FDD6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDD6670AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDD6670AS
includes a patented combination of a MOSFET
monolithically integrated with a schottky diode. The
performance of the FDD6670AS as the low-side switch
in a synchronous rectifier is indistinguishable from the
performance of the FDD6670A in parallel with a
Schottky diode.
• 76 A, 30 V
RDS(ON) max= 8.0 mΩ @ VGS = 10 V
RDS(ON) max= 10.4 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (29nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
.
• Low side notebook
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
ID
Gate-Source Voltage
±20
V
Drain Current
(Note 3)
76
A
(Note 1a)
100
PD
Power Dissipation
– Continuous
– Pulsed
(Note 1)
70
(Note 1a)
3.2
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.3
–55 to +150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670AS
FDD6670AS
13’’
16mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDD6670AS Rev A(X)
FDD6670AS
May 2005
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ Max
Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID=14A
245
mJ
14
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 1 mA
ID = 10 mA, Referenced to 25°C
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
30
VDS = 24 V, VGS = 0 V
500
6.5
VDS = 24 V, VGS = 0 V, TJ= 125°C
On Characteristics
V
mV/°C
29
µA
mA
±100
nA
3
V
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS, ID = 1 mA
ID = 10 mA, Referenced to 25°C
1
1.8
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 13.8 A
ID = 11.7 A
VGS = 4.5 V,
VGS= 10 V, ID = 13.8A, TJ= 125°C
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 13.8 A
52
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1580
pF
440
pF
–3.3
6.8
8.3
9.3
mV/°C
8.0
10.4
11.6
50
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
170
pF
VGS = 15 mV, f = 1.0 MHz
1.8
Ω
VDS = 15 V,
VGS = 10 V,
10
20
ns
12
22
ns
28
45
ns
20
36
ns
15
27
ns
16
29
ns
(Note 2)
ID = 1 A,
RGEN = 6 Ω
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
13
23
ns
Qg(TOT)
Total Gate Charge at VGS=10V
29
40
nC
Qg(TOT)
Total Gate Charge at VGS=5V
16
22
Qgs
Gate–Source Charge
4.6
nC
Qgd
Gate–Drain Charge
5.5
nC
VDS = 15 V,
VGS = 4.5 V,
VDS = 15 V,
ID = 1 A,
RGEN = 6 Ω
ID = 13.8 A,
nC
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 2)
0.46
0.59
20
(Note 3)
15
(Note 2)
0.7
V
ns
nC
FDD6670AS Rev A (X)
FDD6670AS
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6670AS Rev A (X)
FDD6670AS
Electrical Characteristics
FDD6670AS
Typical Characteristics
2.6
100
4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
80
6.0V
4.5V
3.5V
60
40
3.0V
20
VGS = 3.0V
2.2
1.8
3.5V
1.4
4.0V
4.5V
6.0V
10V
1
2.5V
0
0.6
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
0
Figure 1. On-Region Characteristics.
80
100
0.025
ID = 64A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
ID = 32A
0.02
0.015
TA = 125oC
0.01
o
TA = 25 C
0.005
0.6
-50
-25
0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)
100
2
125
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
80
ID, DRAIN CURRENT (A)
20
60
o
TA = 125 C
-55oC
40
20
25oC
0
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
4.5
0
0.1
0.2
0.3
0.4
0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6670AS Rev A (W)
2400
ID =13.8A
f = 1MHz
VGS = 0 V
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
25
0
30
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
30
50
100µs
1ms
10ms
RDS(ON) LIMIT
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
0.1
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD6670AS Rev A (W)
FDD6670AS
Typical Characteristics (continued)
FDD6670AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
CURRENT : 0.8A/div
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6670AS.
0.1
125oC
0.01
100oC
0.001
0.0001
25oC
0.00001
0
10
20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDD6670AS SyncFET body diode
reverse recovery characteristic.
CURRENT : 0.8A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
FDD6670AS Rev A (W)
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
