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Final Datasheet
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
General Description
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A
The FDFS6N754 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO8 package.
Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance. The independently connected Schottky diode
allows its use in a variety of DC/DC converter topologies.
VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power
surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout
for design flexibility
Applications
DC/DC converters
Low Gate Charge (Qg = 4nC)
Low Miller Charge
D
D
C
C
SO-8
S
Pin 1
A
G
A
A 1
8 C
A 2
7 C
S 3
6 D
G 4
5 D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
Ratings
30
Units
V
±20
V
(Note 1a)
4
-Pulsed
Power Dissipation for Dual Operation
PD
A
20
2
Power Dissipation for Single Operation
VRRM
Schottky Repetitive Peak Reverse Voltage
IO
Schottky Average Forward Current
TJ, TSTG
Operating and Storage Temperature
(Note 1a)
W
1.6
30
(Note 1a)
V
2
A
-55 to 150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
FDFS6N754
Device
FDFS6N754
©2006 Fairchild Semiconductor Corporation
FDFS6N754 Rev. A1
Package
SO-8
Reel Size
330mm
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
August 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
30
V
24.5
mV/°C
1
TJ = 125°C
20
µA
±100
nA
2.5
V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 4A
42
56
Drain to Source On Resistance
VGS = 4.5V, ID =3.5A
53
75
VGS = 10V, ID = 4A,
TJ = 125°C
61
81
VDS = 5V, ID = 4A
10
rDS(on)
gFS
Forward Transconductance
1
1.7
-4.2
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1.0MHz
f = 1.0MHz
225
299
pF
80
107
pF
42
63
pF
Ω
5.1
Switching Characteristics (Note 2)
6
12
ns
8
16
ns
20
32
ns
2
10
ns
4
6
nC
2
3
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 10V
Qg(5)
Total Gate Charge at 5V
Qgs
Gate to Source Gate Charge
0.6
nC
Qgd
Gate to Drain “Miller” Charge
1
nC
VDD = 15V, ID = 1A
VGS = 10V, RGS = 6Ω
VDS = 15V,
ID = 4A
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A (Note 2)
0.8
1.2
V
trr
Reverse Recovery Time
IF = 4A, di/dt = 100A/µs
13
20
ns
Qrr
Reverse Recovery Charge
IF = 4A, di/dt = 100A/µs
4
6
nC
TJ = 25oC
39
250
µA
TJ = 25oC
225
Schottky Diode Characteristics
VR
IR
Reverse Breakdown Voltage
Reverse Leakage
IR = -1mA
VR = -10V
IF = 100mA
VF
Forward Voltage
IF = 2A
FDFS6N754 Rev. A1
2
-30
TJ = 125oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
V
18
mA
280
140
364
450
mV
290
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Electrical Characteristics TJ = 25°C unless otherwise noted
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDFS6N754 Rev. A1
3
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
3.0
VGS = 10V
VGS = 6V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
20
= 25°C unless otherwise noted
VGS = 4.5V
15 VGS = 5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 3.5V
10
VGS = 3V
5
VGS = 2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS = 3.0V
VGS = 5V
2.0
1.5
1.0
0.5
3.0
VGS = 10V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
4
1
8
rDS(on), DRAIN TO
1.0
0.8
0
30
60
90
120
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
0.20
1.2
-30
150
ID = 3A
0.10
TJ = 125oC
0.05
TJ = 25oC
0.00
2
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
12
0
TJ = 125oC
TJ = -55oC
TJ =
1
25oC
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics
FDFS6N754 Rev. A1
6
8
10
30
VDS = 5V
4
4
Figure 4. On-Resistance vs Gate to Source
Voltage
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
8
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On Resistance vs Temperature
16
20
0.15
TJ, JUNCTION TEMPERATURE (oC)
20
16
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
ID = 4A
VGS = 10V
0.6
-60
12
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
1.4
VGS = 6V
VGS = 3.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
VGS = 4.5V
2.5
10
1
VGS = 0V
TJ = 125oC
TJ = 25oC
0.1
0.01
1E-3
0.2
TJ = -55oC
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
4
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ
500
10
8
VDD = 10V
6
VDD = 20V
4
VDD = 15V
2
0
0
1
2
3
4
Coss
100
Crss
20
0.1
5
Qg, GATE CHARGE (nC)
10
9
8
7
6
5
6
4
TJ = 25oC
3
2
1
0.01
0.1
1
tAV, TIME IN AVALANCHE(ms)
P(PK), PEAK TRANSIENT POWER (W)
100us
1ms
10ms
100ms
0.1
OPERATION IN THIS SINGLE PULSE
TJ = MAX RATED
AREA MAY BE
LIMITED BY rDS(on) TA = 25OC
1
10
1s
10s
DC
80
3
VGS = 4.5V
2
1
o
RθJC = 40 C/W
50
75
100
125
150
100
Figure 11. Forward Bias Safe Operating Area
TA = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
10
150 – T A
-----------------------125
SINGLE PULSE
1
-4
10
VDS, DRAIN-SOURCE VOLTAGE (V)
FDFS6N754 Rev. A1
VGS = 10V
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
10us
1
4
TC, CASE TEMPERATURE (oC)
100
10
5
0
25
2
Figure 9. Unclamped Inductive Switching
Capability
0.01
0.1
40
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0V
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
= 25°C unless otherwise noted
-3
10
-2
-1
0
10
10
10
t, PULSE WIDTH (s)
1
10
2
10
3
10
Figure 12. Single Pulse Maximum Power
Dissipation
5
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ
100
10
IR, REVERSE LEAKAGE CURRENT (A)
IF, FORWARD LEAKAGE CURRENT (A)
= 25°C unless otherwise noted
TJ = 125oC
1
TJ = 25oC
0.1
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (V)
1.2
Figure 13. Schottky Diode Forward Voltage
2
0.1
TJ = 125oC
0.01
1E-3
1E-4
TJ = 25oC
1E-5
20
1E-6
0
5
10
15
20
25
VR, REVERSE VOLATGE(V)
30
Figure 14. Schottky Diode Reverse Current
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
-4
10
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
FDFS6N754 Rev. A1
6
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
Typical Characteristics TJ
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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