FDD8453LZ_F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A General Description „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener haS „ Qualified to AEC Q101 been added to enhance ESD voltage level. „ HBM ESD protection level > 7kv typical Applications „ Inverter FDD8453LZ-F085 N-Channel Power Trench® MOSFET FDD8453LZ-F085 „ Synchronous Rectifier Symbol Package D D G G S D-PAK (TO-252) S ©2012 Semiconductor Components Industries, LLC. August-2017,Rev. 3 Publication Order Number: FDD8453LZ-F085/D Symbol VDSS Drain to Source Voltage VGS Gate to Source Voltage Drain Current ID Parameter - Continuous (Package limited) TC = 25°C PD Units V ±20 V 50 -Pulsed EAS Ratings 40 A Figure4 Single Pulse Avalanche Energy (Note 1) 88 mJ Power Dissipation 118 W Dreate above 25oC 0.79 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient, 1in2 copper pad area 1.27 o C/W 52 o C/W Package Marking and Ordering Information Device Marking FDD8453LZ Device FDD8453LZ-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V 40 - - - - 1 - - 250 - - ±10 μA uA On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA 1.0 1.8 3.0 V ID = 15A, VGS= 10V - 5.0 6.5 mΩ ID = 13A, VGS= 4.5V - 6.0 7.8 mΩ ID = 15A, VGS= 10V TJ=175oC - 9.4 12.2 mΩ VDS = 5V, ID = 15A - 91 - S VDS = 20V, VGS = 0V, f = 1MHz - 2935 - pF - 340 - pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 260 - Rg Gate Resistance f = 1MHz - 1.8 - Ω Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V - 60 78 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge www.onsemi.com 2 VDD = 20V ID = 15A Ig=1mA - 32 42 nC - 7.5 - nC - 13 - nC FDD8453LZ-F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 34 ns td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 10 - ns td(off) Turn-Off Delay Time - 43 - ns tf Fall Time - 7 - ns toff Turn-Off Time - - 80 ns ISD = 2A - 0.7 1.2 V ISD = 15A - 0.8 1.3 V VDD = 20V, ID = 15A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, dISD/dt = 100A/μs - 25 33 ns - 14 19 nC Notes: 1: Starting TJ = 25oC, L = 0.11mH, IAS = 40A, VDD = 36V during inductor charging and VDD = 0V during the time in Avalanche. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. www.onsemi.com 3 FDD8453LZ-F085 N-Channel Power Trench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 120 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 90 VGS = 10V 60 30 0 175 25 Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1E4 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDD8453LZ-F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 1 1ms 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10V TJ = 25oC TJ = 175 C 9 TJ = 25oC 4 6 8 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) o 6 VGS = 4.5V 25 VGS = 3V 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 2.2 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage VGS = 3.5V Figure 8. Saturation Characteristics PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 12 2 1000 50 0 0.0 5 15 3 100 VGS = 4V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 7. Transfer Characteristics 18 10 75 TJ = -55oC 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) ID = 15A 1 100 25 21 0.1 Figure 6. Unclamped Inductive Switching Capability TJ = 175oC 0 0.01 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 VDD = 5V 50 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 75 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 STARTING TJ = 25oC 1 0.001 100 Figure 5. Forward Bias Safe Operating Area 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID = 15A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDD8453LZ-F085 N-Channel Power Trench® MOSFET Typical Characteristics 1.15 VGS = VDS ID = 250μA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage 40 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) 10000 ID = 1mA 10 ID = 15A 8 VDD = 15V 6 VDD = 20V 4 VDD = 25V 2 0 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 60 70 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDD8453LZ-F085 N-Channel Power Trench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com