MOSFET - P-Channel Logic
Level PowerTrench)
-40 V, 13.5 mW, -50 A
FDD9510L-F085
Features
•
•
•
•
•
Typ RDS(on) = 11 mW at VGS = −10 V; ID = −50 A
Typ Qg(tot) = 28 nC at VGS = −10 V; ID = −50 A
UIS Capability
Qualified to AEC Q101
These Devices are Pb−Free and are RoHS Compliant
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D
G
Applications
•
•
•
•
•
•
•
S
DPAK
TO−252
CASE 369AS
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electrical Power Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12 V Systems
D
G
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−40
V
Gate to Source Voltage
VGS
±16
V
Drain Current − Continuous
(VGS = −10 V) (TC = 25°C) (Note 1)
ID
−50
A
Pulsed Drain Current (TC = 25°C)
ID
See
Figure 4
A
Single Pulse Avalanche Energy (Note 2)
EAS
35.3
mJ
Power Dissipation
PD
75
W
Derate above 25°C
PD
0.5
W/°C
TJ, TSTG
−55 to
+175
°C
Operating and Storage Temperature
Range
Thermal Resistance (Junction to Case)
RqJC
2
°C/W
Maximum Thermal Resistance
(Junction to Ambient) (Note 3)
RqJA
52
°C/W
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by wirebond configuration
2. Starting Tj = 25°C, L = 40 mH, IAS = −42 A, VDD = −40 V during inductor
charging and VDD = 0 V during time in avalanche
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqJA
is determined by the user’s board design. The maximum rating presented
here is based on mounting on a 1 in2 pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2018
February, 2020 − Rev. 1
1
Publication Order Number:
FDD9510L−F085/D
FDD9510L−F085
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
FDD9510L−F085
FDD9510L
D−PAK (TO−252)
13″
16 mm
2500 Units
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−40
−
−
V
TJ = 25_C
−
−
−1
mA
TJ = 175_C (Note 4)
−
−
−1
mA
VGS = ±16 V
−
−
±100
nA
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
Drain to Source Leakage Current
VDS = −40 V,
VGS = 0 V
Gate to Source Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
−1
−1.9
−3
V
RDS(on)
Drain to Source On−Resistance
VGS = −4.5 V, ID = −50 A, TJ = 25_C
−
16
22
mW
VGS = −10 V,
ID = −50 A
TJ = 25_C
−
11
13.5
mW
TJ = 175_C (Note 4)
−
18
22.7
mW
−
2020
−
pF
DYNAMIC CHARACTERISTICS
VDS = −20 V, VGS = 0 V, f = 1 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
−
785
−
pF
Crss
Reverse Transfer Capacitance
−
36
−
pF
Rg
Gate Resistance
VGS = −0.5 V, f = 1 MHz
−
23
−
W
Qg(tot)
Total Gate Charge
VGS = 0 V to −10 V
−
28
37
nC
Qg(−4.5)
Total Gate Charge
VDD = −20 V,
ID = −50 A
VGS = 0 V to −4.5 V
−
13
−
nC
VGS = 0 V to −1 V
−
2
−
nC
−
7
−
nC
−
4
−
nC
−
−
44
ns
−
8
−
ns
Qg(th)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = −20 V, ID = −50 A
SWITCHING CHARACTERISTICS
ton
Turn-On Time
VDD = −20 V, ID = −50 A,
VGS = −10 V, RGEN = 6 W
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
−
21
−
ns
td(off)
Turn-Off Delay Time
−
113
−
ns
Turn-Off Fall Time
−
35
−
ns
Turn-Off Time
−
−
220
ns
VGS = 0 V, ISD = −50 A
−
−0.97
−1.25
V
VGS = 0 V, ISD = −25 A
−
−0.9
−1.2
V
IF = −50 A, dISD/dt = 100 A/ms
−
42
63
ns
−
31
56
nC
tf
toff
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production
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2
FDD9510L−F085
