FDG332PZ

FDG332PZ tm P-Channel PowerTrench® MOSFET -20V, -2.6A, 97mΩ Features General Description „ Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications. „ Max rDS(on) = 115mΩ at VGS = -2.5V, ID = -2.2A „ Max rDS(on) = 160mΩ at VGS = -1.8V, ID = -1.9A „ Max rDS(on) = 330mΩ at VGS = -1.5V, ID = -1.0A Applications „ Very low level gate drive requirements allowing operation in 1.5V circuits „ Battery management „ Load switch „ Very small package outline SC70-6 „ RoHS Compliant S D D D D D G S D G D D SC70-6 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TJ, TSTG Units V ±8 V -2.6 -Pulsed PD Ratings -20 -9 Power Dissipation (Note 1a) 0.75 Power Dissipation (Note 1b) 0.48 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 170 RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .32 Device FDG332PZ ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B Package SC70-6 1 Reel Size 7’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET July 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -20 ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±8V, VDS= 0V V -13 mV/°C -1 µA ±10 µA -1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 2.5 VGS = -4.5V, ID = -2.6A 73 95 VGS = -2.5V, ID = -2.2A 90 115 VGS = -1.8V, ID = -1.9A 117 160 VGS = -1.5V, ID = -1.0A 147 330 VGS = -4.5V, ID = -2.6A , TJ = 125°C 100 133 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 VDD = -5V, ID = -2.6A -0.7 mV/°C 9 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHZ 420 560 pF 85 115 pF 75 115 pF 5.2 10 ns 4.8 10 ns 59 95 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 28 45 ns Qg Total Gate Charge 7.6 10.8 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10V, ID = -2.6A, VGS = -4.5V, RGEN = 6Ω VGS = -4.5V, VDD = -10V, ID = -2.6A 0.9 nC 1.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -0.6A IF = 2.6A, di/dt = 100A/µs -0.6 (Note 2) A -0.7 -1.2 V 28 45 ns 8 13 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 170°C/W when mounted on a 1 in2 pad of 2 oz copper . b. 260°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 2 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 9 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 VGS = -4.5V VGS = -3V VGS = -2.5V 6 VGS = -1.8V 3 VGS = -1.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS = -1.5V 2.0 VGS = -1.8V 1.5 VGS = -2.5V 1.0 0.5 0 3 Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 ID = -2.6A VGS = -4.5V -25 200 TJ = 125oC 150 100 TJ = 25oC 1 2 3 4 5 Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 250 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -VGS, GATE TO SOURCE VOLTAGE (V) 9 VDD = -5V 3 TJ = 150oC 0 0.0 ID = -2.6A 50 150 Figure 3. Normalized On - Resistance vs Junction Temperature 6 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -50 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -4.5V VGS = -3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 25oC TJ = -55oC 0.5 1.0 1.5 2.0 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B VGS = 0V 1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 Ciss ID = -2.6A VDD = -5V 3.0 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 4.5 VDD = -10V VDD = -15V 1.5 Coss 100 0.0 0 2 4 6 30 0.1 8 1 20 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 5 10 10 100us -Ig, GATE LEAKAGE CURRENT(uA) -ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s DC RθJA = 260oC/W TA = 25oC 0.01 0.1 1 4 3 10 2 10 50 TJ = 150oC 1 10 0 10 -1 10 TJ = 25oC -2 10 -3 10 -4 10 10 VGS = 0V 10 0 5 10 15 20 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 P(PK), PEAK TRANSIENT POWER (W) VGS = -4.5V 10 SINGLE PULSE o RθJA = 260 C/W o TA = 25 C 1 0.1 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B Transient Thermal Response Curve 4 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE o RθJA = 260 C/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 5 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourseSM Green FPS™ Green FPS™ e-Series™ GOT™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFEET™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDG332PZ P-Channel PowerTrench® MOSFET tm