FDD8444_F085

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Other names and brands may be claimed as the property of others. FDD8444-F085 N-Channel PowerTrench® MOSFET FDD8444-F085 ® N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features  Typ RDS(on) = 4m at VGS = 10V, ID = 50A  Typ Qg(10) = 89nC at VGS = 10V, ID = 50A D  Low Miller Charge  Low Qrr Body Diode  UIS Capability (Single Pulse/ Repetitive Pulse)  RoHS Compliant D G G  Qualified to AEC Q101 S Applications D-PAK TO-252 (TO-252) S  Automotive Engine Control  Powertrain Management  Solenoid and Motor Drivers  Electronic Transmission  Distributed Power Architecture and VRMs  Primary Switch for 12V Systems MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 50 Pulsed A Figure 4 Single Pulse Avalanche Energy (Note 1) 535 mJ Power Dissipation 153 W Derate above 25oC 1.02 W/oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance Junction to Case RJA Thermal Resistance Junction to Ambient, 1in2 copper pad area -55 to +175 oC 0.98 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444-F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Starting TJ = 25°C, L = 0.67mH, IAS = 40A 2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially in Aug 2014. announced ©2016 Semiconductor Components Industries, LLC. September-2017,Rev.2 Publication Order Number: FDD8444-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250A, VGS = 0V 40 - - V - - 1 - - 250 A VGS = ±20V - - ±100 nA VGS = VDS, ID = 250A 2 2.5 4 V ID = 50A, VGS= 10V - 4 5.2 ID = 50A, VGS= 10V TJ = 175oC - 7.2 9.4 VDS = 25V, VGS = 0V, f = 1MHz - 6195 - pF - 585 - pF pF VDS = 32V, VGS = 0V TA = 150oC On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 332 - RG Gate Resistance f = 1MHz - 1.9 -  Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 89 116 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V 11 - nC Qgs Gate to Source Gate Charge - 23 - nC Qgd Gate to Drain “Miller“ Charge - 20 - nC VDD = 20V ID = 50A Switching Characteristics ton Turn-On Time - - 135 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 78 - ns td(off) Turn-Off Delay Time - 48 - ns tf Fall Time - 15 - ns toff Turn-Off Time - - 95 ns VDD = 20V, ID = 50A VGS = 10V, RGS = 2 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 50A - - 1.25 ISD = 25A - - 1.0 ISD = 50A, dISD/dt = 100A/s www.onsemi.com 2 V - 39 51 ns - 45 59 nC FDD8444-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability www.onsemi.com 3 FDD8444-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 5. Forward Bias Safe Operating Area NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 4 FDD8444-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FDD8444-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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