FDD8444

FDD8444 ® N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications „ Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A „ Automotive Engine Control „ Typ Qg(10) = 89nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Transmission „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Distributed Power Architecture and VRMs „ Qualified to AEC Q101 „ Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE „ RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDD8444 Rev. 1. 1 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET March 2015 Symbol VDSS Drain to Source Voltage VGS Parameter Gate to Source Voltage Drain Current Continuous (VGS = 10V) ID (Note 1) PD Units V ±20 V 145 Continuous (VGS = 10V, with RθJA = 52oC/W) 20 Pulsed EAS Ratings 40 A Figure 4 Single Pulse Avalanche Energy (Note 2) 535 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC TJ, TSTG Operating and Storage Temperature -55 to +175 o 0.98 oC/W 52 oC/W C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case 2 Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444 Package TO-252AA Reel Size 13” Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.5 4 V ID = 50A, VGS= 10V - 4 5.2 ID = 50A, VGS= 10V, TJ = 175oC - 7.2 9.4 VDS = 25V, VGS = 0V, f = 1MHz - 6195 - pF - 585 - pF pF Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V VGS = 0V TJ = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 332 - RG Gate Resistance f = 1MHz - 1.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 89 116 nC nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDD8444 Rev. 1. 2 VDD = 20V ID = 50A Ig = 1.0mA 43 56 - 11 14.3 nC - 23 - nC - 11 - nC - 20 - nC www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 135 ns td(on) Turn-On Delay Time - 12 - ns tr Turn-On Rise Time - 78 - ns td(off) Turn-Off Delay Time - 48 - ns tf Turn-Off Fall Time - 15 - ns toff Turn-Off Time - - 95 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.0 VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, dIF/dt = 100A/μs V - 39 51 ns - 45 59 nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.67mH, IAS = 40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444 Rev. 1. 3 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 160 POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 VGS = 10V CURRENT LIMITED BY PACKAGE 140 120 0.8 100 0.6 0.4 0.2 0.0 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 -5 10 SINGLE PULSE -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 VGS = 10V IDM, PEAK CURRENT (A) 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD8444 Rev. 1. 4 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 500 10us IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 100 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 VDD = 5V TJ = 175oC 60 TJ = 25oC 40 TJ = -55oC 20 0 2.0 2.5 3.0 3.5 4.0 4.5 80 VGS = 4V 20 0 0.0 5.0 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 o 2 TJ = 25 C 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444 Rev. 1. 0.6 0.9 1.2 1.5 Figure 8. Saturation Characteristics TJ = 175oC 4 0.3 VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 12 VGS = 4.5V 40 Figure 7. Transfer Characteristics ID = 50A VGS = 5V 60 VGS, GATE TO SOURCE VOLTAGE (V) 14 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics 1.2 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.1 1.10 1.0 0.9 1.05 0.8 1.00 0.7 0.6 0.95 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 13. Capacitance vs Drain to Source Voltage FDD8444 Rev. 1. -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA 10 ID = 50A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8444 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I76 © Fairchild Semiconductor Corporation www.fairchildsemi.com