FDD6690A

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6690A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. • 46 A, 30 V Applications • Fast Switching Speed • DC/DC converter • High performance trench technology for extremely low RDS(ON) RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V • Low gate charge • Motor Drives D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 46 A @TA=25°C (Note 1a) 12 Pulsed (Note 1a) 100 PD Parameter Power Dissipation TJ, TSTG @TC=25°C (Note 3) 56 @TA=25°C (Note 1a) 3.3 @TA=25°C (Note 1b) W 1.5 –55 to +175 °C (Note 1) 2.7 °C/W (Note 1a) 45 (Note 1b) 96 Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6690A FDD6690A D-PAK (TO-252) 13’’ 16mm 2500 units 2003 Fairchild Semiconductor Corp. FDD6690A Rev. 2.1 FDD6690A March 2015 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID= 12A 180 mJ 12 A Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 1.9 –5 3 V mV/°C 7.7 9.9 11.4 12 14 19 mΩ On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 30 ID = 250 µA,Referenced to 25°C V 24 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 12 A,TJ=125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 12 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 50 A 47 S 1230 pF 325 pF 150 pF 1.5 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VGS = 15 mV, f = 1.0 MHz VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω (Note 2) VDS = 15V, VGS = 5 V ID = 12 A, 10 19 ns 7 13 ns 29 46 ns 12 21 ns 13 18 nC 3.5 nC 5.1 nC FDD6690A Rev. 2.1 FDD6690A Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 12 A, IS = 2.3 A (Note 2) diF/dt = 100 A/µs 2.3 0.76 1.2 A V 24 nS 13 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6690A Rev. 2.1 FDD6690A Electrical Characteristics FDD6690A Typical Characteristics 100 1.8 6.0V ID, DRAIN CURRENT (A) 80 4.5V 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10.0V 4.0V 60 3.5V 40 20 3.0V VGS = 3.5V 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10.0V 1 0.8 0 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 60 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.03 1.6 ID = 12A VGS = 10V ID = 6A RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.4 1.2 1 0.8 0.6 0.025 0.02 o TA = 125 C 0.015 TA = 25oC 0.01 0.005 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation withTemperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 90 VGS = 0V 75 IS, REVERSE DRAIN CURRENT (A) TA =-55oC VDS = 5V ID, DRAIN CURRENT (A) 20 3 o 125 C 60 25oC 45 30 15 100 o TA = 125 C 10 25oC 1 -55oC 0.1 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6690A Rev. 2.1 FDD6690A Typical Characteristics 10 1800 VGS, GATE-SOURCE VOLTAGE (V) ID = 12 A VDS = 10V 20V 1500 8 Ciss CAPACITANCE (pF) 15V 6 f = 1MHz VGS = 0 V 4 1200 900 600 Coss 2 300 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 100 100µs RDS(ON) LIMIT 100 P(pk), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) 5 1ms 10ms 10 100ms 1s 10 1 DC VGS = 4.5V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 0.1 1 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area 10 100 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 96 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) 0.01 t1 t2 0.001 0.0001 0.0001 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6690A Rev. 2.1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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