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September 2001
FDG6303N
Dual N-Channel, Digital FET
General Description
Features
25 V, 0.50 A continuous, 1.5 A peak.
RDS(ON) = 0.45 Ω @ VGS= 4.5 V,
RDS(ON) =0.60 Ω @ VGS= 2.7 V.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
SC70-6
SuperSOTTM -6
SOT-23
D1
G2
SO-8
SuperSOTTM -8
S2
SOT-223
1 or 4 *
6 or 3
2 or 5
5 or 2
3 or 6
4 or 1
.03
S1
SC70-6
G1
D2
*
* The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
FDG6303N
Units
25
V
- 0.5 to +8
VGSS
Gate-Source Voltage
ID
Drain/Output Current
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Temperature Range
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500 Ω)
- Continuous
0.5
- Pulsed
V
A
1.5
(Note 1)
0.3
W
-55 to 150
°C
6.0
kV
415
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
FDG6303N Rev.F
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
25
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
V
TJ = 55°C
IGSS
Gate - Body Leakage Current
mV/oC
26
VGS = 8 V, VDS = 0 V
1
µA
10
µA
100
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp.Coefficient
ID = 250 µA, Referenced to 25oC
0.65
-2.6
RDS(ON)
Static Drain-Source On-Resistance
VGS = 4.5 V, ID = 0.5 A
0.34
0.45
0.55
0.77
0.44
0.6
TJ =125°C
VGS = 2.7 V, ID = 0.2 A
ID(ON)
On-State Drain Current
VGS = 2.7 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 0.5 A
0.8
1.5
V
mV/oC
0.5
Ω
A
1.45
S
50
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
28
pF
9
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 5 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 Ω
VDS = 5 V, ID = 0.5 A,
VGS = 4.5 V
3
6
ns
8.5
18
ns
17
30
ns
13
25
ns
1.64
2.3
nC
0.38
nC
0.45
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.25 A
(Note 2)
0.8
0.25
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed
by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDG6303N Rev.F
Typical Electrical Characteristics
2
VGS = 4.5V
2.5V
3.0V
2.7V
2.0V
, NORMALIZED
1.2
0.9
0.6
R DSO
(N)
1.5V
0.3
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
1.5
VGS = 2.0V
1.5
2.5V
2.7V
3.5V
4.5V
1
0.5
0
0
0.5
1
1.5
2
2.5
0
3
0.2
0.4
R DS(on), ON-RESISTANCE (OHM)
I D = 0.5A
VGS = 4.5 V
1.2
1
0.8
1.2
0.6
-50
ID = 0.3A
1.6
1.2
TA = 125°C
0.8
0.4
TA = 25°C
0
-25
0
25
50
75
100
125
1
150
1.5
2
2.5
3
3.5
4
4.5
5
V GS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
1
TJ = -55°C
VDS = 5.0V
0.8
I S , REVERSE DRAIN CURRENT (A)
R DS(ON) , NORMALIZED
1
2
1.6
DRAIN-SOURCE ON-RESISTANCE
0.8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.4
0.6
ID , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
I D, DRAIN CURRENT (A)
3.0V
25°C
125°C
0.6
0.4
0.2
VGS = 0V
TJ = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0
0.5
1
1.5
2
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6303N Rev.F
Typical Electrical Characteristics (continued)
200
I D = 0.5A
VDS = 5V
10V
15V
4
CAPACITANCE (pF)
V GS , GATE-SOURCE VOLTAGE (V)
5
3
2
70
Ciss
30
Coss
10
3
0.1
0
0
0.4
0.8
1.2
1.6
2
0.3
1
2
5
10
25
V DS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
3
50
1m
s
10m
s
IT
IM
)L
N
(O
S
0.5
RD
10
0m
s
1s
0.2
10
s
DC
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 415 °C/W
TA = 25°C
0.05
0.02
0.01
0.1
DS
30
20
10
1
V
SINGLE PULSE
R θJA=415°C/W
TA= 25°C
40
POWER (W)
1
2
5
10
25
0
0.0001
40
0.001
0.01
0.1
1
10
200
SINGLE PULSE TIME (SEC)
, DRAI N-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
ID , DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0V
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
0.02
0.01
R θJA (t) = r(t) * R θJA
R θJA =415 °C/W
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * R θJA (t)
Single Pulse
Duty Cycle, D = t 1/ t 2
0.005
0.002
0.0001
0.001
0.01
0.1
1
10
100
200
t 1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDG6303N Rev.F
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FASTâ
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
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HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrenchâ
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHERâ
OPTOLOGICâ
SMART START
OPTOPLANAR
SPM
Stealth
SuperSOT-3
SuperSOT-6
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SyncFET
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UHC
UltraFETâ
VCX
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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