FDD8778

FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 25V, 35A, 14mΩ Features General Description „ Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V „ Low gate resistance A Application REE I DF M ENTATIO LE N MP LE „ RoHS compliant „ DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D I-PAK G D S (TO-251AA) G S Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 40 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 145 24 mJ 39 W -55 to 175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.8 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8778 Device FDD8778 Package TO-252AA Reel Size 13’’ Tape Width 16mm Quantity 2500 units FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units FDU8778 FDU8778_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8778/FDU8778 Rev. 1.2 1 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 17.2 1 TJ = 150°C 250 µA ±10 µA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Drain to Source On Resistance 1.2 1.5 -5.3 mV/°C VGS = 10V, ID = 35A 11.6 14.0 VGS = 4.5V, ID = 33A 15.7 21.0 VGS = 10V, ID = 35A TJ = 175°C 18.2 23.8 635 845 pF 160 215 pF 108 162 pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz Ω f = 1MHz 1.3 VDD = 13V, ID = 35A VGS = 10V, RGS = 27Ω 6 12 ns 22 35 ns 43 69 ns 32 51 ns 12.6 18 nC 6.7 9.4 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 13V ID = 35A Ig = 1.0mA 2.1 nC 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 1.03 1.25 VGS = 0V, IS = 15A 0.89 1.2 IF = 35A, di/dt = 100A/µs 25 38 ns IF = 35A, di/dt = 100A/µs 17 26 nC V Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.1mH, IAS = 22A ,VDD = 23V, VGS = 10V. FDD8778/FDU8778 Rev. 1.2 2 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 70 4.0 ID, DRAIN CURRENT (A) 60 50 VGS = 10V 40 VGS = 5.0V VGS = 4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.0V 30 VGS = 3.5V 20 10 VGS = 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3.0V 3.0 VGS = 3.5V 2.5 1.5 1.0 0.5 3.5 VGS = 10V 0 10 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 50 ID = 35A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 3. Normalized On Resistance vs Junction Temperature ID = 35A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 30 TJ = 175oC 20 10 TJ = 25oC 0 3.0 10 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 70 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 60 VGS = 5V 20 30 40 50 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics VGS = 4.5V VGS = 4V 2.0 VDD = 5V 50 40 30 TJ = 175oC 20 TJ = 25oC 10 TJ = - 55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5.0 Figure 5. Transfer Characteristics FDD8778/FDU8778 Rev. 1.2 VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 8 1000 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 13V VDD = 10V 4 VDD = 16V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Coss Crss 100 40 0.1 15 Figure 7. Gate Charge Characteristics 50 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC TJ = 150oC VGS=10V 30 20 VGS=4.5V 10 o 1 1E-3 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 0 25 100 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10 VDS, DRAIN-SOURCE VOLTAGE (V) DC 50 Figure 11. Forward Bias Safe Operating Area FDD8778/FDU8778 Rev. 1.2 100 125 150 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us LIMITED BY PACKAGE 75 TC, CASE TEMPERATURE ( C) 10us 100 50 o 400 ID, DRAIN CURRENT (A) 40 RθJC = 3.8 C/W Figure 9. Unclamped Inductive Switching Capability 0.1 1 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 1 f = 1MHz VGS = 0V Ciss 5000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: I = I25 175 – T C ----------------------150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 -5 10 t1 t2 SINGLE PULSE -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8778/FDU8778 Rev. 1.2 5 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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