FDDS100H06-F085

FDDS100H06_F085 Smart High Side Switch Features Description • Short circuit protection N channel power FET with charge pump, ground referenced CMOS compatible input and diagnostic output with integrated protective functions. • Current limitation • Thermal shutdown with restart. TO252-5L • Overvoltage protection(including load dump) • Very low standby current 3 • Under voltage and over voltage shutdown with auto-restart and hysteresis. 1 • Fast demagnetization of inductive loads 5 • Open load detection in ON-state • CMOS compatible input • ESD protection • Optimized static electromagnetic compatibility • Open drain fault output • Qualified to AEC Q100 Typical Applications • Power switch with diagnostic feedback for DC ground loads • All types of resistive, inductive, and capacitive loads Ordering Information • Replace electromechanical relays, fuses and discrete circuits Device Package FDDS100H06_F085 TO252- 5L ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 1 Operating Temp. -40 C ~ 150 C www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch September 2011 VBB Charge Pump Voltage Source Battery Voltage Sensor IN 4 SenseFET LoadCurrent Limiter LoadCurrent Sensor OUT 5 Temperature Sensor ESD & Overvoltage Protection ST Output Clamp&Gate Protection Gate Driver Undervoltage & Overvoltage 2 3 Control Logic Output Voltage Detection GND 1 Pin Definitions Pin Number Pin Name I/O Pin Function Description 1 GND P Ground 2 IN A Input, activates the power switch in case of logic high 3 Vbb P Supply voltage; Pin3 and TAB are internally shorted 4 ST A Fault signal feedback; low on failure 5 OUT A Output to loads ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 2 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Block Diagrams At Tj=25C unless otherwise specified. Parameter Supply voltage 1) Supply voltage for full short circuit protection Load dump protection VLoadDump = UA + VS, UA=13.5V RI=2, RL=12, td=400ms, IN=Low o r High Load current (Short-circuit current) 3) Symbol Values Unit Vbb 37 V Vbb 34 V VLoadDump 2) 60 V IL Self-limited V Tj Tstg -40 ~ 150 -55 ~ 150 C C Ptot 41.6 W Inductive load switch-off energy dissipation Single pulse, IL= 2.67A, L=100mH, Vbb=12V, Tj=150C EAS 0.425 J Electrostatic discharge capability (ESD) VESD 4 KV 2 KV Operating temperature range Storage temperature range Power Dissipation(DC) TC ≤25 °C 4) HBM (Human Body Model) CDM (Charged Device Model) Input Voltage (DC) VIN -0.5 .... + 5.4 V Current through input pin(DC) Current through status pin(DC) IIN IST +/-2 +/-5 mA Note: 1) See also on page 04. 2) VLoad dump is setup without the DUT connected to the generator. 3) See also diagram on page 05. 4) not subject to production test, specified by design. See also on page 10. ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 3 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Absolute Maximum Ratings At Tj=25C, Vbb=12V unless otherwise specified. Parameter Symbol Conditions RthJC RthJA (junction to case) Mini. footprint (junction to ambient) 1 Inch^2 device on PCB 1) Min. Typ. Max. Unit Theramal Characteristics Thermal resistance - 99 35 45 3 K/W Load Switching Capability and Characteristics On-state resistance(Pin3 to pin 5) RON VIN=5V, Vbb=12V, IL=2.5A Tj=25C VIN=5V, Vbb=12V, IL=2.5A Tj=150C - 80 160 100 200 m Nominal load current( tab to pin5) IL(NOM) SMD1) VON 5.5V ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 4 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Electrical Characteristics At Tj=25C, Vbb=12V unless otherwise specified Parameter Protection Functions Symbol Conditions Min. Typ. Max. Unit IL(SCP) Tj=-40C Tj=25C Tj=150C 9 7 4 - 4 - V td(SC) Tj=-40C ~ 150C Minimum Input low time : 60us 80 250 530 us VON(CL) IL=40mA Tj=-40C ~ 150C 50 56.5 63 V 150 170 - C - 10 - K - - 32 V - 480 mA 1) Short circuit current limit (pin3 to pin 5) VON > VON(SC) Short Circuit detection voltage Short Circuit shutdown delay time Output clamp(inductive load switch off) at VOUT= Vbb-VON(CL)(overvoltage) 2) Thermal overload trip temperature VON(SC) Tjt Thermal hysteresis Tjt Reverse battery voltage 3) -Vbb VIN =5V 15 12 7 24 19 10 A Diagnostic Characteristics Open load detection current IL(OL) VIN =5V,Tj=-40 ~ 150C 12 RI Tj=-40 ~ 150C 2.4 3.0 3.6 K VINH Tj=-40 ~ 150C - 2.2 2.9 V Input & Status Feedback 4) Input Resistance Input turn-on threshold voltage Input turn-off threshold voltage VINL Tj=-40 ~ 150C 1.2 - - V Off state input current IIN(OFF) VIN=0V, Tj=-40 ~ 150C - - 1 uA On state input current IIN(ON) VIN=3.5V, Tj=-40 ~ 150C 20 45 70 uA Initial open load delay time td(ST) Tj=-40 ~ 150C - 380 750 us Delay time for status with open load while ON 5) td(ON_OL) Normal --> Open load, Tj=-40 ~ 150C 10 30 90 us Delay time for status with open load while ON td(ON_Nor) Open load --> Normal, Tj=-40 ~ 150C 10 30 90 us Status output(open drain) for high level VSTH IST=1.6mA, Tj=-40 ~ 150C 5.4 6.3 Status output(open drain) for low level VSTL IST=1.6mA, Tj=-40 ~ 150C - V 0.6 V notes: 1) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2) See the page12 3) Requoired 150 resistor in GND PIN. Note that the power dissipation is higher compared to normal operation condition due to the voltage drop across the intrinsic drainsource diode. The temperature protection is not active during reversrse current operation. IN and ST currents have to be limitted by max rating. 