FDD86367_F085

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) D 80 V, 100 A, 4.2 mW G FDD86367-F085 S Features • • • • • N−Channel Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A UIS Capability AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant S DPAK3 (TO−252 3 LD) CASE 369AS Applications • • • • • D G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems MARKING DIAGRAM $Y&Z&3&K FDD 86367 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Ratings Unit VDSS Drain−to−Source Voltage 80 V VGS Gate−to−Source Voltage ±20 V Drain Current − Continuous (VGS = 10) (Note 1) TC = 25°C 100 A ID Pulsed Drain Current Single Pulse Avalanche Energy (Note 2) 82 mJ PD Power Dissipation 227 W Derate Above 25°C 1.52 W/°C Operating and Storage Temperature RqJC Thermal Resistance, Junction to Case RqJA Maximum Thermal Resistance, Junction to Ambient (Note 3) = Specific Device Code = onsemi Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digits Lot Run Traceability Code ORDERING INFORMATION TC = 25°C See Figure 4 EAS TJ, TSTG FDD86367 $Y &Z &3 &K −55 to +175 °C 0.66 °C/W 52 °C/W See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 40 mH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche. 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. © Semiconductor Components Industries, LLC, 2015 October, 2021 − Rev. 3 1 Publication Order Number: FDD86367−F085/D FDD86367−F085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Shipping† FDD86367−F085 FDD86367 DPAK3 (TO−252 3 LD) (Pb−Free) 13” 16 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS IDSS IGSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V Drain−to−Source Leakage Current VDS = 80 V, VGS = 0 V TJ = 25°C − − 1 mA TJ = 175°C (Note 4) − − 1 mA VGS = ±20 V − − ±100 nA Gate−to−Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2 3 4 V RDS(on) Drain to Source On Resistance ID = 80 A, VGS= 10 V TJ = 25°C − 3.3 4.2 mW TJ = 175°C (Note 4) − 6.6 8.4 mW − 4840 − pF DYNAMIC CHARACTERISTICS VDS = 40 V, VGS = 0 V, f = 1 MHz Ciss Input Capacitance Coss Output Capacitance − 814 − pF Crss Reverse Transfer Capacitance − 31 − pF − 2.3 − W − 68 88 nC − 8.8 − nC − 22 − nC − 14 − nC − − 104 ns − 20 − ns Rise Time − 49 − ns Turn−Off Delay − 36 − ns Fall Time − 16 − ns Turn−Off Time − − 80 ns ISD = 80 A, VGS = 0 V − − 1.3 V ISD = 40 A, VGS = 0 V − − 1.2 V VDD = 64 V, IF = 80 A, dISD/dt = 100 A/ms − 68 102 ns − 66 106 nC Rg Gate Resistance VGS = 0.5 V, f = 1 MHz Total Gate Charge VGS = 0 to 10 V Threshold Gate Charge VGS = 0 to 2 V Qgs Gate−to−Source Gate Charge VDD = 40 V, ID = 80 A Qgd Gate−to−Drain “Miller“ Charge Qg(ToT) Qg(th) VDD = 40 V, ID = 80 A SWITCHING CHARACTERISTICS ton Turn−On Time td(on) Turn−On Delay tr td(off) tf toff VDD = 40 V, ID = 80 A, VGS = 10 V, RGEN = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage trr Reverse−Recovery Time Qrr Reverse−Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86367−F085 200 1.2 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 CURRENT LIMITED VGS = 10 V BY SILICON 160 CURRENT LIMITED BY PACKAGE 120 80 40 0 25 175 50 TC , CASE TEMPERATURE ( °C) 75 100 125 150 175 200 TC , CASE TEMPERATURE ( °C) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZqJC 2 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZqJA x RqJA + TC SINGLE PULSE 0.01 10−5 10−4 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 3. Normalized Maximum Transient Thermal Impedance IDM , PEAK CURRENT (A) 5000 TC = 25°C FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS: VGS = 10 V 1000 I + I2 ƪǸ 175 * T C 150 ƫ 100 SINGLE PULSE 10 10−5 10−4 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 3 100 101 FDD86367−F085 TYPICAL CHARACTERISTICS (continued) IAS , AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25°C 1 0.1 0.01 1 1 ms 10 ms 100 ms IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 150 TJ = 175°C TJ = 25°C 50 0 TJ = −55°C 2 4 6 8 STARTING TJ = 25°C 10 STARTING TJ = 150°C Figure 6. Unclamped Inductive Switching Capability 250 100 100 0.01 0.1 1 10 100 1000 t AV , TIME IN AVALANCHE (ms) NOTE: Refer to ON Application Notes AN7514 and AN7515 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDD = 5 V 300 10 350 10 TJ = 25°C 1 0.1 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 150 100 50 0 350 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 200 0 1 2 3 0.0 0.2 0.4 0.6 0.8 1.2 1.4 1.6 Figure 8. Forward Diode Characteristics 80 ms PULSE WIDTH Tj = 25°C 250 TJ = 175°C VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics 300 VGS = 0 V 100 VGS , GATE TO SOURCE VOLTAGE (V) 350 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1] 1 0.001 10 100 200 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 350 500 4 80 ms PULSE WIDTH Tj = 175°C 300 250 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 200 150 100 50 0 5 V DS , DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD86367−F085 r DS(on) , DRAIN TO SOURCE ON−RESISTANCE (mW) 50 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (continued) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX ID = 80 A 40 30 TJ = 25°C 20 10 TJ = 175°C 0 4 5 6 7 8 9 10 2.2 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.4 −80 VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 0.9 0.6 0.3 0.0 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (°C) 200 40 80 120 160 200 ID = 5 mA 1.05 1.00 0.95 0.90 −80 −40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (°C) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 Ciss CAPACITANCE (pF) 1.10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. Normalized Gate Threshold Voltage vs. Temperature 1000 Coss 100 Crss 10 0.1 0 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250 mA 1.2 −40 TJ , JUNCTION TEMPERATURE ( °C) Figure 11. RDSON vs. Gate Voltage 1.5 ID = 80 A VGS = 10 V 0.6 f = 1 MHz VGS = 0 V 1 10 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage 10 ID = 80 A 8 VDD = 32 V 40 V 48 V 6 4 2 0 0 20 40 60 Qg, GATE CHARGE (nC) 80 Figure 16. Gate Charge vs. Gate to Source Voltage POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (TO−252 3 LD) CASE 369AS ISSUE A DATE 28 SEP 2022 GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AYWWZZ XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 98AON13810G DPAK3 (TO−252 3 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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