FDD6N50TF

UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G S G D-PAK I-PAK FDD Series FDU Series G D S S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FDD6N50/FDU6N50 Unit 500 V 6 3.8 A A 24 A ±30 V Single Pulsed Avalanche Energy (Note 2) 270 mJ Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 89 0.71 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 83 °C/W ©2006 Fairchild Semiconductor Corporation FDD6N50/FDU6N50 REV. A 1 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET January 2006 Device Marking Device Package Reel Size Tape Width Quantity FDD6N50 FDD6N50TM D-PAK 380mm 16mm 2500 FDD6N50 FDD6N50TF D-PAK 380mm 16mm 2000 FDU6N50 FDU6N50TU I-PAK - - 70 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.76 0.9 Ω -- 2.5 -- S -- 720 940 pF -- 95 190 pF -- 9 13.5 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3A gFS Forward Transconductance VDS = 40V, ID = 3A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) -- 6 20 ns -- 55 120 ns -- 25 60 ns -- 35 80 ns -- 12.8 16.6 nC -- 3.7 -- nC -- 5.8 -- nC 6 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V trr Reverse Recovery Time 275 -- ns Reverse Recovery Charge VGS = 0V, IS = 6A dIF/dt =100A/µs -- Qrr -- 1.7 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD6N50/FDU6N50 REV. A 2 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Top : ID, Drain Current [A] 15 Bottom : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 10 ID , Drain Current [A] 20 Figure 2. Transfer Characteristics 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 5 0 0 10 20 30 40 150∩ 0 10 25∩ -55∩ -1 10 ∝ Note 1. VDS = 40V 2. 250レs Pulse Test -2 50 10 2 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 IDR , Reverse Drain Current [A] RDS(ON) [ヘ ],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0.5 1 10 0 10 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test ∝ Note : TJ = 25∩ 0.0 -1 0 5 10 15 10 20 0.2 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz 10 10 1.4 1.6 1.8 VDS = 400V 8 6 4 2 ∝ Note : ID = 6A 0 5 10 15 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDD6N50/FDU6N50 REV. A 1.2 VDS = 250V 10 0 1 10 1.0 VDS = 100V Coss 0 0.8 12 Ciss 100 0.6 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.4 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 4 3 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 3 A 0.0 -100 200 -50 o TJ, Junction Temperature [ C] 2 50 100 150 200 o Figure 9. Maximum Safe Operating Area 10 0 TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 8 Operation in This Area is Limited by R DS(on) 6 100 us ID, Drain Current [A] ID, Drain Current [A] 10 us 1 10 1 ms 10 ms DC 0 10 ∝ Notes : -1 10 o 1. TC = 25 C 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [∩ ] Figure 11. Transient Thermal Response Curve Zヨ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 ∝ N o te s : 1 . Z ヨ J C(t) = 1 .4 ∩ /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z ヨ J C(t) 0 .1 10 -1 0 .0 5 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FDD6N50/FDU6N50 REV. A 4 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FDD6N50/FDU6N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A 5 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A 6 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD6N50/FDU6N50 REV. A 7 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Mechanical Dimensions (Continued) I-PAK Dimensions in Millimeters FDD6N50/FDU6N50 REV. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18