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FDD9407-F085 N-Channel Power Trench® MOSFET
FDD9407-F085
N-Channel Power Trench® MOSFET
40V, 100A, 2.0mΩ
D
Features
Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
D
G
Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A
UIS Capability
G
S
RoHS Compliant
Qualified to AEC Q101
Applications
D-PAK
TO-252
(TO-252)
S
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGS
ID
EAS
PD
Parameter
Gate to Source Voltage
Ratings
40
Units
V
±20
V
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
100
Pulsed Drain Current
TC = 25°C
See Figure4
Single Pulse Avalanche Energy
(Note 2)
171
A
mJ
Power Dissipation
227
W
Derate above 25oC
1.52
W/oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
-55 to + 175
oC
0.66
oC/W
52
oC/W
(Note 3)
Package Marking and Ordering Information
Device Marking
FDD9407
Device
FDD9407-F085
Package
D-PAK(TO-252)
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
©2013 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDD9407-F085/D
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 40V,
VGS = 0V
40
-
-
V
-
-
1
μA
TJ = 25oC
TJ = 175oC(Note 4)
-
-
1
mA
-
-
±100
nA
2.0
3.1
4.0
V
-
1.6
2
mΩ
-
2.64
3.22
mΩ
VGS = ±20V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 80A,
VGS= 10V
TJ = 25oC
TJ = 175oC(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 32V
ID = 80A
-
6390
-
pF
-
1580
-
pF
-
95
-
pF
-
2.3
-
Ω
-
86
112
nC
-
12
15.6
nC
-
30
-
nC
-
15
-
nC
Switching Characteristics
ton
Turn-On Time
-
-
120
ns
td(on)
Turn-On Delay Time
-
27
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
toff
-
48
-
ns
-
42
-
ns
Fall Time
-
18
-
ns
Turn-Off Time
-
-
97
ns
V
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/μs,
VDD=32V
-
58
88
ns
-
83
143
nC
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
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2
FDD9407-F085 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
300
1.0
250
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
VGS = 10V
CURRENT LIMITED
BY SILICON
200
150
100
50
0
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
CURRENT LIMITED
BY PACKAGE
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, PEAK CURRENT (A)
1000
VGS = 10V
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
175 - TC
I = I2
150
SINGLE PULSE
1
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
0
10
1
10
FDD9407-F085 N-Channel Power Trench® MOSFET
Typical Characteristics
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
0.1
1
1ms
10ms
100ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
250
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDD = 5V
TJ = 175oC
150
100
TJ = 25oC
TJ = -55oC
50
0
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
10
STARTING TJ = 150oC
300
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
1000
VGS = 0 V
100
TJ = 175 oC
TJ = 25 oC
10
1
0.0
7
Figure 7. Transfer Characteristics
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
250
250
200
150
5.5V
100
50
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
STARTING TJ = 25oC
Figure 6. Unclamped Inductive Switching
Capability
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
200
100
1
1E-3
100
Figure 5. Forward Bias Safe Operating Area
0
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1000
1000
VGS
15V Top
10V
8V
7V
6V
5.5V Bottom
80μs PULSE WIDTH
Tj=25oC
0
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
2
200
150
5.5V
100
50
0
0.0
VGS
15V5.5V
Top
10V
8V
7V
6V
5.5V Bottom
80μs PULSE WIDTH
Tj=175oC
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
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4
2.0
FDD9407-F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
24
18
TJ = 175oC
12
TJ = 25oC
6
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. Rdson vs Gate Voltage
1.4
1.2
1.0
ID = 80A
VGS = 10V
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
ID = 1mA
1.1
1.0
0.6
0.9
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Ciss
1000
Coss
100
f = 1MHz
VGS = 0V
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
-80
100
Figure 15. Capacitance vs Drain to Source
Voltage
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
10000
CAPACITANCE (pF)
1.6
1.2
VGS = VDS
ID = 250μA
0.8
10
0.1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
Figure 12. Normalized Rdson vs Junction
Temperature
1.0
0.4
-80
1.8
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
30
10
ID = 80A
8
VDD = 20V
6
4
2
0
0
20
40
60
80
Qg, GATE CHARGE(nC)
100
Figure 16. Gate Charge vs Gate to Source
Voltage
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5
FDD9407-F085 N-Channel Power Trench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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