FDG6331L

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. tm FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. • –0.8 A, –8 V. RDS(ON) = 260 mΩ @ VGS = –4.5 V RDS(ON) = 330 mΩ @ VGS = –2.5 V RDS(ON) = 450 mΩ @ VGS = –1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) Applications • High performance trench technology for extremely low RDS(ON) • Power management • Load switch • Compact industry standard SC70-6 surface mount package Equivalent Circuit Q2 Vin,R1 4 3 Vout,C1 ON/OFF 5 2 Vout,C1 R1,C1 6 1 R2 IN + V DROP – OUT Q1 Pin 1 SC70-6 See Application Circuit Absolute Maximum Ratings Symbol ON/OFF TA=25oC unless otherwise noted Parameter Ratings Units VIN Gate-Source Voltage (Q2) ±8 V VON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V ILoad Load Current 0.8 A PD TJ, TSTG Maximum Power Dissipation – Continuous (Note 2) – Pulsed (Note 2) (Note 1) Operating and Storage Junction Temperature Range 2.4 0.3 W –55 to +150 °C 415 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA (Note 1a) Package Marking and Ordering Information Device Marking .31 2001 Fairchild Semiconductor Corporation Device Reel Size Tape width Quantity FDG6331L 7’’ 8mm 3000 units FDG6331L Rev B1 1 ( W) FDG6331L November 2014 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVIN Vin Breakdown Voltage VON/OFF = 0 V, ID = –250 µA ILoad Zero Gate Voltage Drain Current VIN = –6.4 V, IFL Leakage Current, Forward VON/OFF = 0 V, VIN = 8 V 100 nA IRL Leakage Current, Reverse VON/OFF = 0 V, VIN = –8 V –100 nA On Characteristics 8 V VON/OFF = 0 V –1 µA (Note 2) VON/OFF (th) Gate Threshold Voltage VIN = VON/OFF, ID = –250 µA RDS(on) Static Drain–Source On–Resistance (Q2) RDS(on) Static Drain–Source On–Resistance (Q1) VIN = 4.5 V, VIN =2.5 V, VIN = 1.8 V, VIN = 4.5 V, VIN = 2.7 V, ID = –0.8 A ID = –0.7 A ID = –0.6 A ID = 0.4A ID = 0.2 A 0.4 0.9 1.5 V 155 193 248 310 380 260 330 450 400 500 mΩ mΩ Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A VSD Drain–Source Diode Forward Voltage –1.2 V VON/OFF = 0 V, IS = –0.25 A(Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6331L Load Switch Application Circuit IN OUT Q2 C1 R1 Q1 LOAD ON/OFF R2 External Component Recommendation: For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030. FDG6331L Rev B1 (W) FDG6331L Electrical Characteristics FDG6331L Typical Characteristics 1 1 VIN = -1.8V VON/OFF = -1.5-8V PW = 300us, D < 2% VIN = -2.5V VON/OFF = -1.5-8V PW = 300us, D < 2% 0.8 TJ = 125OC -VDROP, (V) -VDROP, (V) 0.8 0.6 TJ = 25OC 0.4 0.6 TJ = 125OC 0.4 TJ = 25OC 0.2 0.2 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 0.4 0.8 -IL, (A) Figure 1. Conduction Voltage Drop Variation with Load Current. 1.6 2 2.4 Figure 2. Conduction Voltage Drop Variation with Load Current. 1 0.6 RDS(ON), ON-RESISTANCE (Ω) VIN = -4.5V VON/OFF = -1.5-8V PW = 300us, D < 2% 0.8 -VDROP, (V) 1.2 -IL, (A) 0.6 O TJ = 125 C 0.4 TJ = 25OC 0.2 I L = -1A V ON/OFF = 1.5 - 8V PW = 300us, D < 2% 0.5 0.4 T J = 125 O C 0.3 0.2 T J = 25 O C 0.1 0 0 0.4 0.8 1.2 1.6 2 -IL, (A) Figure 3. Conduction Voltage Drop Variation with Load Current. 2.4 0 1.25 2 2.75 3.5 -V IN, INPUT VOLTAGE (V) 4.25 5 Figure 4. On-Resistance Variation With Input Voltage FDG6331L Rev B1 (W) FDG6331L Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconduc tor’s online packaging area for the most recent package drawings: https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_NSC7 0-006 FDG6331L Rev B1 (W) FDG6331L TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 FDG6331L Rev B1 (W) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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