1
10
t, PULSE WIDTH (sec)
1
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, ZθJC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC = 3.5 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 96 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
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6
100
1000
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2.5
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
8
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
4
VGS = -3V
2
VGS = -2.5V
0
0
1
2
3
4
VGS = -2.5V
VGS = -3V
2.0
VGS = -3.5V
1.5
VGS = -4.5V
1.0
0.5
0
5
2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
8
10
600
ID = -2.8A
VGS = -10V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4
6
-ID, DRAIN CURRENT(A)
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. On- Region Characteristics
ID = -2.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
500
400
TJ = 125oC
300
200
TJ = 25oC
100
100 125 150
4
2
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
10
-IS, REVERSE DRAIN CURRENT (A)
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
8
VDS = -5V
6
4
TJ = 150oC
2
TJ = 25oC
TJ = -55oC
0
1
2
3
4
5
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
0.01
TJ = -55oC
0.001
0.0
-VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
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7
1.2
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted
1000
ID = -2.8A
Ciss
8
VDD = -40V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = -30V
VDD = -50V
4
100
2
f = 1MHz
VGS = 0V
0
0
2
4
6
8
10
12
14
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
10
-ID, DRAIN CURRENT (A)
4
3
TJ =
25oC
2
TJ = 125oC
8
VGS = -10V
6
VGS = -4.5V
4
2
o
RθJC = 3.9 C/W
1
0.1
1
0
25
10
75
50
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
Figure 24. Maximum Continuous Drain
Current vs Case Temperature
Figure 23. Unclamped Inductive
Switching Capability
P(PK), PEAK TRANSIENT POWER (W)
20000
20
10000
10
-ID, DRAIN CURRENT (A)
Crss
10
0.1
16
Qg, GATE CHARGE(nC)
-IAS, AVALANCHE CURRENT(A)
Coss
100us
1ms
1 THIS AREA IS
LIMITED BY rds(on)
10ms
SINGLE PULSE
TJ = MAX RATED
100ms
o
RθJC = 3.9 C/W
0.1
DC
TC = 25oC
0.05
1
10
100
VGS = -10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
SINGLE PULSE
X –o Tx
3.9 C/W
RθJC = ------------------I = I25
125
1000
TX = 25oC
100
200
-VDS, DRAIN to SOURCE VOLTAGE (V)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
Figure 25. Forward Bias Safe
Operating Area
Figure 26. Single Pulse Maximum Power
Dissipation
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8
1
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
o
RθJC = 3.9 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 27. Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 96 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 28. Transient Thermal Response Curve
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9
100
1000
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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