FDD6N50TM_F085

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Other names and brands may be claimed as the property of others. 500V N-Channel MOSFET Description Features These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Qualified to AEC Q101 • RoHS Compliant D D G S G D-PAK S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR Ratings Unit 500 V 6 3.8 A A 24 A ±30 V Single Pulsed Avalanche Energy (Note 2) 270 mJ Avalanche Current (Note 1) 6 A (Note 1) EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 89 0.71 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 83 °C/W ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FDD6N50TM-F085/D FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 Device Marking Device Reel Size Tape Width Quantity D-PAK 380mm 16mm 2500 FDD6N50TM-F085 FDD6N50 Electrical Characteristics Symbol Package TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.76 0.9 Ω -- 2.5 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3A gFS Forward Transconductance VDS = 40V, ID = 3A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 720 940 pF -- 95 190 pF -- 9 13.5 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) -- 6 20 ns -- 55 120 ns -- 25 60 ns -- 35 80 ns -- 12.8 16.6 nC -- 3.7 -- nC -- 5.8 -- nC -- -- 6 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V trr Reverse Recovery Time 275 -- ns Reverse Recovery Charge VGS = 0V, IS = 6A dIF/dt =100A/µs -- Qrr -- 1.7 -- µC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 (Note 4) FDD6N50TM-F085 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Top : ID, Drain Current [A] 15 Bottom : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 10 ID , Drain Current [A] 20 Figure 2. Transfer Characteristics 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 5 0 0 10 20 30 40 150∩ 0 10 25∩ -55∩ -1 10 ∝ Note 1. VDS = 40V 2. 250レs Pulse Test -2 50 10 2 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 IDR , Reverse Drain Current [A] RDS(ON) [ヘ ],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0.5 1 10 0 10 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test ∝ Note : TJ = 25∩ 0.0 -1 0 5 10 15 10 20 0.2 Figure 5. Capacitance Characteristics Coss Crss ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz 10 0 10 1.0 1.2 1.4 1.6 1.8 12 1 VDS = 100V VGS, Gate-Source Voltage [V] Ciss 100 0.8 0.6 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.4 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 4 VDS = 250V 10 VDS = 400V 8 6 4 2 ∝ Note : ID = 6A 0 10 0 5 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 15 FDD6N50TM-F085 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 3 A 0.0 -100 200 TJ, Junction Temperature [ C] 2 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 0 -50 o Figure 10. Maximum Drain Current vs. Case Temperature 8 Operation in This Area is Limited by R DS(on) 6 ID, Drain Current [A] 100 us 1 ms 10 ms DC 0 10 ∝ Notes : -1 10 o 1. TC = 25 C 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 TC, Case Temperature [∩ ] Figure 11. Transient Thermal Response Curve 10 Zヨ JC(t), Thermal Response ID, Drain Current [A] 10 us 1 10 0 D = 0 .5 0 .2 ∝ N o te s : 1 . Z ヨ J C(t) = 1 .4 ∩ /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z ヨ J C(t) 0 .1 10 -1 0 .0 5 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] www.onsemi.com 4 10 0 10 1 125 150 FDD6N50TM-F085 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FDD6N50TM-F085 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform www.onsemi.com 6 FDD6N50TM-F085 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDD6N50TM-F085 500V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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