FDD3670

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD3670 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features • 34 A, 100 V. RDS(ON) = 32 mΩ @ V GS = 10 V RDS(ON) = 35 mΩ @ V GS = 6 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Low gate charge (57 nC typical) • Fast switching speed These MOSFETs f eature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. High performance trench technology for extremely • low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D G G S TO-252 S Absolute Maximum Ratings Symbol Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous Drain Current – Pulsed PD TJ , TSTG TA=25oC unless otherwise noted Ratings Units (Note 1) ±20 34 A (Note 3) 100 100 Maximum Power Dissipation @ TC = 25°C (Note 1) 83 @ TA = 25°C (Note 1a) 3.8 @ TA = 25°C (Note 1b) Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient V W 1.6 –55 to +175 °C (Note 1) 1.8 °C/W (Note 1b) 96 °C/W Thermal Characteristics RθJ C V Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3670 FDD3670 13’’ 16mm 2500 units 2001 Semiconductor Components Industries, LLC. November-2017, Rev. 2 Publication Order Number: FDD3670/D Symbol Parameter Drain-Source Avalanche Ratings WDSS IAR TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units (Note 2) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current V DD = 50 V, ID = 7.3 A 360 mJ 7.3 A Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C V DS = 80 V, V GS = 0 V 10 IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V, V DS = 0 V –100 nA 4 V On Characteristics 100 V mV/°C 92 (Note 2) V GS(th) Gate Threshold Voltage ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance 2 ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = 5 V, ID = 7.3 A V DS = 50 V, V GS = 0 V, V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C = 10 V, ID = 7.3 A = 10 V, ID = 7.3 A, TJ = 125°C = 6 V, ID = 7.0 A = 10 V, V DS = 5 V Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) f = 1.0 MHz 2.5 –7.2 22 39 24 mV/°C 32 56 35 25 15 mΩ A 31 S 2490 pF 265 pF 80 pF (Note 2) 16 26 ns 10 18 ns Turn–Off Delay Time 56 84 ns tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge 57 80 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DD = 50 V, V GS = 10 V, V DS = 50 V, V GS = 10 V ID = 1 A, RGEN = 6 Ω ID = 7.3 A, 11 nC 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 2.7 A Voltage (Note 2) 0.72 2.7 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Pulse Id refers to Figure.9 Forward Bias Safe Operation Area. www.onsemi.com 2 FDD3670 Electrical Characteristics FDD3670 Typical Characteristics 2 V GS = 10V ID, DRAIN CURRENT (A) 50 5.5V 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 40 30 4.0V 20 10 3.5V 1 2 3 4 1.6 V GS = 4.0V 1.4 4.5V 1.2 0 5 10 20 RDS(ON), ON-RESISTANCE ( Ω ) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 0 25 50 75 100 125 150 T A = 125o C 0.04 0.03 0.02 T A = 25o C 0.01 0 175 3 4 5 7 8 9 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 V DS = 5V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 40 125o C 20 25o C 10 60 0.05 T J, JUNCTION TEMPERATURE ( oC) 30 50 ID = 3.7A 1.8 50 40 0.06 ID = 7.3A V GS = 10V -25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.4 -50 10V ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 2 5.5V 7.0V 1 V DS, DRAIN-SOURCE VOLTAGE (V) 2.2 5.0V 0.8 0 0 1.8 T A = -55oC VGS = 0V 10 T A = 125o C 1 25o C 0.1 -55o C 0.01 0.001 0.0001 0 2 3 4 5 0 6 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDD3670 Typical Characteristics 4500 ID = 7.3A VDS = 20V 8 f = 1MHz V GS = 0 V 4000 50V 3500 80V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 3000 CISS 2500 2000 1500 1000 2 0 0 0 10 20 30 40 50 60 0 20 Qg, GATE CHARGE (nC) 60 80 100 Figure 8. Capacitance Characteristics. 200 P(PK), PEAK TRANSIENT POWER (W) 10000 100 10 μs 10 100 μs THIS AREA IS LIMITED BY rDS(on) RθJC = 1.8 oC/W TC = 25 oC 1 ms 1 CURVE BENT TO MEASURED DATA 10 10 ms DC 100 SINGLE PULSE RθJC = 1.8 oC/W TC = 25 oC 1000 SINGLE PULSE TJ = MAX RATED 1 0.1 40 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) C RSS COSS 500 200 100 50 -5 10 -4 -3 10 10 -2 -1 10 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC RθJC = 1.8 C/W 0.01 0.005 -5 10 -4 10 -3 10 -2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 -1 10 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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