FDD6780A

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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ Features General Description „ Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A „ 100% UIL test „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G G D S S Short-Lead I-PAK (TO-251AA) D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID Ratings 25 Units V ±20 V TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C 30 48 (Note 1a) 16.4 -Pulsed EAS 100 Single Pulse Avalanche Energy PD TJ, TSTG A (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 24 32.6 (Note 1a) Operating and Storage Junction Temperature Range 3.7 -55 to +175 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252, TO-251 RθJA Thermal Resistance, Junction to Ambient TO-252 4.6 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD6780A Device FDD6780A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 1 www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 25 V 14 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -5 VGS = 10 V, ID = 16.4 A 6.8 8.6 VGS = 10 V, ID = 16.4 A Short-Lead I-PAK version 7.0 8.8 VGS = 4.5 V, ID = 12.2 A 14.1 19.0 VGS = 4.5 V, ID = 12.2 A Short-Lead I-PAK version 14.3 19.2 VGS = 10 V, ID = 16.4 A, TJ = 150 °C 10.3 13.0 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 VDS = 5 V, ID = 16.4 A 1.9 mV/°C 70 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz 927 1235 pF 197 265 pF 181 275 pF f = 1MHz 1.2 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 13 V, ID = 16.4 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 16.4 A 7 14 ns 3 10 ns 16 29 ns 3 10 ns 17 24 nC 9.2 13 nC 2.8 nC 4.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 VGS = 0 V, IS = 3.1 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 16.4 A (Note 2) 0.9 1.3 IF = 16.4 A, di/dt = 100 A/µs 2 V 15 27 ns 4 10 nC www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A. ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 3 www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 10 V ID, DRAIN CURRENT (A) 80 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 8 V 60 VGS = 6 V 40 VGS = 4.5 V 20 VGS = 4 V 0 0 0.5 1.0 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = 4 V 4 VGS = 4.5 V 3 VGS = 8 V 2 1 VGS = 10 V 0 2.0 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 25 ID = 16.4 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID = 16.4 A 20 15 TJ = 150 oC 10 TJ = 25 oC 5 75 100 125 150 175 4 6 TJ, JUNCTION TEMPERATURE ( C) o 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 80 VDS = 3 V 60 40 TJ = 175 oC TJ = 25 oC 20 TJ = -55 oC 0 0 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 6 V 1 2 3 4 5 6 10 TJ = 175 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 16.4 A 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 16 V 4 Ciss 1000 Coss 2 f = 1 MHz VGS = 0 V 0 3 6 9 12 15 18 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 30 TJ = 125 oC 10 TJ = 25 oC TJ = 150 oC 45 VGS = 10 V 30 Limited by Package 15 VGS = 4.5 V o RθJC = 4.6 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 150 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 100 P(PK), PEAK TRANSIENT POWER (W) 200 10 us 10 100 us THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms RθJC = 4.6 oC/W 100 ms DC TC = 25 oC 0.1 0.1 125 o Figure 9. Unclamped Inductive Switching Capability 1 100 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 100 0.1 0 1 10 70 VGS = 10 V SINGLE PULSE RθJC = 4.6 oC/W TC = 25 oC 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 1000 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 4.6 C/W 0.01 -5 10 -4 -3 10 -2 10 -1 10 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 o RθJA = 96 C/W (Note 1b) 0.003 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev. 1.2 6 www.fairchildsemi.com FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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