FDD86250-F085

FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ Features „ Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A „ Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A „ UIS Capability D „ RoHS Compliant „ Qualified to AEC Q101 D G Applications „ Automotive Engine Control S „ PowerTrain Management „ Solenoid and Motor Drivers D-PAK TO-252 (TO-252) G „ Integrated Starter/Alternator S „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 150 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10V) (Note 2) TC = 25°C 50 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 3) A 80 mJ Power Dissipation 160 W Derate Above 25oC 1.06 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.94 oC/W 40 oC/W (Note 4) FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com Notes: 1: Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a dash. This is a notification. 2: Current is limited by bondwire configuration. 3: Starting TJ = 25°C, L = 0.1mH, IAS = 40A, VDD = 135V during inductor charging and VDD = 0V during time in avalanche. 4: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86250 Device FDD86250_F085 Package D-PAK(TO-252) Semiconductor Components Industries, LLC, 2017 September, 2017, Rev. 1 Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FDD86250_F085/D 1 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V 150 - - V - - 1 μA - - 1 mA - - ±100 nA VDS = 150V TJ = 25oC VGS = 0V TJ = 175oC (Note 5) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA 2 3 4 V ID = 20A, VGS= 10V - 19.4 22 mΩ - 56 62 mΩ TJ = 25oC TJ = 175oC (Note 5) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - Rg Gate Resistance f = 1MHz - Qg(ToT) Total Gate Charge VGS = 0 to 10V - 28 Qg(th) Threshold Gate Charge VGS = 0 to 2V - 4 - nC Qgs Gate-to-Source Gate Charge - 11 - nC Qgd Gate-to-Drain “Miller“ Charge - 7 - nC 64 ns VDS = 75V, VGS = 0V, f = 1MHz VDD = 120V ID = 40A - 1900 - pF - 169 - pF 10 - pF 0.5 - Ω 37 nC Switching Characteristics ton Turn-On Time - td(on) Turn-On Delay - 14 - ns tr Rise Time - 34 - ns td(off) Turn-Off Delay - 23 - ns tf Fall Time - 5 - ns toff Turn-Off Time - - 37 ns VDD = 75V, ID = 40A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 40A, VGS = 0V - 0.9 1.25 V ISD = 20A, VGS = 0V - 0.8 1.2 V VDD = 120V, IF = 40A, dISD/dt = 100A/μs - 91 137 ns - 237 355 nC Note: 5: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE VGS = 10V 40 30 20 10 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 1 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 1 10 FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 10 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.01 0.1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 C o TJ = -55 C 0 TJ = 175oC 2 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 60 1 10 100 10 TJ = 175 oC TJ = 25 oC 1 TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Forward Diode Characteristics 80 250μs PULSE WIDTH Tj=25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 0.1 VGS = 0 V 0.1 0.0 8 Figure 7. Transfer Characteristics 80 0.01 80 o 20 1 0.001 Figure 6. Unclamped Inductive Switching Capability VDD = 10V 40 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 60 STARTING TJ = 25oC 10 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 80 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 40 20 0 250μs PULSE WIDTH Tj=175oC VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 60 40 20 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 200 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX ID = 40A 150 100 TJ = 175oC 50 0 4 TJ = 25oC 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage ID = 40A VGS = 10V 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.00 ID = 5mA 1.05 0.75 1.00 0.95 0.50 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 100 Coss 10 f = 1MHz VGS = 0V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) 2.5 1.10 VGS = VDS ID = 250μA 1 0.1 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized RDSON vs. Junction Temperature 1.25 0.25 -80 3.0 Crss 1 10 100150 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage 10 ID = 40A VDD = 75V 8 VDD = 90V VDD =60V 6 4 2 0 0 5 10 15 20 Qg, GATE CHARGE(nC) 25 30 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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