FDD86367-F085

FDD86367-F085 N-Channel PowerTrench® MOSFET FDD86367-F085 N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ Features „ Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80 A D „ Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant D G „ Qualified to AEC Q101 Applications G S „ Automotive Engine Control D-PAK TO-252 (TO-252) „ PowerTrain Management S „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 100 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 82 A mJ Power Dissipation 227 W Derate Above 25oC 1.52 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.66 oC/W 52 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 40μH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86367 Device FDD86367-F085 ©2015 Semiconductor Components Industries, LLC. August-201, Rev. 2 Package D-PAK(TO-252) Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FDD86367-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V 80 - - V - - 1 μA - - 1 mA - - ±100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA 2 3 4 V ID = 80A, VGS= 10V - 3.3 4.2 mΩ - 6.6 8.4 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 40V, VGS = 0V, f = 1MHz VDD = 40V ID = 80A - 4840 - pF - 814 - pF - 31 - pF - 2.3 - Ω - 68 88 nC - 8.8 - nC - 22 - nC 14 - nC ns Switching Characteristics ton Turn-On Time - - 104 td(on) Turn-On Delay - 20 - ns tr Rise Time - 49 - ns td(off) Turn-Off Delay - 36 - ns tf Fall Time - 16 - ns toff Turn-Off Time - - 80 ns ISD = 80A, VGS = 0V - - 1.3 V ISD = 40A, VGS = 0V - - 1.2 V VDD = 64V, IF = 80A, dISD/dt = 100A/μs - 68 102 ns - 66 106 nC VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86367-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY SILICON 160 VGS = 10V CURRENT LIMITED BY PACKAGE 120 80 40 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, Zθ JC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDD86367-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.01 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 350 200 150 TJ = 175oC TJ = 25oC 50 T J = -55oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 1 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics TJ = 175 oC 10 TJ = 25 oC 1 0.1 0.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 0 1000 VGS = 0 V 100 350 VGS 50 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 8. Forward Diode Characteristics 200 100 10 VSD, BODY DIODE FORWARD VOLTAGE (V) 250 150 1 Figure 6. Unclamped Inductive Switching Capability 10 80μs PULSE WIDTH Tj=25oC 300 0.1 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 7. Transfer Characteristics 350 0.01 tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 250 100 STARTING TJ = 150oC 350 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 5V 300 STARTING TJ = 25oC 10 1 0.001 200 Figure 5. Forward Bias Safe Operating Area 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 80μ s PULSE WIDTH o 300 Tj=175 C 250 200 VGS 15V Top 10V 8V 7V 6V 5.5V 5.5V 5V Bottom 150 100 50 5 FDD86367-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 0 0 1 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 I D = 80A 40 30 TJ = 25o C 20 10 TJ = 175oC 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μ A 1.2 ID = 5mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 10000 Ciss 1000 Coss 100 C rss f = 1MHz VGS = 0V 10 0.1 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 2.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 15. Capacitance vs. Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature V GS, GATE TO SOURCE VOLTAGE(V) rDS(on) , DRAIN TO SOURCE ON-RESISTANCE (m Ω) 50 10 I D = 80A 8 VDD = 32V 40V 48V 6 4 2 0 0 20 40 60 Q g, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD86367-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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