FDD9407L-F085

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Other names and brands may be claimed as the property of others. N-Channel Logic Level PowerTrench® MOSFET 40 V, 100 A, 1.7 mΩ D Features „ Typical RDS(on) = 1.4 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 A D G „ UIS Capability „ RoHS Compliant G S „ Qualified to AEC Q101 D-PAK TO-252 (TO-252) Applications S „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 100 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 128 A mJ Power Dissipation 227 W Derate Above 25oC 1.52 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.66 oC/W 52 oC/W (Note 3) FDD9407L-F085 N-Channel Logic Level PowerTrench® MOSFET FDD9407L-F085 Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 40μH, IAS = 80A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD9407L Device FDD9407L-F085 ©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Package D-PAK(TO-252) 1 Reel Size 13” Tape Width 16mm Quantity 2500units Publication Order Number: FDD9407L-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 μA TJ = 25oC TJ = 175oC (Note 4) - - 1 mA VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 1 1.8 3 V ID = 80A, VGS= 4.5V - 1.9 2.4 mΩ ID = 80A, VGS= 10V - 1.4 1.7 mΩ - 2.4 2.9 mΩ On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 32V ID = 80A - 6700 - pF - 1640 - pF - 68 - pF - 2.1 - Ω - 96 125 nC - 12 - nC - 18 - nC - 15 - nC ns Switching Characteristics ton Turn-On Time - - 68 td(on) Turn-On Delay - 17 - ns tr Rise Time - 35 - ns VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω td(off) Turn-Off Delay - 58 - ns tf Fall Time - 21 - ns toff Turn-Off Time - - 104 ns ISD = 80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V VDD = 32V, IF = 80A, dISD/dt = 100A/μs - 82 107 ns - 106 138 nC Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD9407L-F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY PACKAGE 200 150 100 50 0 175 Figure 1. Normalized Power Dissipation vs. Case Temperature CURRENT LIMITED BY SILICON 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 -5 10 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC VGS = 10V IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDD9407L-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 5. Forward Bias Safe Operating Area 250 150 TJ = 25oC 50 o TJ = -55 C TJ = 175oC 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 1 10 100 1000 10000 ID, DRAIN CURRENT (A) 0 Figure 9. Saturation Characteristics TJ = 25 oC TJ = 175 oC 1 250 3V 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 0.2 0.4 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics 10V Top 5V 4V 3.5V 3V Bottom 100 VGS = 0 V VSD, BODY DIODE FORWARD VOLTAGE (V) VGS 150 100 0.1 0.0 4.0 80μs PULSE WIDTH TJ = 25oC 0 0.1 Figure 6. Unclamped Inductive Switching Capability 250 50 0.01 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 7. Transfer Characteristics 200 STARTING TJ = 150 C tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 5V 100 o 250 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 200 STARTING TJ = 25oC 10 1 0.001 0.1 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 5 80μs PULSE WIDTH TJ = 175oC 200 VGS 10V Top 5V 4V 3.5V 3V Bottom 150 100 3V 50 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD9407L-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 ID = 80A 6 4 TJ = 175oC 2 o TJ = 25 C 0 1 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.4 0.95 0.2 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss Coss 1000 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 10 100 Figure 15. Capacitance vs. Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 1.6 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250μA 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.0 ID = 80A 8 VDD = 20V VDD = 24V 6 VDD = 16V 4 2 0 0 20 40 60 80 Qg, GATE CHARGE(nC) 100 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD9407L-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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