FDD3690

FDD3690 FDD3690 100V N-Channel PowerTrench MOSFET Features General Description • 22 A, 100 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Fast Switching • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 22 A (Note 1a) 75 PD Power Dissipation Symbol Parameter Pulsed TJ, TSTG @TC=25°C (Note 3) 60 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range W 1.6 –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3690 FDD3690 13’’ 16mm 2500 units © 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDD3690/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 50 V, ID = 5.4 A 175 mJ 5.4 A Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V 10 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) V 100 78 mV/°C µA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, ID = 5.4 A VGS = 6 V, ID = 5.2 A VGS = 10 V, ID = 5.4 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 5.4 A VDS = 50 V, f = 1.0 MHz V GS = 0 V, 2 2.4 –6.2 4 44 47 88 64 71 135 V mV/°C mΩ 20 A 20 S 1514 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 82 pF 44 pF (Note 2) VDD = 50 V, VGS = 10 V, VDS = 50 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω 11 20 ns 6.5 15 ns 29 60 ns ID = 5.4 A, 10 20 ns 28 39 nC 6.2 nC 5.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.73 3.2 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A www.onsemi.com 2 FDD3690 Electrical Characteristics FDD3690 Typical Characteristics 1.6 VGS = 10V 5.0V 30 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 35 4.5V 25 4.0V 20 15 10 3.5V 5 1.4 VGS = 4.0V 4.5V 5.0V 1.2 10V 1 0.8 0 0 1 3 2 0 4 5 10 15 20 25 30 35 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 2.6 ID = 2.7 A ID = 5.4 A VGS = 10V 2.4 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.12 TA = 125oC 0.09 TA = 25oC 0.06 0.03 0 175 2 3 4 5 6 7 8 9 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 35 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 30 25 20 15 125oC 10 25oC 5 TA = -55oC 2.5 3 3.5 4 TA = 125oC 1 25o C 0.1 -55oC 0.01 0.001 0.0001 0 2 VGS = 0V 10 4.5 0 5 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDD3690 Typical Characteristics 2500 ID = 5.4 A VDS = 20V f = 1MHz VGS = 0 V 30V 8 2000 50 V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 1500 1000 500 0 CRSS 0 0 5 10 15 20 25 30 0 10 Qg, GATE CHARGE (nC) 30 40 50 Figure 8. Capacitance Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 100 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10 1 10s DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 0.01 TA = 25oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA = 96oC/W 40 TA = 25oC 30 20 10 0 0.01 1000 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) COSS Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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