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FDFS2P753Z
tm
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-30V, -3A, 115mΩ
Features
General Description
Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
VF < 500mV @ 1A
VF < 580mV @ 2A
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
Application
RoHS Compliant
DC - DC Conversion
D
D
C
5
4
G
D 6
3
S
C 7
2
A
C 8
1
A
D
C
SO-8
S
A
Pin 1
G
A
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
Ratings
-30
Units
V
±25
V
-3
-16
PD
Power Dissipation
EAS
Single Pulse Avalanche Energy
VRRM
Schottky Repetitive Peak Reverse Voltage
IO
Schottky Average Forward Current
TJ, TSTG
Operating and Storage Junction Temperature Range
A
(Note 1a)
1.6
W
(Note 2)
6
mJ
(Note 1a)
-20
V
-2
A
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
(Note 1a)
78
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDFS2P753Z
Device
FDFS2P753Z
©2006 Fairchild Semiconductor Corporation
FDFS2P753Z Rev.A
Package
SO-8
1
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
November 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-30
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
-21
VDS = -24V,
mV/°C
-1
VGS = 0V
TJ = 125°C
-100
VGS = ±25V, VDS = 0V
µA
±10
µA
-3
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
rDS(on)
gFS
Drain to Source On-Resistance
Forward Transconductance
-1
-2.1
5
mV/°C
VGS = -10V, ID = -3.0A
69
115
VGS = -4.5V, ID = -1.5A
115
180
VGS = -10V, ID = -3.0A, TJ =
125°C
97
162
VDS = -5V, ID = -3.0A
6
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -10V, VGS = 0V,
f = 1MHz
340
455
pF
80
110
pF
65
100
pF
Ω
f = 1MHz
18
VDD = -10V, ID = -3.0A
VGS = -10V, RGEN = 6Ω
7
14
ns
31
50
ns
18
33
ns
20
35
ns
6.6
9.3
nC
3.3
4.6
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at -10V
VGS = 0V to -10V
Qg(4.5)
Total Gate Charge at -4.5V
VGS = 0V to -4.5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10V
ID = -3.0A
nC
1.3
nC
1.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -2.0A
(Note 3)
IF = -3.0A, di/dt = 100A/µs
-0.9
-1.2
V
20
30
ns
14
21
nC
Schottky Diode Characteristics
IR
Reverse Leakage
VR = -20V
IF = 1A
VF
Forward Voltage
IF = 2A
FDFS2P753Z Rev.A
2
TJ = 25°C
-190
µA
TJ = 125°C
-66
mA
TJ = 25°C
0.5
TJ = 125°C
0.39
TJ = 25°C
0.58
TJ = 125°C
0.53
V
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25°C unless otherwise noted
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V
3: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDFS2P753Z Rev.A
3
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Notes:
-ID, DRAIN CURRENT (A)
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
VGS = -5V
8
VGS = -4.5V
VGS = -4V
4
VGS = -3.5V
0
0
1
2
3
4
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
16
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
3.0
VGS = 3.5V
VGS = -4.5V
1.5
1.0
0.5
VGS = -10V
0
4
8
12
-ID, DRAIN CURRENT(A)
16
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
450
1.6
ID = -3A
VGS = -10V
1.4
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
1.2
1.0
0.8
0.6
-75
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On-Resistance
vs Junction Temperature
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
TJ = 150oC
TJ = 25oC
8
4
TJ = -55oC
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics
FDFS2P753Z Rev.A
ID = -3A
400
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
350
300
250
TJ = 150oC
200
150
100
50
TJ = 25oC
3
4
5
6
7
8
9
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
16
-ID, DRAIN CURRENT (A)
VGS = -5V
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 4V
2.5
20
10
VGS = 0V
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
800
VDD = -5V
8
6
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = -10V
4
VDD = -15V
2
0
0
2
4
6
-Qg, GATE CHARGE(nC)
Ciss
f = 1MHz
VGS = 0V
20
0.1
8
Figure 7. Gate Charge Characteristics
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
3.5
-ID, DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT(A)
Crss
Figure 8. Capacitance vs Drain
to Source Voltage
4
3
TJ = 25oC
2
TJ = 125oC
1
0.01
0.1
tAV, TIME IN AVALANCHE(ms)
1
P(PK), PEAK TRANSIENT POWER (W)
1ms
10ms
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
100ms
1s
10s
DC
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
1.5
VGS = -4.5V
1.0
0.5
o
RθJA = 78 C/W
25
50
75
100
125
150
200
100
VGS = -10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
10
150 – T
A
----------------------125
TA = 25oC
1
0.6
-4
10
SINGLE PULSE
-3
10
-2
-1
0
1
2
10
10
10
10
t, PULSE WIDTH (s)
10
3
10
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
FDFS2P753Z Rev.A
2.0
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100us
0.1
VGS = -10V
o
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
2.5
TA, AMBIENT TEMPERATURE ( C)
30
1
3.0
0.0
Figure 9. Unclamped Inductive
Switching Capability
-ID, DRAIN CURRENT (A)
Coss
100
5
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
IR, REVERSE LEAKAGE CURRENT (mA)
IF, REVERSE LEAKAGE CURRENT (A)
30
10
1
TJ = 125oC
0.1
0.01
TJ = 25oC
1E-3
0.0
0.4
0.8
1.2
1.6
2.0
10
TJ = 125oC
1
0.1
0.01
TJ = 25oC
1E-3
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
VF, REVERSE VOLTAGE (V)
Figure 13. Schottky Diode Forward Voltage
Figure 14. Schottky Diode Reverse Current
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.005
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
FDFS2P753Z Rev.A
6
www.fairchildsemi.com
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ = 25°C unless otherwise noted
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I61
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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