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N-Channel UniFETTM FRFET® MOSFET
500 V, 3.5 A, 1.55 Ω
Features
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• RDS(on) = 1.25Ω (Typ.) @ VGS = 10 V, ID = 1.75 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
•
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
S
G
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
- Continuous (TC = 25oC)
Units
V
±30
V
3.5
- Continuous (TC = 100oC)
- Pulsed
Ratings
500
A
2.1
(Note 1)
14
A
(Note 2)
257
mJ
IAR
Avalanche Current
(Note 1)
3.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
TL
- Derate Above 25oC
40
W
0.3
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case, Max.
1.4
RθJA
Thermal Resistance, Junction to Ambient, Max.
110
©2007 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
1
Units
oC/W
Publication Order Number:
FDD5N50FTM-WS/D
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
FDD5N50FTM-WS
Part Number
FDD5N50FTM-WS
Top Mark
FDD5N50F
Package
D-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.6
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
-
-
10
VDS = 400 V, TC = 125oC
-
-
100
VGS = ±30 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 1.75 A
-
1.25
1.55
Ω
gFS
Forward Transconductance
VDS = 20 V, ID = 1.75 A
-
4.3
-
S
VDS = 25 V, VGS = 0 V
f = 1 MHz
-
490
650
pF
-
66
88
pF
-
5
7.5
pF
-
11
15
nC
-
3
-
nC
-
5
-
nC
-
13
36
ns
-
22
54
ns
-
28
66
ns
-
20
50
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250 V, ID = 5 A
RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
3.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
14
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 3.5 A
-
-
1.5
V
trr
Reverse Recovery Time
-
65
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A
dIF/dt = 100 A/μs
-
0.120
-
μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 42 mH, IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 3.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
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2
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
Package Marking and Ordering Information
Figure 2. Transfer Characteristics
10
20
1
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
ID,Drain Current[A]
Figure 1. On-Region Characteristics
o
150 C
o
25 C
1
*Notes:
1. 250μs Pulse Test
0.1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.04
0.1
1
VDS,Drain-Source Voltage[V]
10
0.1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5
6
7
VGS,Gate-Source Voltage[V]
50
IS, Reverse Drain Current [A]
2.0
1.8
VGS = 10V
VGS = 20V
1.6
1.4
10
o
150 C
o
25 C
1
*Notes:
1. VGS = 0V
o
1.2
*Note: TJ = 25 C
0
4
8
12
ID, Drain Current [A]
16
20
0.2
0.0
2. 250μs Pulse Test
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
Ciss
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
750
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.2
RDS(ON) [Ω],
Drain-Source On-Resistance
4
*Note:
1. VGS = 0V
2. f = 1MHz
500
Coss
250
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
30
0
*Note: ID = 5A
0
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3
3
6
9
Qg, Total Gate Charge [nC]
12
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
30
40μs
10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
-25
25
75
125
o
TJ, Junction Temperature [ C]
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
100μs
o
0.01
175
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
3
2
1
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve
3
ZθJC(t), Thermal Response [oC/W]
Thermal Response [ZθJC]
ID, Drain Current [A]
4
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
*Notes:
0.01
t2
o
0.01
1. ZθJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.003
-5
10
-4
10
-3
-2
-1
0
10
10
10
10
t1Rectangular
, RectangularPulse
PulseDuration
Duration [sec]
[sec]
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4
1
10
2
10
1000
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics (Continued)
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
IG = const.
Figure 11. Gate Charge Test Circuit & Waveform
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
DUT
VGS
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 12. Resistive Switching Test Circuit & Waveforms
VGS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FDD5N50FTM-WS — N-Channel UniFETTM FRFET® MOSFET
DUT
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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