FDG6306P

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG6306P www.onsemi.com FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –0.6 A, –20 V. RDS(ON) = 420 mΩ @ V GS = –4.5 V RDS(ON) = 630 mΩ @ V GS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • Battery management • Compact industry standard SC70-6 surface mount package • Load switch S G D D G Pin 1 S S 1 or 4 6 or 3 D G 2 or 5 5 or 2 G D 3 or 6 4 or 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ± 12 V ID Drain Current –0.6 A – Continuous (Note 1) – Pulsed –2.0 PD Power Dissipation for Single Operation TJ , TSTG Operating and Storage Junction Temperature Range (Note 1) 0.3 W –55 to +150 °C 415 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7’’ 8mm 3000 units Semiconductor Components Industries, LLC, 2017 Aug, 2017, Rev.1.4 Publication Order Number: FDG6306P W Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BV DSS Min Typ Max ∆BV DSS ∆TJ IDSS Drain–Source Breakdown V GS = 0 V, ID = –250 µA Voltage Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V IGSSF Gate–Body Leakage, Forward V GS = –12 V, V DS = 0 V –100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = 12 V, V DS = 0 V 100 nA –1.5 V On Characteristics –20 Units V –14 mV/°C –1 (Note 2) V GS(th) Gate Threshold Voltage ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = –5 V, ID = –250 µA V DS = V GS , –0.6 3 ID = –250 µA, Referenced to 25°C = –4.5 V, ID = –0.6 A = –2.5 V, ID = –0.5 A = –4.5 V, ID = –0.6 A, TJ =125°C = –4.5 V, V DS = –5 V –1.2 –2 300 470 400 mV/°C 420 630 700 mΩ A ID = –0.6 A 1.8 S V DS = –10 V, V GS = 0 V, f = 1.0 MHz 114 pF 24 pF 9 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –10 V, ID = 1 A, V GS = –4.5 V, RGEN = 6 Ω V DS = –10 V, ID = –0.6 A, V GS = –4.5 V 5.5 11 ns 14 25 ns 6 12 ns 1.7 3.4 ns 1.4 2.0 nC 0.3 nC 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.25 A(Note 2) –0.77 –0.25 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 FDG6306P Electrical Characteristics FDG6306P Typical Characteristics 2.5 -ID , DRAIN CURRENT (A) VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 -3.5V 1.6 -3.0V -2.5V 1.2 0.8 -2.0V 0.4 2.25 2 VGS = -2.5V 1.75 1.5 -3.0V 1.25 -3.5V 0 0.5 1 1.5 2 2.5 0 3 0.5 1 1.5 2 -ID , DRAIN CURRENT (A) -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 1.4 ID = -0.3 A ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.75 0 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 1 0.8 o T A = 125 C 0.6 o T A = 25 C 0.4 0.2 1.5 150 o 2 T J, JUNCTION TEMPERATURE ( C) 2.5 3 3.5 4 4.5 5 -V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 o VD S = -5V TA = -55 C o 25 C -IS, REVERSE DRAIN CURRENT (A) 2 o -I D, DRAIN CURRENT (A) -4.0V 1 125 C 1.5 1 0.5 0 0.5 VGS = 0V 1 o TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 1 1.5 2 2.5 0 3 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDG6306P Typical Characteristics 200 VDS = -5V ID = -0.6A -10V 4 f = 1MHz VGS = 0 V 160 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 1 40 0 0 COSS CRSS 0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 30 100µ s RDS(ON) LIMIT SINGLE PULSE o Rθ JA = 415 C/W 24 o T A = 25 C POWER (W) 1ms 1 10ms 100ms 1s DC VGS = -4.5V SINGLE PULSE o RθJ A = 415 C/W 18 12 6 o TA = 25 C 0.01 0.1 1 10 0 0.0001 100 0.001 0.01 -V DS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -I D, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 10 0.1 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θ JA(t) = r(t) + Rθ JA R θJA = 415 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 0.01 0.01 TJ - TA = P * R θ JA(t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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