FDD850N10LD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Switching The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. • 100% Avalanche Tested Applications • Improved dv/dt Capability • LED Monitor Backlight • RoHS Compliant • LED TV Backlight • LED Lighting • Consumer Appliances, DC-DC converter (Step up & Step down) 3 3 1 2 4 5 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 4,5 1 TO252-5L 2 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) Unit V ±20 V 15.3 - Continuous (TC = 100oC) A 9.7 IDM Drain Current (Note 1) 46 A EAS Single Pulsed Avalanche Energy (Note 2) 41 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation PD - Pulsed FDD850N10LD 100 (TC = 25oC) - Derate Above 25oC 42 W 0.33 W/oC IF(AV) Diode Average Rectified Forward Current (TC = 138oC) 5 A IFSM Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave 50 A TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD850N10LD RθJC Thermal Resistance, Junction to Case for MOSFET, Max. 3.0 RθJC Thermal Resistance, Junction to Case for Diode, Max. 2.5 RθJA Thermal Resistance, Junction to Ambient, Max. 87 ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 1 Unit o C/W www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 Part Number FDD850N10LD Top Mark 850N10LD Package TO-252 5L Packing Method Tape and Reel Reel Size 13” Tape Width 16 mm Quantity 2500 units Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 125oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 nA VGS = VDS, ID = 250 μA V μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 - 2.5 VGS = 10 V, ID = 12 A - 61 75 VGS = 5 V, ID =12 A VDS = 10 V, ID = 15.3 A - 64 96 - 31 - - 1100 1465 pF - 80 105 pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qg(tot) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 80 V, ID = 15.3 A (Note 4) f = 1 MHz - 42 - pF - 22.2 28.9 nC - 12.3 16.0 nC - 3.0 - nC - 5.7 - nC - 1.75 - Ω - 17 44 ns - 21 52 ns - 27 64 ns - 8 26 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50 V, ID = 15.3 A, VGS = 5 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15.3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.3 V trr Reverse Recovery Time - 38 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 15.3 A, VDS = 80 V, dIF/dt = 100 A/μs - 50 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 2 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Package Marking and Ordering Information VR Symbol Parameter DC Blocking Voltage Test Conditions IR = 250 μA VFM Maximum Instantaneous Forward Voltage IF = 5 A IRM Maximum Instantaneous Reverse Current @ rated VR trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge WAVL Avalanche Energy (L = 40 mH) ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 TC = 25oC Max. - - - 2.5 - 0.9 - - - 50 TC = 125oC - - 1000 - 10.7 22 TC = 125oC - 14.5 - - 2.2 5 TC = 125oC - 3.4 - - 11.7 - TC = 125oC - 24.7 - 10 - - TC = 25oC TC = 25oC TC = 25oC 3 Typ. - TC = 125oC TC = 25oC IF = 5 A, dI/dt = 200 A/μs Min. 150 Unit V V uA ns A nC mJ www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Electrical Characteristics of the Diode TC = 25oC unless otherwise noted. Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 46 VGS = 15.0V 10.0V 6.0V 5.0V 3.5V 3.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 46 10 10 o 150 C o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 VGS, Gate-Source Voltage[V] 46 IS, Reverse Drain Current [A] 0.16 0.12 VGS = 5V 0.08 VGS = 10V 0.04 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 0.00 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 5000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 RDS(ON) [Ω], Drain-Source On-Resistance 0 Ciss Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 0.1 1 10 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss 0 100 4 *Note: ID = 15.3A 0 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10 V 2. ID = 12 A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 18 1 Operation in This Area is Limited by R DS(on) 0.1 ID, Drain Current [A] ID, Drain Current [A] 15 100μs 10 1ms 10ms 100ms DC *Notes: VGS = 10V 9 VGS = 5V 6 o 1. TC = 25 C 3 o 0.01 0.1 12 2. TJ = 150 C 3. Single Pulse o RθJC = 3.0 C/W 0 25 1 10 100 200 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 5 50 75 100 125 o TC, Case Temperature [ C] 150 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - MOSFET (Continued) Figure 11. Diode Forward Voltage Drop vs. Forward Current Figure 12. Diode Reverse Current vs. Reverse Voltage 5000 50 1000 10 Reverse Current , IR [nA] Forward Current, IF [A] o o TC = 125 C o TC = 75 C o TC = 25 C TC = 125 C 100 o TC = 75 C 10 1 o TC = 25 C 1 0.0 0.1 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 Figure 13. Diode Junction Capacitance 100 20 Reverse Recovery Time, trr [ns] Typical Capacitance at 0V = 183 pF 150 100 50 0 0.1 1 10 Reverse Voltage, VR [V] o TC = 125 C o TC = 75 C 10 o TC = 25 C 200 300 di/dt [A/μs] 400 500 Figure 16. Diode Forward Current Derating Curve 30 Average Forward Current, IF(AV) [A] 8 o TC = 125 C 6 o TC = 75 C 4 o TC = 25 C 2 0 100 120 IF = 5A 15 5 100 100 Figure 15. Diode Reverse Recovery Current vs. di/dt Reverse Recovery Current, Irr [A] 40 60 80 Reverse Voltage, VR [V] Figure 14. Diode Reverse Recovery Time vs. di/dt 200 Capacitances , Cj [pF] 10 20 IF = 5A 200 300 di/dt [A/μs] ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 400 25 20 15 10 5 0 25 500 6 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics - Diode (Continued) FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Typical Performance Characteristics (Continued) Figure 17. Transient Thermal Response Curve of MOSFET Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 4 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: Single pulse 0.01 -5 10 t2 o 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular t1, RectangularPulse PulseDuration Duration [sec] [sec] -1 10 1 Figure 18. Transient Thermal Response Curve of Diode θJC o ZThermal Response θJC(t), Thermal Response [Z [ ]C/W] 3 1 0.5 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: 0.01 -5 10 ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 t2 o Single pulse 1. ZθJC(t) = 2.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 7 -1 10 1 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) IG = const. Figure 19. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 20. Resistive Switching Test Circuit & Waveforms VGS Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 8 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 9 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) Mechanical Dimensions Figure 23. TO252 (D-PAK), Molded, 5-Lead, Option AD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005 ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 10 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 11 www.fairchildsemi.com FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com