FDFMA2P029Z

DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode MOSFET VDS MAX −20 V rDS(on) MAX ID MAX 95 mW @ −4.5 V −3.1 A 141 mW @ −2.5 V -20 V, -3.1 A, 95 mW SCHOTTKY DIODE FDFMA2P029Z, FDFMA2P029Z-F106 VRRM MAX VF MAX IO MAX 20 V 0.37 V @ 500 mA 2A General Description Pin 1 This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. C C NC D D S WDFN6 2x2, 0.65P MicroFET CASE 511DA Features MOSFET • Max rDS(on) = 95 mW at VGS = –4.5 V, ID = –3.1 A • Max rDS(on) = 141 mW at VGS = –2.5 V, ID = –2.5 A • HBM ESD Protection Level > 2.5 kV (Note 1) Schottky • VF < 0.37 V @ 500 mA • Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm • These Devices are Pb−Free and are RoHS Compliant G A MARKING DIAGRAM &Z&2&K P29 &Z &2 &K P29 = Assembly Plant Code = 2−Digit Date Code = 2−Digits Lot Run Traceability Code = Device Code NOTE: 1. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. PIN CONNECTIONS A 1 6 C NC 2 5 G D 3 4 S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2008 February, 2022 − Rev. 3 1 Publication Order Number: FDFMA2P029Z/D FDFMA2P029Z, FDFMA2P029Z−F106 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Ratings Unit VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±12 V –3.1 A ID PD Parameter Drain Current Continuous (Note 2a) Power Dissipation Pulsed −6 (Note 2a) 1.4 (Note 2b) TJ, TSTG VRRM IO W 0.7 Operating and Storage Junction Temperature Range –55 to +150 °C Schottky Repetitive Peak Reverse Voltage 20 V Schottky Average Forward Current 2 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit °C/W RqJA Thermal Resistance, Junction to Ambient (Note 2a) 86 RqJA Thermal Resistance, Junction to Ambient (Note 2b) 173 RqJA Thermal Resistance, Junction to Ambient (Note 2c) 86 RqJA Thermal Resistance, Junction to Ambient (Note 2d) 140 2. RqJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqJA is determined by the user’s board design. a. MOSFET RqJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. b. MOSFET RqJA = 173°C/W when mounted on a minimum pad of 2 oz copper. c. Schottky RqJA = 86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. d. Schottky RqJA = 140°C/W when mounted on a minimum pad of 2 oz copper. a. 86°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 173°C/W when mounted on a minimum pad of 2 oz copper. www.onsemi.com 2 c. 86°C/W when mounted on a 1 in2 pad of 2 oz copper. d. 140°C/W when mounted on a minimum pad of 2 oz copper. FDFMA2P029Z, FDFMA2P029Z−F106 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit –20 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = –250 mA, VGS = 0 V DBV DSS Breakdown Voltage Temperature Coefficient ID = –250 mA, referenced to 25°C − –12 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V − − –1 mA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V − − ±10 mA –0.6 –1.0 –1.5 V DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = –250 mA, referenced to 25°C − 4 − mV/°C Static Drain to Source On−Resistance VGS = –4.5 V, ID = –3.1 A − 60 95 mW VGS = –2.5 V, ID = –2.5 A − 88 141 VGS = –4.5 V, ID = –3.1 A, TJ = 125°C − 87 140 VDS = –10 V, ID = –3.1 A − –11 − S VDS = –10 V, VGS = 0 V, f = 1 MHz − 540 720 pF DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 120 160 pF Crss Reverse Transfer Capacitance − 100 150 pF − 13 24 ns − 11 20 ns Turn−Off Delay Time − 37 59 ns Fall Time − 36 58 ns − 7 10 nC − 1.1 − nC − 2.4 − nC Maximum Continuous Drain−Source Diode Forward Current − − –1.1 A Source to Drain Diode Forward Voltage VGS = 0 V, IS = –1.1 A (Note 3) − –0.8 –1.2 V trr Reverse Recovery Time IF = –3.1 A, di/dt = 100 A/ms − 25 − ns Qrr Reverse Recovery Charge − 9 − nC SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) Turn−On Delay Time Rise Time Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –10 V, ID = –1 A VGS = –4.5 V, RGEN = 6 W VDD = –10 V, ID = –3.1 A VGS = –4.5 V DRAIN−SOURCE DIODE CHARACTERISTICS IS VSD SCHOTTKY DIODE CHARACTERISTICS VR Reverse Voltage IR = 1 mA TJ = 25°C 20 − − V IR Reverse Leakage VR = 20 V TJ = 25°C − 30 300 mA TJ = 125°C − 10 45 mA TJ = 25°C − 0.32 0.37 V TJ = 125°C − 0.21 0.26 TJ = 25°C − 0.37 0.435 TJ = 125°C − 0.28 0.33 VF Forward Voltage IF = 500 mA IF = 1 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% www.onsemi.com 3 FDFMA2P029Z, FDFMA2P029Z−F106 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 2.6 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 5 VGS = −2.0 V 4 VGS = −4.5 V 3 VGS = −3.0 V 2 VGS = −2.5 V VGS = −1.5 V 1 0 0.0 0.5 1.0 1.5 VGS = −2.0 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE −ID, DRAI N CURRENT (A) 6 2.2 1.8 VGS = −3.5 V 1.4 VGS = −3.0 V 1.0 0.6 2.0 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 0 1 2 −VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 200 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 160 ID = −1.55 A TJ = 125°C 80 TJ = 25°C 150 0 VDD = −5 V TJ = 125°C 2 TJ = −55°C 1 0 0.0 TJ = 25°C 0.5 1.0 1.5 4 6 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX 3 2 −VGS, GATE TO SOURCE VOLTAGE (V) −IS, REVERSE DRAIN CURRENT (A) −ID, DRAI N CURRENT (A) 4 6 120 40 Figure 3. Normalized On−Resistance vs. Junction Temperature 5 5 PULSE DURATION = 300 ms DUTY CYCLE = 2.0% MAX TJ, JUNCTION TEMPERATURE (°C) 6 4 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = −3.1 A VGS = −4.5 V 1.4 3 VGS = −4.5 V −ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = −2.5 V 2.0 2.5 10 1 VGS = 0 V TJ = 125°C TJ = 25°C 0.1 0.01 TJ = −55°C 0.001 0.0001 0.0 −VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.4 FDFMA2P029Z, FDFMA2P029Z−F106 TYPICAL CHARACTERISTICS 10 1000 IDD = −3.1 A Ciss 8 CAPACITANCE (pF) −VGS, GATE TO SOURCE VOLTAGE (V) (TJ = 25°C unless otherwise noted) (continued) VDD = −5 V VDD = −15 V 6 VDD = −10 V 4 2 0 0 2 4 6 8 10 12 Coss 100 50 0.1 14 Qg, GATE CHARGE (nC) 1 ms 10 ms 0.01 0.1 100 ms 1s 10 s DC VGS = −4.5 V SINGLE PULSE RqJA = 173°C/W TA = 25°C 1 10 50 P(PK), PEAK TRANSIENT POWER (W) −ID, DRAI N CURRENT (A) 100 ms 0.1 60 40 30 20 SINGLE PULSE 10 0 −4 10 10 −3 IR, REVERSE LEAKAGE CURRENT (mA) IF, FORWARD CURRENT (A) 0.001 TJ = 125°C TJ = 85°C TJ = 25°C 0 200 400 600 −2 −1 0 10 10 10 1 2 10 10 3 Figure 10. Single Pulse Maximum Power Dissipation 10 0.01 10 t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operating Area 0.1 20 SINGLE PULSE RqJA = 173°C/W TA = 25°C −VDS, DRAIN TO SOURCE VOLTAGE (V) 1 10 Figure 8. Capacitance Characteristics rDS(on) LIMIT 1 1 −VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 20 10 Crss f = 1 MHz VGS = 0 V 100 1 TJ = 85°C 0.1 TJ = 25°C 0.01 0.001 800 TJ = 125°C 10 VF, FORWARD VOLTAGE (mV) 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) Figure 11. Schottky Diode Forward Voltage Figure 12. Schottky Diode Reverse Current www.onsemi.com 5 30 FDFMA2P029Z, FDFMA2P029Z−F106 TYPICAL CHARACTERISTICS ZqJA, NORMALIZED THERMAL IMPEDANCE (TJ = 25°C unless otherwise noted) (continued) 2 1 0.1 0.01 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x Z qJA x RqJA + TA SINGLE PULSE 0.005 −4 10 0 −3 −2 10 10 −1 0 10 10 1 2 10 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve PACKAGE MARKING AND ORDERING INFORMATION Device Marking Package Type Reel Size Tape Width Shipping† FDFMA2P029Z P29 WDFN6 2x2, 0.65P MicroFET (Pb−Free) 7” 8 mm 3000 / Tape & Reel FDFMA2P029Z−F106 P29 WDFN6 2x2, 0.65P MicroFET (Pb−Free) 7” 8 mm 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511DA ISSUE O 0.05 C 2.0 DATE 31 JUL 2016 A B 2X 1.80 1.72 2.0 0.80(2X) 0.21 1.00(2X) 1.41 0.05 C TOP VIEW 2.25 2X 0.42(6X) PIN#1 IDENT 0.42(6X) (0.10) 0.65 RECOMMENDED LAND PATTERN 0.75±0.05 0.10 C 0.20±0.05 0.08 C 0.025±0.025 SEATING PLANE C SIDE VIEW NOTES: A. CONFORM TO JADEC REGISTRATIONS MO−229, VARIATION VCCC, EXCEPT WHERE NOTED. 2.00±0.05 1.64±0.05 B. DIMENSIONS ARE IN MILLIMETERS. 0.645±0.05 0.350 (0.185)4X PIN#1 IDENT 0.275±0.05 1 3 C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. (6X) F. NON−JEDEC DUAL DAP 0.86±0.05 2.00±0.05 (0.57) F 6 4 0.33±0.05 (6X) 0.65 1.30 0.10 C A B 0.05 C BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13615G WDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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