NORMALIZED THERMAL IMPEDANCE (ZqJC)
1.2
70
1.0
60
−ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
0
25
0
75
50
100
125
150
50
40
30
20
VGS = −10 V
10
0
175
Current Limited
by Package
25
50
75
125
100
150
175
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
0.2
PDM
0.1
0.1 0.05
t1
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
Peak TJ = PDM X ZqJA X RqJA + TC
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
1
0.1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25°C
For temperatures above 25°C
derate peak current as follows:
−IDM, PEAK CURRENT (A)
VGS = −10 V
ƪǸ
I + I 25
ƫ
175 * T C
150
100
Single Pulse
10
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
0.1
1
10
FDD9510L−F085
TYPICAL CHARACTERISTICS
100
Operation in this
Area may be Limited
by RDS(on)
0.1
1 ms
10 ms
100 ms
Single Pulse
TJ = Max Rated
TC = 25°C
1
10
TJ = 25°C
30
TJ = 175°C
2
TJ = −55°C
3
5
4
0.01
0.1
10
1
100
VGS = 0 V
10
1
0.1
TJ = 175°C
0.01
0.001
7
6
300
100
TJ = −55°C
TJ = 25°C
0
0.2
0.4
0.6
0.8
1.0
1.2
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
150
7.0 V
VGS = 10 V
5.0 V
100
4.5 V
4.0 V
50
3.5 V
Pulse Width = 250 ms
TJ = 25°C
0
0.001
Figure 6. Unclamped Inductive Switching
Capability
60
0
NOTE: Refer to ON Semiconductor
Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
VDD = −5 V
150
Starting TJ = 150°C
tAV, TIME IN AVALANCHE (mS)
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
90
0
If R = 0, tAV=(L)(IAS)/(1.3*Rated BVDSS− VDD)
If R ≠ 0, tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1]
Starting TJ = 25°C
1
100
−IS, REVERSE DRAIN CURRENT (A)
1
120
−ID, DRAIN CURRENT (A)
100 ms
Operation in this
Area may be Limited
by Package
10
0.1
−ID, DRAIN CURRENT (A)
−IAS, AVALANCHE CURRENT (A)
100
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
1000
1
2
3
4
5.0 V
100
4.5 V
4.0 V
50
0
5
7.0 V
VGS = 10 V
3.5 V
Pulse Width = 250 ms
TJ = 175°C
0
1
2
3
4
−VDS, DRAIN−SOURCE VOLTAGE (V)
−VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
5
FDD9510L−F085
TYPICAL CHARACTERISTICS
1.8
RDS(on), NORMALIZED DRAIN−
SOURCE ON−RESISTANCE
70
60
50
ID = −50 A
40
30
TJ = 175°C
20
TJ = 25°C
10
0
NORMALIZED GATE THRESHOLD VOLTAGE
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
3
6
5
4
7
8
9
1.2
1.0
VGS = −10 V
ID = −50 A
0.8
−40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. RDS(on) vs. Gate Voltage
Figure 12. Normalized RDS(on) vs. Junction
Temperature
200
1.10
VGS = VDS
ID = −250 mA
1.0
0.8
0.6
0.4
−80
−40
0
40
80
120
160
200
ID = −1 mA
1.05
1.00
0.95
0.90
−80
−40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
−VGS, GATE TO SOURCE VOLTAGE (V)
10,000
Ciss
CAPACITANCE (pF)
1.4
−VGS, GATE−TO−SOURCE VOLTAGE (V)
1.2
1000
Coss
100
Crss
10
VGS = 0 V
f = 1 MHz
1
1.6
0.6
−80
10
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
RDS(on), ON−RESISTANCE (mW)
80
0.1
1
40
10
10
ID = −50 A
8
VDD = −20 V
6
VDD = −16 V
VDD = −24 V
4
2
0
0
6
12
18
24
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC.
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5
30
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO−252 3 LD)
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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