4) If a ground resistor RGND is used, add the voltage drop across this resistor. 5) Guaranteed by design. ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 5 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Electrical Characteristics FDDS100H06_F085 Smart High Side Switch Application Information 1. Truth Table Sense current under fault conditions Output Level Status Normal operation Input Level L H L H H H Open load L H X1) H H L Short circuit to Vbb L H H H L 2) H (L 3) ) Short circuit to GND L H L L H L 4) Overtemperature L H L L L Undervoltage L H L L H H (L 5) ) Overvoltage shutdown L H L L H H L L = “ LOW “ Level, Z = High impedance, potential depends on external circuit, H = “HIGH” Level Notes: 1) Power TR off, high impedance. 2) An short of output to Vbb ,in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occure and VSTL signal may be errorious. 3) Low resistance to Vbb may be detected in ON-state by the no-load-detection. 4) Latched and reset by input. Low resistance to Vbb may be detected in ON-state by the no-load-detection. 5) Should reset IN to restart in case battery voltage comes back to normal operating range after undervoltage shutdown and status = “Low” level. 2.Terms Ibb IN VIN Vbb IST VON IIN V bb OUT ST IL GND VOUT VST IGND R GND Notes: ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 6 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch 3. Detailed Function Blocks 3.1 Input circuit (ESD protection) RI IN VZI1 VZI2 GND VZI1 = 16V (typ.), VZI2 = 6.1V (typ.). RI=3K. 3.2 Status output 5V IS T ST D Z ,S T GND VDZ,ST = 6.1V (typ.), Max 5mA. with IST =1.6mA. Low level of ST is 0.6(Max). 3.3 Inductive and overvoltage output clamp Vbb VZ1 VON OUT VON is clamped to VON(CL)=59V(Typ). 3.4 Overvoltage and reverse battery protection VBB VBB R IN RI IN ST R ST D Z,ST R IN Logic RI Logic ST V bb(AZ) V ZI1 IN R ST V ZI2 D Z,ST V bb(AZ) V ZI1 V ZI2 GND GND R GND Schottky Diode VDZ,ST =6.1V(Typ), VZI1 = 16V (typ.), VZI2 = 6.1V(Typ). RGND = 150 typ.Vbb(AZ) = 54V(typ). ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 7 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch 3. 5 Open load detection. V bb VON Detection Logic OUT Open load is detected when IN=H and VON < Ron * IL(OL). 3. 6 Short circuit detection. V bb VON Detection Logic OUT Short circuit is detected when VON > 4V.(Typ) and t > t(dSC), typically 250us. 3.7 Vbb disconnect with energized inductive load and GND disconnect IN IIN Vbb IST GND V bb OUT ST GND VST VIN ST Vbb Vbb OUT IN Schottky Diode Nominal load current can be handled by the device itself. 3.8 Inductive load switch-off energy dissipation E AS E Load IN Vbb V bb = iL(t) OUT ST EL GND L ZL ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 8 {R L ER www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Energy stored in load inductance: EL = 1  2  L  IL 2 While demagnetizing load inductance, the energy dissipated in MOSFET is E AS = E bb + E L – E R =  VON  CL   iL  t dt with an approximate solution for RL > 0 : IL  L IL  RL E AS = ---------------  V ON  CL   ln  1 + -----------------------------  2  RL V OUT  CL   ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 9 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch 3.9 Maximum allowable load inductance for a single switch off L=f(IL); Tj,start = 150C, Vbb=12V, RL = 0 1000 L [m H ] 100 10 1 0 .1 0 .0 1 ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 1 10 10 I_ L [A ] 100 www.fairchildsemi.com Ibb 6.8K 10K BAT ST 5.1 Zener 2K 5V MCU IN 2K OUT IL GND IGND Diag M RGND 150Ω Ibb 6.8K 10K BAT Vbb ST 5.1 Zener 2K IN 2K Vbb OUT IL GND IGND RGND 150Ω M SW1 ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 11 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Typical Application Circuit IN IIN t t td(bbIN) ST ST t t VOUT V OUT t t IL VBB t t Figure 2a. Switching motors and lamps Figure 1. Vbb turn-onSwitching a lamp IN IN t td(ST) ST ST t VOUT VOUT VON(CL) t d (S C ) t IL IL iL(OL) t Figure 2b. Switching an inductive load Figure 3. Turn-on into short circuit In case of VON > VON(SC)(typ.4V) the device will be switched off by internal short circuit detection ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 12 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch Timing Diagram IN td(ST) ST ST td(ON_OL) VOUT td(ON_Nor) VOUT IL IL Normal Figure 4a. Open load detection while being open Open Normal Figure 4b. Open load detection while turning-on IN IN ST ST VOUT VOUT VbIN(u cp) Vbb(u) Vb(u rst) Vbb(u) Vbb Vbb Vb(u rst) Figure 5b. Undervoltage restart of charge pump Figure 5a. Undervoltage ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 13 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch IN FDDS100H06_F085 Smart High Side Switch IN IN ST ST VOUT V OUT Vbb Tj VON(CL) Vbb(SD) Vbb(RE) Figure 6. Overvoltage ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 Figure 7. Over temperature 14 www.fairchildsemi.com FDDS100H06_F085 Smart High Side Switch ©2011 Fairchild Semiconductor Corporation FDDS100H06_F085 Rev. 1.0.0 15 www.fairchildsemi.com