FDD5614P

FDD5614P FDD5614P 60V P-Channel PowerTrench® MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V Applications • Fast switching speed • DC/DC converter • High performance trench technology for extremely RDS(ON) = 130 mΩ @ VGS = –4.5 V low RDS(ON) • Power management • Load switch • High power and current handling capability S D G G S TO-252 D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage –60 V VGSS Gate-Source Voltage ±20 V –15 –45 A W ID Parameter Drain Current – Continuous (Note 3) – Pulsed PD (Note 1a) Power Dissipation for Single Operation TJ, TSTG (Note 1) 42 (Note 1a) 3.8 (Note 1b) 1.6 Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5614P FDD5614P 13’’ 16mm 2500 units ©2005 Semiconductor Components Industries, LLC. October-2017, Rev.2 Publication Order Number: FDD5614P /D Symbol TA = 25°C unless otherwise noted Test Conditions Parameter Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = –30 V, ID = –4.5 A 90 mJ –4.5 A Off Characteristics VGS = 0 V, ID = –250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics V –60 ID = –250 µA, Referenced to 25°C –49 (Note 2) Gate Threshold Voltage VDS = VGS, ID = –250 µA Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4 RDS(on) Static Drain–Source On–Resistance 76 99 137 ID(on) On–State Drain Current VGS = –10 V, ID = –4.5 A ID = –3.9 A VGS = –4.5 V, VGS = –10 V,ID = –4.5 A,TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3 A VDS = –30 V, f = 1.0 MHz V GS = 0 V, VGS(th) ∆VGS(th) ∆TJ mV/°C –1 –1.6 –3 V mV/°C 100 130 185 –20 mΩ A 8 S 759 pF 90 pF 39 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) (Note 2) Turn–On Delay Time VDD = –30 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 7 14 ns ns tr Turn–On Rise Time 10 20 td(off) Turn–Off Delay Time 19 34 ns tf Turn–Off Fall Time 12 22 ns Qg Total Gate Charge 15 24 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –30V, VGS = –10 V ID = –4.5 A, nC 2.5 nC 3.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A www.onsemi.com 2 (Note 2) –0.8 –3.2 A –1.2 V FDD5614P Electrical Characteristics the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 2 1in pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% PD RDS( ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A www.onsemi.com 3 FDD5614P Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of FDD5614P Typical Characteristics 1.8 15 12 -4.5V -4.0V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = -10V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V -10V 1 0.8 0 0 1 2 3 4 0 5 2 4 Figure 1. On-Region Characteristics. 0.4 ID = -2.3 A ID = -4.5A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.3 0.2 TA = 125oC 0.1 TA = 25oC 0 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V TA = -55oC IS, REVERSE DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) o 25 C 12 125oC 9 6 3 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 0 1 2 3 4 5 0 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDD5614P Typical Characteristics 1000 f = 1MHz VGS = 0 V ID = -4.5A 8 800 -30V VDS = -40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 -20V 6 4 CISS 600 400 2 200 0 0 COSS CRSS 0 4 8 12 0 16 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics. 100 40 P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms RDS(ON) LIMIT 10 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RθJA = 96°C/W TA = 25°C 30 20 10 0 0.1 1 10 100 1 0.1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 96°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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