FDG312P

FDG312P FDG312P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Battery protection • Power management D • -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. • Low gate charge (3.3 nC typical). • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package. S 1 6 2 5 3 4 D SC70-6 D D G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current (Note 1) ±8 -1.2 -6 A PD Power Dissipation for Single Operation W TJ, Tstg - Continuous - Pulsed (Note 1a) 0.75 (Note 1b) 0.55 (Note 1c) 0.48 Operating and Storage Junction Temperature Range -55 to +150 °C 260 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Outlines and Ordering Information Device Marking .12 Device Reel Size Tape Width Quantity FDG312P 7’’ 8mm 3000 units 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDG312P/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics -20 V mV/°C -19 -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C 2.5 0.135 0.200 0.187 ID(on) On-State Drain Current VGS = -4.5 V, ID = -1.2 A VGS = -4.5 V, ID = -1.2 A @125°C VGS = -2.5 V, ID = -1 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -1.2 A 3.8 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 330 pF 80 pF 35 pF -0.4 -0.9 -1.5 V mV/°C 0.18 0.29 0.25 -3 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω 7 15 ns 12 22 ns Turn-Off Delay Time 16 26 ns Turn-Off Fall Time 5 12 ns 3.3 5 nC VDS = -10 V, ID = -1.2 A, VGS = -4.5 V 0.8 nC 0.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A (Note 2) -0.83 -0.6 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 170°C/W when mounted on a 1 in2 pad of 2oz copper. b) 225°C/W when mounted on a half of package sized 2oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 260°C/W when mounted on a minimum pad of 2oz copper. FDG312P DMOS Electrical Characteristics FDG312P Typical Characteristics 5 R DS(on), NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) V GS= -4.5V -3.5V -3.0V -2.5V 4 3 -2.0V 2 1 -1.5V DRAIN-SOURCE ON-RESISTANCE 2.4 6 2.2 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 0 1 2 -V DS 3 3 4 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 R DS(ON) , ON-RESISTANCE (OHM) I D = -1.2A V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -0.6A 0.4 0.3 TJ = 125°C 0.2 0.1 TJ = 25°C 0 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TJ = -55°C -I D , DRAIN CURRENT (A) V DS = -5V 3 - I S , REVERSE DRAIN CURRENT (A) 4 25°C 125°C 2 1 0 0.5 2 - I D , DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V) 1.6 DRAIN-SOURCE ON-RESISTANCE 1 4 Figure 1. On-Region Characteristics. R DS(ON), NORMALIZED VGS = -2.0V 2 1.8 1 1.5 2 2.5 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 (continued) 5 1000 I D = -1.2A VDS = -5V 4 -10V CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) FDG312P Typical Characteristics -15V 3 2 Ciss 300 100 Coss Crss 30 1 f = 1 MHz VGS = 0 V 0 0 1 2 3 10 0.1 4 0.2 Q g , GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. 5 1 L N) 10 20 IT IM o 10 0m s 1s 10s DC V GS = -4.5V SINGLE PULSE R θJA = 260°C/W T A = 25°C 0.2 0.5 RθJA= 260 C/W 24 10m s 0.3 0.01 0.1 SINGLE PULSE 1m s POWER (W) O S( RD o TA= 25 C 18 12 6 1 2 5 10 20 0 50 0.0001 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 SINGLE PULS E TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 2 30 3 0.03 1 Figure 8. Capacitance Characteristics. 10 0.1 0.5 -VDS , DRAIN TO SOURCE VOLTAGE (V) 0.5 D = 0.5 R θJA (t) = r(t) * R θJA R JA =260°C/W 0.2 θ 0.1 0.05 0.1 P(pk) 0.05 0.01 t1 0.02 Single Pulse 0.01 0.005 0.0001 0.001 t2 TJ - TA = P * R θJA (t) 0.01 0.1 1 Duty Cycle, D = t 1 / t 2 10 100 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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