FDD6685

FDD6685 30 V P-Channel POWERTRENCH) MOSFET General Description This P−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 2 5V). www.onsemi.com S Features • −40 A, −30 V G RDS(ON) = 20 mW @ VGS = –10 V ♦ RDS(ON) = 30 mW @ VGS = –4.5 V Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(ON) High Power and Current Handling Capability Qualified to AEC Q101 This Device is Pb−Free and are RoHS Compliant ♦ • • • • • D D G S DPAK3 (TO−252 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FDD 6685 $Y &Z &3 &K FDD6685 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 April, 2018 − Rev. 3 1 Publication Order Number: FDD6685/D FDD6685 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted) Symbol Ratings Units VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±25 V @TC = 25°C (Note 5) −40 A @TA = 25°C (Note 3a) −11 ID Parameter Continuous Drain Current −100 Pulsed, PW ≤ 100 ms (Note 3b) PD Power Dissipation for Single Operation TJ, TSTG (Note 3) 52 (Note 3a) 3.8 (Note 3b) 1.6 Operating and Storage Junction Temperature Range W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction−to−Case (Note 3) 2.9 _C/W RqJA Thermal Resistance, Junction−to−Ambient (Note 3a) 40 _C/W RqJA Thermal Resistance, Junction−to−Ambient (Note 3b) 96 _C/W 1. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ 2. All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. PACKAGE MARKING AND ORDERING INFORMATION Part Number Device Reel Size Tape Width Quantity FDD6685 FDD6685 13” 16 mm 2500 Units ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit DRAIN−SOURCE AVALANCHE RATINGS (NOTE 4) EAS Single Pulse Drain−Source Avalanche Energy IAS Maximum Drain−Source Avalanche Current ID = –11 A 42 mJ –11 A OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = –250 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 mA IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA –3 V –30 V mV/_C –24 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 mA DVGS(th) / DTJ Gate Threshold Voltage Temperature Coefficient ID = –250 mA, Referenced to 25°C 5 RDS(on) Static Drain–Source VGS = –10 V, ID = –11 A On–Resistance VGS = –4.5 V, ID = –9 A 14 21 20 VGS = –10 V, ID = –11 A, TJ = 125°C www.onsemi.com 2 –1 –1.8 mV/_C 20 30 mΩ FDD6685 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit ON CHARACTERISTICS ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –11 A –20 A 26 S 1715 pF 440 pF 225 pF 3.6 Ω DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = –15 V, VGS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz SWITCHING CHARACTERISTICS td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 17 31 ns 11 21 ns Turn–Off Delay Time 43 68 ns tf Turn–Off Fall Time 21 34 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge 9 nC Qgd Gate–Drain Charge 4 nC VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 W VDS = –15V, ID = –11 A, VGS = –5 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 4) Trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –11 A, diF/dt = 100 A/ms –0.8 –1.2 V 26 ns 13 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) RqJA = 40°C/W when mounted on 1in2 pad of 2 oz copper b) RqJA = 96°C/W when mounted on a minimum pad 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 5. Maximum current is calculated as: P Ǹ D R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10 V. 6. Starting TJ = 25°C, L = 0.69 mH, IAS = –11 A www.onsemi.com 3 FDD6685 TYPICAL CHARACTERISTICS V GS = −10 V −6.0 V ID, Drain Current [A] 2.4 −4.5 V −4.0 V Normalized Drain−Source ON−Resistance 40 −5.0 V 30 −3.5 V 20 10 −3.0 V 0 V GS = −3.5 V 2.2 2 1.8 −4.0 V 1.6 −4.5 V 1.4 −5.0 V −6.0 V 1.2 −8.0 V −10 V 1 0.8 0 1 2 3 0 2 4 −VDS, Drain-Source Voltage [V] 10 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage 0.08 1.6 I D = −11.0 A V GS = −10 V I D = −5.5A RDS(ON), On−Resistance [W] Normalized Drain−Source On−Resistance 8 −ID, Drain Current [A] Figure 1. On-Region Characteristics 1.4 1.2 1 0.8 0.6 −50 0.06 0.04 o T A = 125 C 0.02 o T A = 25 C 0 −25 0 25 50 75 100 125 150 2 175 4 TJ, Junction Temperature [5C] 6 8 10 −VGS, Gate to Source Voltage [V] Figure 3. On-Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage 40 100 T A = −55 oC V GS = 0 V o 125 C −IS, Reverse Drain Current [A] V DS = −5 V −ID, Drain Current [A] 6 30 o 25 C 20 10 0 10 T A = 125 oC 1 25oC 0.1 −55oC 0.01 0.001 0.0001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 −VGS, Gate to Source Voltage [V] −VSD, Body Diode Forward Voltage [V] Figure 5. Transfer Charactersistics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 4 FDD6685 TYPICAL CHARACTERISTICS (continued) 2400 ID = −11.0 A f = 1 MHz V GS = 0 V VDS = 10 V 8 Capacitance (pF) −VGS, Gate−Source Voltage [V] 10 30 V 6 20 V 4 1800 C iss 1200 C oss 600 2 C rss 0 0 0 5 10 15 20 25 0 30 5 Qg, Gate Charge [nC] 15 20 25 30 VDS, Drain TO Source Voltage [V] Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 100 100 1ms R DS(ON) LIMIT P(pk), Peak Transient Power [W] 1000 ID, Drain Current (A) 10 100μs 10ms 100ms 10 1 10s DC 1 V GS = 10V SINGLE PULSE 0.1 o R qJA = 96 C/W o T A = 25 C 0.01 0.01 0.10 1.00 10.00 SINGLE PULSE R qJA = 96°C/W T A = 25°C 80 60 40 20 0 0.01 100.00 0.1 1 10 100 VDS, Drain−Source Voltage [V] t1, Time [sec] Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Minimum Power Dissipation 1000 r(t), Normalized Effective Transient Thermal Resistance 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 96°C/W 0 .2 0.1 0 .1 0 .05 P (pk) 0 .02 t1 0 .01 t2 0.01 TJ −TA = P * RqJA (t) Duty Cycle, D = t 1/ t 2 S INGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1, Time [sec] Figure 11. Transient Thermal Response Curve NOTES: 7. Thermal characterization performed using the conditions described in Note 3b. 8. Transient thermal response will change depending on the circuit board design. POWERTRENCH registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13810G DPAK3 (TO−252 3 LD) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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