FDD8444L

FDD8444L tm ® N-Channel PowerTrench MOSFET 40V, 50A, 6.0mΩ Features Applications „ Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A „ Automotive Engine Control „ Typ Qg(tot) = 46nC at VGS = 5V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Transmission „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Distributed Power Architecture and VRMs „ Qualified to AEC Q101 „ Primary Switch for 12V and 24V systems A REE I DF M ENTATIO LE N MP LE „ RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDD8444L Rev A (W) 1 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET April 2007 Symbol VDSS Drain to Source Voltage VGS Parameter Gate to Source Voltage Drain Current Continuous (TC < 150°C, VGS = 10V) ID (Note 1) PD Units V ±20 V 50 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) 16 Pulsed EAS Ratings 40 A See Figure 4 Single Pulse Avalanche Energy (Note 2) 295 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case 2 Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 0.98 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD8444L Device FDD8444L Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 1 1.8 3 V ID = 50A, VGS= 10V - 3.5 5.2 ID = 50A, VGS= 5V - 3.8 6.0 ID = 50A, VGS= 4.5V - 4.0 6.5 ID = 50A, VGS= 5V, TJ = 175oC - 6.8 10.7 VDS = 25V, VGS = 0V, f = 1MHz - 5530 - pF - 605 - pF pF VDS = 32V, VGS = 0V TJ = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 400 - RG Gate Resistance f = 1MHz - 1.7 - Ω Qg(TOT) Total Gate Charge at 5V VGS = 0 to 5V - 46 60 nC VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge FDD8444L Rev A (W) 2 VDD = 20V ID = 50A Ig = 1.0mA - 5.4 7 nC - 16.3 - nC - 10.9 - nC - 21 - nC www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 104 ns td(on) Turn-On Delay Time - 18.7 - ns tr Turn-On Rise Time - 46 - ns td(off) Turn-Off Delay Time - 42 - ns tf Turn-Off Fall Time - 19.2 - ns toff Turn-Off Time - - 96 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.0 VDD = 20V, ID = 50A VGS = 5V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, dIF/dt = 100A/μs V - 34 44 ns - 29 38 nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444L Rev A (W) 3 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 140 1.0 120 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY PACKAGE 100 80 VGS = 5V 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC VGS = 10V 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 4000 IDM, PEAK CURRENT (A) VGS = 10V 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 100 10 -5 10 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 10 0 10 Figure 4. Peak Current Capability FDD8444L Rev A (W) 4 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 10us 100 100us 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE 10ms TJ = MAX RATED o TC = 25 C o STARTING TJ = 150 C 1 0.01 200 ID, DRAIN CURRENT (A) TJ = 175 C TJ = 25oC TJ = -55oC 20 0 0.5 1.0 1.5 2.0 2.5 3.0 10 100 VGS = 5V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 150 VGS = 3.5V VGS = 4V 100 50 VGS = 3V 0 3.5 VGS = 10V 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 30 ID = 50A 25 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 20 15 10 TJ = 175oC 5 0 TJ = 25oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444L Rev A (W) 1000 Figure 6. Unclamped Inductive Switching Capability o 40 1 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 60 0.1 tAV, TIME IN AVALANCHE (ms) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) o STARTING TJ = 25 C 100 Figure 5. Forward Bias Safe Operating Area 100 100 DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 5 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250μA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss Coss 1000 Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 13. Capacitance vs Drain to Source Voltage FDD8444L Rev A (W) 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 0.1 ID = 250uA 10 ID = 50A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 FDD8444L Rev A (W) 7 www.fairchildsemi.com FDD8444L N-Channel PowerTrench® MOSFET tm