FDG6321C-F169

FDG6321C Dual N & P Channel Digital FET Features N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2.7 V. General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using On Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially on low voltage replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. SC70-6 SuperSOTTM-6 SOT-23 G2 D1 SC70-6 P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SO-8 SOT-8 S2 SOIC-14 1 6 2 5 3 4 .21 S1 D2 G1 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Maximum Power Dissipation TA = 25oC unless otherwise noted - Continuous - Pulsed N-Channel P-Channel Units 25 -25 V 8 -8 V 0.5 -0.41 A 1.5 (Note 1) TJ,TSTG Operating and Storage Temperature Ranger ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) -1.2 0.3 W -55 to 150 °C 6 kV 415 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 4 (Note 1) Publication Order Number: FDG6321C/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min N-Ch 25 -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA P-Ch ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID= 250 µA, Referenced to 25 oC N-Ch 26 ID = -250 µA, Referenced to 25 oC P-Ch -22 N-Ch IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate - Body Leakage Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current V mV/oC 1 TJ = 55°C µA 10 P-Ch -1 VGS = 8 V, VDS = 0 V N-Ch 100 nA VGS = -8 V, VDS = 0 V P-Ch -100 nA VDS = VGS, ID = 250 µA N-Ch 0.65 0.8 1.5 V VDS = VGS, ID = -250 µA P-Ch -0.65 -0.82 -1.5 TJ = 55°C µA -10 ON CHARACTERISTICS (Note 2) VGS(th) ∆VGS(th)/∆TJ Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC RDS(ON) Static Drain-Source On-Resistance -2.6 ID = -250 µA, Referenced to 25 C P-Ch VGS = 4.5 V, ID = 0.5 A N-Ch 2. 1 0.34 0.45 0.55 0.72 0.44 0.6 0.85 1.1 1.2 1.8 1.15 1.5 TJ =125°C VGS = 2.7 V, ID = 0.2 A VGS = -4.5 V, ID = -0.41 A P-Ch TJ =125°C VGS = -2.7 V, ID = -0.25 A ID(ON) On-State Drain Current gFS Forward Transconductance mV/ oC N-Ch o N-Ch 0.5 VGS = -4.5 V, VDS = -5 V P-Ch -0.41 VDS = 5 V, ID = 0.5 A N-Ch 1.45 VDS = -5 V, ID = -0.41 A P-Ch 0.9 VGS = 4.5 V, VDS = 5 V Ω A S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel N-Ch 50 VDS = 10 V, VGS = 0 V, P-Ch 62 f = 1.0 MHz N-Ch 28 P-Channel P-Ch 34 VDS = -10 V, VGS = 0V, N-Ch 9 f = 1.0 MHz P-Ch 10 www.onsemi.com 2 pF Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel N-Ch VDD = 5 V, ID = 0.5 A, P-Ch Min Typ Max Units 3 6 nS 7 15 8.5 18 tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 Ω N-Ch P-Ch 8 16 tD(off) Turn - Off Delay Time P-Channel N-Ch 17 30 VDD = -5 V, ID = -0.5 A, P-Ch 55 80 tf Turn - Off Fall Time VGS = -4.5 V, RGEN = 50 Ω N-Ch 13 25 P-Ch 35 60 Qg Total Gate Charge N-Channel N-Ch 1.64 2.3 1.5 Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 5 V, ID = 0.5 A, P-Ch 1.1 VGS = 4.5 V N-Ch 0.38 P- Channel P-Ch 0.31 VDS = -5 V, ID = -0.41 A, N-Ch 0.45 VGS = -4.5 V P-Ch 0.29 nS nS nS nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage N-Ch 0.25 P-Ch VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A (Note 2) (Note 2) A -0.25 N-Ch 0.8 1.2 P-Ch -0.85 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 3 Typical Electrical Characteristics: N-Channel 2 VGS = 4.5V 2.5V 3.0V 2.7V 2.0V R DS(ON) , NORMALIZED 1.2 0.9 0.6 1.5V 0.3 0 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 1.5 VGS = 2.0V 1.5 2.5V 2.7V 3.5V 0.5 1 1.5 2 2.5 4.5V 1 0.5 0 3 0 0.2 R DS(on) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.5A VGS = 4.5 V 1.2 1 0.8 0.6 -50 1 1.2 ID = 0.3A 1.6 1.2 0.4 TA = 25°C 0 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 TA = 125°C 0.8 1 Figure 3. On-Resistance Variation with Temperature. 