FDD4141-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ General Description This P-Channel MOSFET has been produced using ON Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A „ High performance trench technology for extremely low rDS(on) „ Qualified to AEC Q101 Applications „ RoHS Compliant „ Inverter „ Power Supplies S D G G S D -P-2A52 K TO (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V -50 -58 (Note 1a) -Pulsed A -10.8 -100 Single Pulse Avalanche Energy EAS Ratings -40 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 337 mJ 69 (Note 1a) Operating and Storage Junction Temperature Range W 2.4 -55 to +175 °C Thermal Characteristics RθJC Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 52 °C/W Package Marking and Ordering Information Device Marking FDD4141 Device FDD4141-F085 ©2013 Semiconductor Components Industries, LLC. November-2018, Rev.4 Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 16mm Quantity 2500 units Publication Order Number: FDD4141-F085/D FDD4141-F085 P-Channel PowerTrench® MOSFET FDD4141-F085 Symbol Parameter Test Conditions Min Typ Max Units -40 - - V - mV/°C Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250μA, referenced to 25°C - -29 IDSS Zero Gate Voltage Drain Current VDS = -32V, VGS = 0V - - -1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -1 -1.8 -3 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250μA, referenced to 25°C - 5.8 - mV/°C VGS = -10V, ID = -12.7A - 10.1 12.3 VGS = -4.5V, ID = -10.4A - 14.5 18.0 VGS = -10V, ID = -12.7A, TJ = 175°C - 17.3 19.4 VDS = -5V, ID = -12.7A - 38 - S - 2085 2775 pF - 360 480 pF - 210 310 pF f = 1MHz - 4.6 - Ω - 10 19 ns VDD = -20V, ID = -12.7A, VGS = -10V, RGEN = 6Ω - 7 13 ns - 38 60 ns - 15 27 ns - 36 50 nC - 19 27 nC - 7 - nC - 8 - nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -12.7A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -12.7A (Note 2) IF = -12.7A, di/dt = 100A/μs - -0.8 -1.2 V - 29 44 ns - 26 40 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 52°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. www.onsemi.com 2 b) 100°C/W when mounted on a minimum pad. FDD4141-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 -ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 80 VGS = -4.5V VGS = -4V 60 VGS = -10V 40 VGS = -3.5V 20 VGS = -3V 0 0 1 2 3 4 3.5 3.0 VGS = -3.5V 2.5 VGS = -4V 2.0 1.5 VGS = -4.5V 1.0 VGS = -10V 0.5 0 5 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 ID = -12.7A VGS = -10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID =-12.7A 80 60 40 TJ = 175oC 20 200 2 10 100 80 VDD = -5V 60 40 TJ = 175oC 20 o TJ = 25 C 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 TJ = 25oC PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TJ = -55oC 0 1 80 0 Figure 3. Normalized On- Resistance vs Junction Temperature 100 40 60 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = -3V 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 VGS = 0 V 10 TJ = 175 oC 1 TJ = -55 oC 0.1 TJ = 25 oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDD4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -12.7A CAPACITANCE (pF) 8 VDD = -15V 6 VDD = -20V VDD = -10V 4 Ciss 1000 Coss 2 f = 1MHz VGS = 0V 100 0.1 0 0 8 16 24 32 Crss 40 1 40 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 -ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 200 STARTING TJ = 25oC 10 STARTING TJ = 150oC 50 40 VGS = -4.5V 30 Limited by Package 20 10 o RθJC = 1.8 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 100us 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 0.1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 P(PK), PEAK TRANSIENT POWER (W) 10000 1000 ID, DRAIN CURRENT (A) VGS = -10V VGS = -10V FOR TEMPERATURES o ABOVE 25SINGLE C DERATE PEAK PULSE o CURRENTRAS FOLLOWS: = 1.8 C/W θ JC 150 – T C -----------------------I = I25 125 1000 TC = 25oC 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area www.onsemi.com 4 2 10 3 10 FDD4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 1.8 C/W -4 10 -3 10 -2 10 -1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve www.onsemi.com 5 0 10 1 10 FDD4141-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com