FDD86569-F085

FDD86569-F085 N-Channel PowerTrench® MOSFET FDD86569-F085 N-Channel PowerTrench® MOSFET 60 V, 90 A, 5.7 mΩ D Features „ Typical RDS(on) = 4.2 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 A D G „ UIS Capability „ RoHS Compliant G S „ Qualified to AEC Q101 D-PAK TO-252 (TO-252) Applications S „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 90 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 41 A mJ Power Dissipation 150 W Derate Above 25oC 1.0 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 1.0 oC/W 52 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 15μH, IAS = 74A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86569 Device FDD86569-F085 ©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Package D-PAK(TO-252) 1 Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FDD86569-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 μA TJ = 25oC TJ = 175oC (Note 4) - - 1 mA - - ±100 nA VGS = VDS, ID = 250μA 2 2.8 4 V ID = 80A, VGS= 10V - 4.2 5.7 mΩ - 8.3 11.3 mΩ VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 30V, VGS = 0V, f = 1MHz VDD = 30V ID = 80A - 2520 - pF - 690 - pF - 47 - pF - 2.0 - Ω - 35 52 nC - 4.8 - nC - 14 - nC 7.4 - nC ns Switching Characteristics ton Turn-On Time - - 53 td(on) Turn-On Delay - 15 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay - 22 - ns tf Fall Time - 8 - ns toff Turn-Off Time - - 45 ns ISD = 80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V VDD = 48V, IF = 80A, dISD/dt = 100A/μs - 52 68 ns - 43 65 nC VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86569-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 150 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 120 CURRENT LIMITED BY PACKAGE 90 60 30 0 175 Figure 1. Normalized Power Dissipation vs. Case Temperature VGS = 10V CURRENT LIMITED BY SILICON 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC IDM, PEAK CURRENT (A) VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I25 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDD86569-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 1ms 10ms 100ms 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 200 150 TJ = -55oC TJ = 175oC o TJ = 25 C 100 50 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) 100 1000 VGS = 0 V 100 TJ = 175 oC 10 TJ = 25 oC 1 0.1 0.0 300 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 8. Forward Diode Characteristics 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 150 1 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS 200 0.1 Figure 6. Unclamped Inductive Switching Capability 11 80μs PULSE WIDTH Tj=25oC 250 0.01 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 7. Transfer Characteristics 300 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 5V STARTING TJ = 25oC 10 300 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 250 100 1 0.001 500 Figure 5. Forward Bias Safe Operating Area If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 50 80μs PULSE WIDTH Tj=175oC 250 200 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 150 100 50 5V 5V 0 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 5 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD86569-F085 N-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 ID = 80A 30 20 TJ = 175oC 10 0 5 TJ = 25oC 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 2.0 1.5 1.0 ID = 80A VGS = 10V 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μA 1.1 ID = 5mA 1.05 0.9 1.00 0.7 0.95 0.5 0.3 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss 1000 Coss 100 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 f = 1MHz VGS = 0V 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.3 2.5 10 ID = 80A VDD = 30V 8 VDD = 24V 6 VDD = 36V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE(nC) 35 40 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD86569-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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