1.5 I S , REVERSE DRAIN CURRENT (A) T = -55°C VDS = 5.0V J 0.8 25°C 125°C 0.6 0.4 0.2 1 1.5 2 4.5 5 VGS = 0V TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0.5 2 2.5 3 3.5 4 V GS , GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 1 I D , DRAIN CURRENT (A) 0.8 2 1.6 0 0.6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0 0.4 ID , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 1.4 3.0V 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 5. Transfer Characteristics. www.onsemi.com 4 Typical Electrical Characteristics: N-Channel (continued) 200 ID = 0.5A VDS = 5V 10V 15V 4 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 70 Ciss 30 Coss 10 C rss f = 1 MHz VGS = 0V 1 3 0.1 0 0 0.4 0.8 1.2 1.6 2 0.3 1 2 5 Figure 7. Gate Charge Characteristics. 50 IT IM )L ON ( S RD 10m s 10 0.02 s 10 s DC 0.1 VGS = 4.5V SINGLE PULSE Rθ JA = 415 °C/W TA = 25°C 0.01 0.1 DS 30 20 10 1 V SINGLE PULSE R θJA=415°C/W TA = 25°C 40 1s 0.2 0.05 0m s POWER (W) I D , DRAIN CURRENT (A) 1m 0.5 25 Figure 8. Capacitance Characteristics. 3 1 10 V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 2 5 10 25 40 0 0.0001 Figure 9. Maximum Safe Operating Area. 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) , DRAI N-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. www.onsemi.com 5 200 Typical Electrical Characteristics: P-Channel -2.7V -2.5V R DS(ON), NORMALIZED -ID , DRAIN-SOURCE CURRENT (A) VGS =-4.5V -3.0V 0.9 0.6 -2.0V 0.3 -1.5V DRAIN-SOURCE ON-RESISTANCE 2.5 1.2 2 3 -2.7V -3.0V -3.5V -4.5V 1 0.5 1 -2.5V 1.5 0 0 VGS = -2.0V 2 4 0 0.2 0.4 I D = -0.41A R DS(ON),ON-RESISTANCE(OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 1.2 5 1.6 V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 I D = -0.2A 4 3 2 TJ = 125 °C 1 25° C 0 150 1 2 TJ , JUNCTION TEMPERATURE (°C) -I S , REVERSE DRAIN CURRENT (A) TJ = -55°C 25°C 0.8 125°C 0.6 0.4 0.2 1 1.5 2 2.5 4 5 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 1 VDS = -5V 3 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. -ID , DRAIN CURRENT (A) 0.8 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 11. On-Region Characteristics. 0 0.5 0.6 -I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 3 1 VGS = 0V 0.1 TJ = 125°C 25°C 0.01 -55°C 0.001 0.0001 0.2 -VGS , GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 15. Transfer Characteristics. www.onsemi.com 6 Typical Electrical Characteristics: P-Channel (continued) 200 I D = -0.41A VDS = -5V -10V 4 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 80 Ciss 30 Coss 10 3 0.1 0 0 0.4 0.8 1.2 0.3 1.6 Figure 17. Gate Charge Characteristics. ) ON S( RD 10 1m ms IT LIM s 10 25 10 0m s 1s 10 s DC 0.1 VGS = -4.5V SINGLE PULSE RθJA = 415°C A TA = 25°C 0.2 0.5 SINGLE PULSE R θJA=415°C/W TA = 25°C 40 POWER (W) -I D , DRAIN CURRENT (A) 5 50 1 0.01 0.1 2 Figure 18. Capacitance Characteristics. 3 0.05 1 -VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 0.5 Crss f = 1 MHz V GS = 0 V 5 30 20 10 1 2 5 10 25 40 0 0.0001 0.001 0.01 0.1 1 10 200 SINGLE PULSE TIME (SEC) - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 20. Single Pulse Maximum Power Dissipation. Figure 19. Maximum Safe Operating Area. www.onsemi.com 7 Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. 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